US1J [WEITRON]
Surface Mount Ultra Fast Rectifiers; 表面贴装超快整流器
| 型号： | US1J |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Ultra Fast Rectifiers |
| 文件： | 总3页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US1A Thru US1M
Surface Mount Ultra Fast Rectifiers
REVERSE VOLTAGE
50 TO 1000 VOLTS
FORWARD CURRENT
1.0 AMPERE
Features:
* For Surface Mount Application
* Glass Passivated Chip
* Low Reverse Leakage Current
* Low Forward Voltage Drop And High Current Capability
* Ultra Fast Switching For High Efficiency
* Plastic Meterial Has UL Flammability Classification 94V-0
Mechanical Data
* Case : Molded Plastic
SMA(DO-214AC)
* Terminals: Solder Plated Terminal-Solderable per MIL-STD-202, Method 208
* Polarity :Indicated by cathode band
* Weight : 0.002 Ounce ,0.064 grams
Unit:mm
SMA Outline Dimension
SMA
B
Dim
Min
2.20
4.00
1.27
0.15
4.48
0.10
0.76
1.70
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
B
C
D
E
G
H
J
A
J
C
D
G
H
E
WEITRON
http://www.weitron.com.tw
US1A Thru US1M
Maximum Ratings and Electrical Characteristics
Rating 25 C Ambient Temperature Unless Otherwise Specified.
Single Phase Half Wave, 60Hz , Resistive or Inductive Load.
For Capacitive Load, Derate Current by 20%.
US1A US1B US1D US1G US1J US1K US1M
Symbol
Unit
Characteristics
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
600
420
600
1000
700
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
800
560
800
V
Maximum DC Blocking Voltage
Maximum Average Forward
1000
100
A
A
V
IF(AV)
1.0
Rectified Current @T =75 C
T
Peak Forward Surge Current,
30
8.3 ms Single Half Sine-Wave
IFSM
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous At 1.0A DC
VF
IR
1.0
1.70
1.30
Maximum DC Reverse Current @T =25 C
A
5.0
100
50
uA
At Rated DC Blocking Voltage @T =100 C
A
nS
Maximun Reverse Recocery Time(Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
100
10
Trr
P
F
C
J
20
75
R
J T
C/W
C
-55 to+150
-55 to+150
T
J
Storage Temperature Range
TSTG
C
I
I
IRR
NOTES:1.Reverse Recovery Test Conditions: F=0.5A, R=1.0A, =0.25A.
2.Measured at 1.0MHz applied reverse voltage of 4.0V DC.
3.Unit Mounted on PC board with 5.0 mm2(0.03mm thick) land areas.
WEITRON
http://www.weitron.com.tw
US1A thru US1M
10
1.0
1.0
US 1A - US 1D
US 1G
US 1J - US 1M
0.5
0.1
0
0.01
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2.0
TT, TE R MINAL TE MP E R ATUR E (°C )
FIG .1 Forward C urrent Deratin C urve
VF, INS TANTANE OUS FOR WAR D VOLTAG E (V)
FIG .2 Tpical Forward C haracteristics
40
30
1000
S ingle Half S ine-Wave
(J E DE C Method)
100
Tj = 100°C
10
20
10
0
1.0
Tj = 25°C
0.1
Tj = 150°C
0.01
0
20
40
60
80
100 120 140
1
10
100
NUMBE R OF C YC LE S AT 60Hz
FIG . 3 Forward S urge C urrent Derating C urve
P E R C E NT OF R ATE D P E AK R E VE R S E VOLTAG E (%)
FIG..4 Typical R everse C haracteristics
trr
+0.5A
Device
Under
Test
(-)
(+)
(-)
0A
P ulse
G enerator
(Note 2)
50V DC
Approx
-0.25A
(+)
Oscilloscope
(Note 1)
-1.0A
S et time base for 50/100 ns/cm
FIG..5 R everse R ecovery Time C haracteristic and Test C ircuit
WEITRON
http://www.weitron.com.tw
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