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MMBT3904 [WEITRON]

General Purpose Transistor NPN Silicon; 通用晶体管NPN硅
MMBT3904
型号： MMBT3904
厂家： WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述：

General Purpose Transistor NPN Silicon
通用晶体管NPN硅

晶体 晶体管 开关 光电二极管
文件： 总7页 (文件大小：142K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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MMBT3904  
COLLECTOR  
3
General Purpose Transistor  
NPN Silicon  
3
1
1
BASE  
2
2
SOT-23  
EMITTER  
Maximum Ratings  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
V
CEO  
V
60  
Vdc  
CBO  
Emitter-Base VOltage  
Collector Current-Continuous  
V
6.0  
200  
Vdc  
mAdc  
EBO  
I
C
Thermal Characteristics  
Characteristics  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR-5 Board  
TA=25 C  
Derate above 25 C  
mW  
225  
1.8  
P
D
mW/ C  
C/W  
R
Thermal Resistance, Junction to Ambient  
JA  
θ
556  
300  
mW  
Total Device Dissipation  
(2)  
Alumina Substrate, TA=25 C  
P
D
Derate above 25 C  
2.4  
mW/ C  
C/W  
R
Thermal Resistance, Junction to Ambient  
Junction and Storage,Temperature  
417  
JA  
θ
T
J,Tstg  
-55 to +150  
C
Device Marking  
MMBT3904=1AM  
(TA=25 C Unless Otherwise noted)  
Electrical Characteristics  
Characteristics  
Symbol  
Unit  
Min  
Max  
Off C haracteristics  
(3)  
-
-
-
Collector-Emitter Breakdown Voltage (I =1.0mAdc.IB=0)  
C
V(BR)CEO  
V(BR)CBO  
40  
60  
Vdc  
Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0)  
Emitter-Base Breakdown Voltage (IE=10 µAdc, IC=0)  
Vdc  
Vdc  
V(BR)EBO  
IBL  
6.0  
-
-
50  
50  
Base Cutoff Current (VCE=30 Vdc,VEB =3.0 Vdc)  
Collector Cutoff Current (VCE=30Vdc,VEB=3.0Vdc)  
nAdc  
nAdc  
ICEX  
1.FR-5=1.0 x 0.75 x 0.062 in.  
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.  
<
<
3.Pulse Test:Pukse Width 300 uS, Duty Cycle 2.0%.  
=
=
WEITRON  
http://www.weitron.com.tw  
MMBT3904  
Electrical Characteristics (T =25 C unless otherwise noted) (Countinued)  
A
Symbol  
Unit  
Max  
Characteristics  
Min  
On Characteristics(3)  
DC Current Gain  
(I = 0.1 mAdc,V =1.0Vdc)  
CE  
C
40  
70  
-
(I = 1.0 mAdc,V = 1.0 Vdc)  
C CE  
-
-
H
FE  
(I = 10 mAdc,V = 1.0Vdc)  
CE  
100  
60  
300  
C
(I = 50 mAdc,V = 1.0Vdc)  
C CE  
-
-
(I = 100 mAdc,V = 1.0Vdc)  
C CE  
30  
(3)  
Collector-Emitter Saturation Voltage  
(I = 10 mAdc, I = 1.0mAdc)  
V
V
0.2  
0.3  
-
-
Vdc  
Vdc  
CE(sat)  
C
B
(I = 50 mAdc, I = 5.0mAdc)  
C
B
(3)  
Base-Emitter Saturation Voltage  
(I = 10 mAdc, I = 1.0 mAdc)  
0.85  
0.95  
0.65  
-
C
B
BE(sat)  
(I = 50 mAdc, I = 5.0 mAdc)  
C
B
Small-signal Characteristics  
Current-Gain-Bandwidth Product (4)  
f
T
-
MHz  
300  
(I = 10 mAdc,V = 20 Vdc, f=100MHz)  
C
CE  
Output Capacitance  
(V = 5.0 Vdc, I =0, f=1.0MHz)  
C
obo  
-
-
4.0  
pF  
pF  
CB  
Input Capacitance  
(V = 0.5 Vdc, I =0, f=1.0MHz)  
E
C
ibo  
8.0  
10  
EB  
Input Impedance  
(V = 10 Vdc, I =1.0 mAdc, f=1.0 kHz)  
C
h
kohms  
1.0  
ie  
CE  
C
Voltage Feeback Radio  
8.0  
-4  
x 10  
h
0.5  
re  
(V = 10Vdc, I =1.0 mAdc, f=1.0 kHz)  
CE  
C
Small-Signal Current Gain  
(V = 10Vdc, I =1.0 mAdc, , f=1.0 kHz)  
h
400  
40  
fe  
100  
-
CE  
C
Output Admittance  
h
oe  
1.0  
-
umhos  
(V = 10Vdc, I =1.0 mAdc, f=-1.0kHz)  
CE  
C
Noise Figure  
5.0  
NF  
dB  
(V = 5.0Vdc, I = 100 µAdc, , R =1.0k ohms, f=1.0kHz)  
CE  
C
S
Switching Characteristics  
Delay Time  
td  
tr  
-
-
-
-
35  
35  
(Vcc= 3.0 Vdc,VBE= -0.5 Vdc  
Ic= 10 mAdc, IB1= 1.0 mAdc)  
ns  
ns  
Rise Time  
Storage Time  
Fall Time  
ts  
tf  
200  
50  
(Vcc= 3.0 Vdc,  
Ic= 10 mAdc, IB1=IB2= 1.0 mAdc)  
<
<
3.Pulse Test:Pluse Width 300 uS, Duty Cycle 2.0%.  
=
=
WEITRON  
http://www.weitron.com.tw  
MMBT3904  
DUTY CYCLE=2%  
+3V  
+3V  
t
10<t <500µs  
1
DUTY CYCLE=2%  
1
+10.9V  
300 ns  
+10.9V  
275  
275  
10k  
10k  
0
-0.5V  
<1ns  
C <4 pF  
S
CS<4 pF  
1N916  
-9.1V  
<1ns  
*Total shunt capacitance of test jig and connectors  
FIG.1 Delay and Rise Time  
Equivalent Test Circuit  
FIG.2 Storage and Fall Time  
Equivalent Test Circuit  
TYPICAL TRANSIENT CHARACTERISTICS  
T =25 C  
J
T =125 C  
J
5000  
10  
V
I
=40V  
CC  
3000  
2000  
/ I =10  
7.0  
C
B
5.0  
1000  
700  
C
C
ibo  
500  
3.0  
2.0  
Q
300  
200  
T
obo  
Q
A
100  
70  
50  
1.0  
0.1  
0.2 0.3 0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30 40  
1.0  
2.0 3.0  
5.0 7.0 10  
20  
30  
50 70 100  
200  
REVERSE BIAS VOLTAGE (VOLTS)  
I
COLLECTOR CURRENT (mA)  
C
FIG.3 Capacitance  
FIG.4 Charge Data  
WEITRON  
http://www.weitron.com.tw  
MMBT3904  
500  
500  
V
I
=40V  
CC  
/ I =10  
300  
200  
I / I =10  
B
C
300  
200  
B
C
100  
70  
100  
70  
50  
t @V =3.0V  
r CC  
50  
30  
20  
30  
20  
40V  
15V  
2.0V  
10  
10  
t @V =0V  
OB  
7
5
d
7
5
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
I
COLLECTOR CURRENT  
I
COLLECTOR CURRENT (mA)  
C
C
FIG.5 Turn-On Time  
FIG.6 Rise Time  
500  
500  
,
t =t -1/8t  
f
I
s
s
V
=40V  
CC  
300  
200  
300  
200  
I
/ I =10  
B
C
I
/ I =20  
=I  
B1 B2  
I
=I  
C
B
B1 B2  
I
/ I =20  
B
C
100  
100  
70  
70  
50  
I
/ I =20  
B
50  
C
I
/ I =10  
B
C
30  
20  
I / I =10  
C B  
30  
20  
10  
10  
7
7
5
5
1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50 70 100  
200  
1.0  
2.0 3.0 5.0 7.0 10  
20  
30  
50 70 100  
200  
I
COLLECTOR CURRENT (mA)  
C
I
COLLECTOR CURRENT (mA)  
C
FIG.7 Storage Time  
FIG.8 Fall Time  
TYPICALAUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS  
(V =5.0 Vdc.T =25 C, Bandwidth=1.0Hz)  
A
CE  
12  
10  
8
14  
SOURCE RESISTANCE=200 Ω  
f =1.0kHz  
I =1.0mA  
I =1.0 mA  
C
C
12  
I =0.5mA  
C
10  
8
SOURCE RESISTANCE=200 Ω  
I =0.5 mA  
I =50 µA  
C
C
SOURCE RESISTANCE=1.0k  
6
4
I =100 uA  
I =50uA  
C
6
C
4
2
0
2
0
SOURCE RESISTANCE=500½  
I =100µA  
C
0.1  
0.2  
0.4  
1.0  
2.0  
4.0  
10  
20  
40  
100  
0.1 0.2 0.4  
1.0 2.0  
4.0  
10  
20  
40  
100  
R
SOURSE RESISTANCE (kOHMS)  
f FREQUENCY (kHz)  
S
FIG.9  
FIG.10  
WEITRON  
http://www.weitron.com.tw  
MMBT3904  
(NPN)  
(V =10 Vdc,m f=1.0 kHz, T =25 C)  
A
h PARAMETERS  
CE  
300  
200  
100  
50  
20  
10  
5
100  
70  
50  
30  
2
1
0.1  
0.2  
0.3  
0.5  
1.0  
2.0  
3.0  
5.0  
10  
0.1  
0.2  
0.3  
0.5  
1.0  
2.0  
3.0  
5.0  
10  
IC COLLECTOR CURRENT (mA)  
I
COLLECTOR CURRENT (mA)  
C
FIG.11 Current Gain  
FIG.12 Output Admittance  
20  
10  
10  
7.0  
5.0  
3.0  
2.0  
5.0  
2.0  
1.0  
1.0  
0.5  
0.2  
0.7  
0.5  
0.1  
0.2 0.3  
0.5  
1.0  
2.0  
3.0  
5.0  
10  
0.1  
0.2  
0.3  
0.5  
1.0  
2.0  
3.0  
5.0  
10  
I COLLECTOR CURRENT (mA)  
C
I
COLLECTOR CURRENT (mA)  
C
FIG.14 Voltage Feedback Radio  
FIG.13 Input Impedance  
TYPICAL STATIC CHARACTERISTICS  
2.0  
1.0  
T =+125 C  
J
V
=1.0V  
CE  
+25 C  
-55 C  
0.7  
0.5  
0.3  
0.2  
0.1  
0.1  
0.2  
0.3  
0.5 0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
20  
30  
50  
70 100  
200  
I
COLLECTOR CURRENT (mA)  
C
FIG.15 DC Current Gain  
WEITRON  
http://www.weitron.com.tw  
MMBT3904  
1.0  
T =25 C  
J
30mA  
Ic=1.0mA  
0.8  
0.6  
0.4  
100mA  
10mA  
0.2  
0
0.01  
0.02  
0.03  
0.05  
0.07  
0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
I
BASE CURRENT (mA)  
B
FIG.16 Collector Saturation Ragion  
1.0  
1.2  
T =25 C  
J
V )@I /I =10  
BE(sat C B  
0.5  
1.0  
0.8  
+25 C to +125 C  
-55 C to +25 C  
q
FOR V  
VC  
CE(sat)  
0
V @V =1.0V  
BE(sat) CE  
-0.5  
0.6  
0.4  
-55 C to +25 C  
-1.0  
-1.5  
-2.0  
V
@I /I =10  
CE(sat) C B  
+25 C to +125 C  
q
FOR V  
BE(sat)  
VB  
0.2  
0
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
100  
20  
60  
140  
180 200  
160  
40  
80  
120  
0
I
COLLECTOR CURRENT (mA)  
C
I
COLLECTOR CURRENT (mA)  
C
FIG.18 Temperature Coefficients  
FIG.17 "ON" Voltage  
WEITRON  
http://www.weitron.com.tw  
MMBT3904  
SOT-23 Package Outline Dimensions  
Unit:mm  
A
Dim  
A
B
C
D
Min Max  
0.35 0.51  
1.19 1.40  
2.10 3.00  
0.85 1.05  
0.46 1.00  
1.70 2.10  
2.70 3.10  
0.01 0.13  
0.89 1.10  
0.30 0.61  
0.076 0.25  
B
TOP VIE W  
C
E
G
H
J
K
L
D
G
H
E
K
M
L
J
M
WEITRON  
http://www.weitron.com.tw  

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