MMBZ10VA [WEITRON]
SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS; 小信号齐纳二极管300米沃茨3-26伏型号: | MMBZ10VA |
厂家: | WEITRON TECHNOLOGY |
描述: | SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS |
文件: | 总5页 (文件大小:144K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBZ5V6A Series
Dual Common Anode Zener TVS
SMALL SIGNAL
ZENER DIODES
300m WATTS
Features:
3-26 VOLTS
*Allows Either Two Separate Unidirectional Configuations or a Single
Bidirectional Configuations.
*Low Leakage Current.
*24-40 Watts Peak Power Protection.
*Excellent Clamping Capability.
*ESD Rating of Class N(exceeding 16KV)per the Human Body Model.
*Transient Voltage Suppressors Encapsulated in a SOT-23 Package.
3
1
2
Mechanical Data:
*Case: Molded Epoxy
*Marking: Marking Code
SOT-23
*Maximum Case Temperature for Soldering Purpose: 260 C for 10 sec.
*Weight: 0.008grams(approx.)
SOT-23 Outline Dimensions
Unit:mm
A
Dim
A
B
C
D
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
B
C
TOP VIEW
E
D
G
G
H
J
K
L
E
H
K
J
L
M
M
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MMBZ5V6A Series
Maximum Ratings (T =25 C Unless otherwise Noted)
A
Characteristics
Symbol
Value
(1)
<
_
P
Peak Power Dissipation @ 1.0 ms @ TL 25 C
MMBZ5V6A thru MMBZ10VA
MMBZ12VA thru MMBZ33VA
PK
W
24
40
Total Power Dissipation on FR-5 Board (2)@ TA =25 C
Derate above 25 C
mW
mW/ C
C/W
225
1.8
P
D
Thermal Resistance Junction-to-Ambient
R
θJA
556
300
2.4
Total Power Dissipation on Alumina Substrate(3)@ TA =25 C
Derate above 25 C
mW
mW/ C
P
D
R
C/W
θJA
Thermal Resistance Junction-to-Ambient
417
T ,T
-55 to +150
260
C
Junction and Storage Temperature Range
J
STG
T
Lead Solder Temperature-Maximum(10 Second Duration)
C
L
A
NOTE: 1. Non-Repetitive Current Pulse, per FIG 5 and Derated above T =25 C per FIG 6.
2. FR-5=1.0 0.75 0.62 in.
3. Alumina=0.4 0.3 0.024m, 99.5% alumina
Electrical Characteristics
(TA =25 C unless otherwise noted)
I
(Circuit tied to Pins 1 and 3 or 2 and 3)
UNIDIRECTIONAL
I
F
Symbol
IPP
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
VC
V
V
V
B R R WM
C
V
I
I
V
VRWM
IR
R
T
F
Working Peak Reverse Votlage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
V
BR
θ
IT
Test Current
I
P P
VBR
IF
Maximum Temperature Coef ficient of VBR
Forward Current
Uni-Directional TVS
VF
Forward Voltage @ IF
ZZT
IZK
ZZK
Maximum Zener Impedance @ IZT
Reverse Current
Maximum Zener Impedance @ IZK
Device Marking
Marking
Eqivalent Circuit diagram
Item
XX=Specific Device Code
(See Table on Page 3)
1
2
MMBZ5V6A
Series
3
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MMBZ5V6A Series
C unless otherwise noted)
ELECTRICALCHARACTERISTICS (T = 25
A
UNIDIRECTIONAL(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V = 0.9 V Max @ I = 10 mA)
24 WATTS
F
F
Max Zener
Impedance(5)
VC @ I
P P
(6)
Breakdown Voltage
Z
@ IZT
ZT
@
VRWM
IR
(4)
VBR (V)
@ IT
mA
ZZK @ IZK
mA
1600 0.25
VC
V
IPP
A
VRWM
Volts
V
BR
θ
Device
Marking
mV/ C
uA
Min
Nom
Max
Ω
Ω
Device
MMBZ5V6A
MMBZ6V2A
MMBZ6V8A
MMBZ9V1A
5A6
6A2
6A8
9A1
10A
3.0
3.0
4.5
6.0
6.5
5.0
0.5
0.5
0.3
0.3
5.32
5.89
6.46
8.65
9.50
5.6
6.2
6.8
9.1
10
5.88
6.51
7.14
9.56
10.5
20
1.0
1.0
1.0
1.0
11
8.0
8.7
9.6
14
3.0
2.76
2.5
1.26
2.80
3.4
-
-
-
-
-
-
-
-
-
-
-
-
1.7
7.5
MMBZ10V
A
14.2
1.7
7.5
(V = 0.9 V Max @ I = 10 mA)
40 WATTS
F
F
(6)
Breakdown Voltage
VC @ IPP
I
@
IR
(4)
VBR (V)
@ IT
mA
VC
IPP
A
VRWM
VRWM
Volts
V
BR
θ
Device
Marking
mV/ C
nA
Min
Nom
Max
V
Device
MMBZ12VA
MMBZ15VA
MMBZ18VA
MMBZ20VA
MMBZ27VA
MMBZ33VA
12A
15A
18A
20A
27A
33A
8.5
12
200
50
50
50
50
50
11.40
14.25
17.10
19.00
25.65
31.35
12
15
18
20
27
33
12.60
15.75
18.90
21.00
28.35
34.65
1.0
1.0
1.0
1.0
1.0
1.0
17
21
25
28
40
46
2.35
1.9
7.5
12.3
15.3
17.2
24.3
30.4
14.5
17
1.6
1.4
22
1.0
26
0.87
4.
5.
V
Z
measured at pulse test current I at an ambient temperature of 25 C .
T
B R
ZT
and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
Z(AC )
ZK
= 0.1 I
, with the AC frequency = 1.0 kHz.
Z(DC )
6. S urge current waveform per Fig 5 and derate per Fig 6
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MMBZ5V6A Series
WE ITR ON
18
15
12
9
1000
100
10
1
6
3
0
0.1
0.01
0
+50
+100
+150
-40
+25
+85
+125
-40
TEMPERATURE( C)
TEMPERATURE( C)
FIG.1 Typical Breakdown Voltage
Versus Temperature
FIG.2 Typical Leakage Current
Versus Temperature
(Upper curve for each voltage is bidirectional mode,)
lower curve is undirectional mode)
320
280
240
200
160
120
80
300
250
200
ALUMINA SUBSTRATE
5.6 V
150
100
50
15 V
FR-5 BOARD
40
0
0
0
2
3
0
25
50
75
100
125
150
175
1
BIAS(V)
TEMPERATURE( C)
FIG.3 Typical Capacitance Versus Bias Voltage
FIG.4 Steady State Power Derating Curve
(Upper curve for each voltage is bidirectional mode,)
lower curve is undirectional mode)
100
90
80
70
60
50
40
30
20
10
0
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
_
<
t
10us
r
50% OF IPP
.
100
PEAK VALUE - IPP
PP
I
HALF VALUE =
2
50
0
tP
0
1
2
3
0
25
50
75 100 125
150 175 200
4
Ta , AMBIENT TEMPERATURE( C)
t, TIME(ms)
FIG.5 Pulse Waveform
FIG.6 Pulse Derating Curve
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MMBZ5V6A Series
WE ITR ON
100
100
RECTANGULAR
R E C TANGULAR
WAVEFORM, TA = 25 C
A
WAVEFORM, T = 25 C
BIDIRECTIONAL
BIDIRECTIONAL
10
10
UNIDIRECTIONAL
UNIDIRECTIONAL
1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
PW, PULSE WIDTH(ms)
PW, PULSE WIDTH(ms)
FIG.7 Maximum Non-repetitive Surge
Power, PPKVersus PW
FIG.8 Maximum Non-repetitive Surge
Power, PPK(NOM)Versus PW
Power is defined as VZ (NOM)xIZ(pk)where VZ (NOM) is
the nominal Zener voltage measured at the low test current
used for voltage classification
Power is defined as VRSM x IZ(pk)where VRSM is
the clamping voltage at IZ(pk).
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