WOST03C [WEITRON]
Surface Mount TVS Diode Array for ESD Protection; 表面贴装TVS二极管阵列的ESD保护
| 型号： | WOST03C |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount TVS Diode Array for ESD Protection |
| 文件： | 总3页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WOST03C thru
WOST36C
Surface Mount TVS Diode Array
for ESD Protection
TRANSIENT
VOLTAGE
SUPPRESSORS
300 WATTS
P b
Lead(Pb)-Free
3-36 VOLTS
Features:
* Transient Protection for data lines as per IEC 61000-4-2(ESD)15KV(air),
8KV(contact)
* 300 Watts Peak Power Protection. (tp=8/20µS)
* Protects Two Unidirectional Lines with pin3 used as a common anode
Connection or One Bidirectional Line between pin1 & pin2
* Low Leakage Current
3
2
1
* Excellent Clamping Capability
* Transient Voltage Suppressors Encapsulated in a SC-59 Package
SC-59
Mechanical Data:
* Case : Molded Epoxy
* Marking : Marking Code
* Weight : 0.008 grams(approx)
SC-59 Outline Dimension
A
L
SC-59
Dim Min
Max
A
B
C
D
G
H
J
2.70
1.30
1.00
0.35
1.70
0.00
0.10
0.20
1.25
2.25
3.10
1.70
1.30
0.50
2.30
0.10
0.26
0.60
1.65
3.00
3
S
B
Top View
2
1
D
G
K
L
S
J
C
All Dimension in mm
K
H
WEITRON
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1/3
Rev.A 19-Dec-05
WOST03C thru
WOST36C
Maximum Ratings(TA=25˚C Unless Otherwise Noted)
Characteristic
Symbol
PPK
Votle
300
Unit
W
Peak Pulse Power Dissipation (tP = 8/20μs)
Thermal Resistance, Junction to Ambient
Lead Soldering Temperature
RθJA
TL
556
°C/W
°C
260(10s)
-55 to +125
-55 to +150
°C
Operating Temperature Range
TJ
Tstg
Storage Temperature Range
°C
Electrical Characteristics(T =25˚C Unless Otherwise Noted)
A
Max
Max
Max
Capacitance
@∂V,IMHZ
Breakdown
Voltage
Reverse
Stand off
Voltage
Clamping
Voltage
@1A
Clamping
Reverse
Leakage
@VRWM
Marking
Code
Part
Number
Voltage
@5A
VBR@1mA
PIN 1-3 or PIN 2-3
I
VRWM(V)
MIN(V)
Vc(V)
Vc(V)
(uA)
(PF)
R
WOST03C
WOST05C
WOST12C
WOST15C
WOST24C
WOST36C
M03
M05
M12
M15
M24
M36
3.3
5.0
4-5
7.0
9.8
8.5
11
24
30
55
75
100
12
700
420
150
100
60
6.1-7.4
12.0
15.0
24.0
36.0
13.3-16.3
16.7-20.4
26.7-32.6
40.0-47.0
19.0
24.0
43.0
60.0
0.5
0.5
0.5
0.5
60
NOTE:1. Suffix"C" denotes Bi-directional device.
Eqivalent Circuit Diagram:
Bidirectional
Configuration
WEITRON
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Rev.A 19-Dec-05
2/3
WOST03C thru
WOST36C
10
110
100
90
80
70
60
50
40
30
20
10
0
1
0.1
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
o
Ambient Temperature - TA ( C)
Pulse Duration - tp (us)
FIG.2 Power Derating Curve
FIG.1 Non-Repetitive Peak Pulse Power vs. Pulse Time
110
Wave form
Paramete rs:
tr = 8 µs
100
90
80
70
60
50
40
30
20
10
0
td = 20 µs
-t
e
td=IPP/2
0
5
10
15
20
25
30
Time (us)
FIG.3 Pulse Waveform
WEITRON
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3/3
Rev.A 19-Dec-05
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