WAN222 [WEITRON]

Surface Mount Switching Diode; 表面贴装开关二极管
WAN222
型号: WAN222
厂家: WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述:

Surface Mount Switching Diode
表面贴装开关二极管

二极管 开关
文件: 总3页 (文件大小:216K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
WAN222  
WEITRON  
Surface Mount Switching Diode  
SWITCHING DIODE  
100m AMPERRES  
80 VOLTS  
Features:  
*Extremely High Switching Speedff  
*Low Reverse Leakage Current  
*Small Outline Surface Mount SC-89 Package  
*High Reliability  
SC-89  
(SOT-523F)  
Applications:  
Ultra High Speed Switching  
SC-89 Outline Demensions  
Unit:mm  
A
SC-89  
Dim  
A
B
C
D
Min  
1.50  
0.75  
0.60  
0.23  
Nom  
1.60  
0.85  
0.70  
0.28  
Max  
1.70  
0.95  
0.80  
0.33  
3
B
S
TOP VIE W  
2
1
K
G
G
J
K
M
N
0.50BSC  
0.15  
0.40  
---  
D
0.20  
0.50  
10  
10  
1.70  
0.10  
0.30  
---  
---  
1.50  
N
M
---  
1.60  
J
S
C
WEITRON  
http://www.weitron.com.tw  
1/3  
10-Jul-09  
WAN222  
Maximum Ratings (EACH DIODE)  
Symbol  
Value  
Unit  
Characteristic  
Non-Repetitive Reverse Voltage  
Volts  
V
V
80  
RM  
DC Reverse Voltage  
Forward Current  
Volts  
80  
R
F
I
mAdc  
100  
mAdc  
Adc  
I
Peak Forward Surge Current  
Non-Repetitive Peak Forward  
300  
4
FM  
I
FSM  
Surge Current  
@t=1us  
Thermal Characteristics  
Max  
Symbol  
Unit  
mW  
Characteristic  
Total Device Dissipation FR-5  
*1  
PD  
Board ,TA=25 C  
150  
1.2  
Derate Above 25 C  
mW/ C  
C/W  
C
R
Thermal Resistance Junction to Ambient  
833  
JA  
Junction and Storage Temperature  
T ,T  
J stg  
-55 to + 150  
*1 ER-5=1.0x0.75x0.062 in  
Electrical Characteristics (TA=25 C Unless Otherwise Note) (Each Diode)  
Symbol  
Characteristic  
Min  
Max  
Unit  
Reverse Breakdown Voltage  
-
V
80  
Vdc  
BR  
uAdc)  
(I =100  
R
Reverse Voltage Leakage Current  
I
-
-
-
-
0.1  
R
uAdc  
(V =70V)  
R
Diode Capacition  
3.5  
1.2  
C
D
PF  
(V =6Vdc, f=1.0MHz)  
R
Forward Voltage  
V
Vdc  
F
(I =100 mAdc)  
F
Reverse Recovery Time (Figure 1.)  
4.0  
nS  
t
rr  
(I =5.0 mAdc,V =6.0 Vdc)  
R
R
Device Marking  
Item  
Eqivalent Circuit diagram  
Marking  
1
2
3
N9  
WAN222  
WEITRON  
http://www.weitron.com.tw  
2/3  
10-Jul-09  
WAN222  
t
r
t
p
t
rr  
I
F
t
t
10%  
R
I
= 0.1 I  
R
L
rr  
A
90%  
I
V
R
= 5.0 mA  
= 6 V  
= 100 W  
F
R
L
V
R
t
= 2ms  
p
t = 0.35 ns  
r
INPUT PULSE  
OUTPUT PULSE  
RECOVERY TIME EQUIVALENT TEST CIRCUIT  
FIG.1 Reverse Recovery Time Test Circuit for the DAN222  
10  
100  
10  
T
= 150 C  
= 125 C  
A
T
A
= 85 C  
T
A
1.0  
T
A
= - 40 C  
T
A
= 85 C  
0.1  
0.01  
T
A
= 55 C  
1.0  
T
A
= 25 C  
T
A
= 25 C  
0.001  
0.1  
0.2  
50  
0.4  
0.6  
0.8  
1.0  
1.2  
0
10  
20  
30  
40  
V , FORWARD VOLTAGE (VOLTS)  
F
V , REVERSE VOLTAGE (VOLTS)  
R
FIG.2 Forward Voltage  
FIG.3 Reverse Current  
1.0  
0.9  
0.8  
0.7  
0.6  
0
2
4
6
8
V , REVERSE VOL TAGE (VOLTS)  
R
FIG.4 Diode Capacitance  
WEITRON  
http://www.weitron.com.tw  
3/3  
10-Jul-09  

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