MXTA42A-G [WEITRON]
Transistor;
| 型号： | MXTA42A-G |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MXTA42
NPN Plastic-Encapsulate Transistor
SOT-89
* “G” Lead(Pb)-Free
1
2
1. BASE
3
2. COLLECTOR
3. EMITTER
( T =25 C unless otherwise noted)
A
M aximum R atings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Value
Unit
V
CEO
300
300
5.0
Vdc
Vdc
Vdc
V
CBO
V
EBO
mAdc
Collector Current-Continuous
I
500
C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
P
D
500
4.0
mW
mW/ C
(Note 1.)T =25 C
A
Derate above 25 C
(1)
R
250
C/W
Thermal Resistance, Junction to Ambient
θJA
T
-55 to +150
Junction and Storage,Temperature Range
J,Tstg
C
Device Marking
MXTA42=A42
Characteristics
Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I =0)
Symbol
Min
Max
Unit
-
V
V
300
300
Vdc
Vdc
Vdc
C
B
(BR)CEO
-
-
Collector-Base Breakdown Voltage (I = 100 µAdc, I =0)
C
E
(BR)CBO
V
5.0
Emitter-Base Breakdown Voltage (I = 100 µAdc, I =0)
(BR)EBO
E
C
-
-
Collector Cutoff Current (V = 200 Vdc, I =0)
I
uAdc
uAdc
CB
0.25
0.1
E
CBO
I
Emitter Cutoff Current (V = 5.0 Vdc, I =0)
EB
EBO
C
1.FR-5=1.0 x 0.75 x 0.062 in.
WEITR O N
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MXTA42
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted) (Countinued)
A
Max
Characteristics
Symbol
Min
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 1 mAdc,V
-
-
(1)
(2)
(3)
h
h
h
60
80
75
FE
FE
FE
)
C
CE=10 Vdc
250
-
(I = 10 mAdc,V
(I =30 mAdc,V
)
)
C
CE=10 Vdc
C
CE=10 Vdc
Collector-Emitter Saturation Voltage
V
-
-
0.2
0.9
Vdc
Vdc
CE(sat)
BE(sat)
(I = 20 mAdc, I = 2 mAdc)
C
B
Base-Emitter Saturation Voltage
(I = 20 mAdc, I = 2 mAdc)
V
C
B
Transition Frequency
(V =20 Vdc, I =10 mAdc, f=30MHz)
f
50
-
MHz
T
CE
C
Classification of h
FE(2)
Rank
A
B1
B2
150-200
C
80-100
100-150
200-250
Range
WEITRON
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MXTA42
WE ITR ON
Typical Characteristics
120
100
80
Tj=+125 C
25 C
60
40
-55 C
20
0
0.1
1.0
10
100
I
, COLLECTOR CURRENT (mA)
C
FIG. 1 DC Current Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VCE(sat)@25 C, ICIB = 10
VCE(sat)@125 C, ICIB =10
VCE(sat)@ -55 C, ICIB=10
VBE(sat)@25 C, ICIB = 10
VBE(sat)@125 C, ICIB =10
VBE(sat)@ -55 C, ICIB =10
VBE(on)@25 C, VCE = 10V
VBE(on)@125 C, VCE = 10V
VBE(on)@-55 C, VCE = 10V
00
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
FIG.2 "On"Voltages
80
70
60
50
40
30
20
10
T =25 C
j
VEC=20V
f=20MHz
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
I , COLLECTOR CURRENT (mA)
C
FIG.3 Current-Gain-Bandwidth
WEITRON
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WE ITR ON
MXTA42
SOT-89 Outline Dimensions
unit:mm
SOT-89
Min
Dim
A
B
C
D
Max
E
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
A
G
H
J
C
E
G
H
J
D
B
K
K
L
1.500TYP
L
3.100
2.900
WEITRON
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