WSD520S [WEITRON]
Surface Mount Schottky Barrier Diodes; 表面贴装肖特基势垒二极管
| 型号： | WSD520S |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Schottky Barrier Diodes |
| 文件： | 总4页 (文件大小：510K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WSD520S/521S
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
200m AMPERES
30 VOLTS
P b
Lead(Pb)-Free
Feature:
*Extrmely High Switching Speed.
*Low Forward Voltage and Low Reverse Current.
*High Reliability.
*Schottky Barrier Diodes Encapsulated in a SOD-523 Package
1
2
Description:
These schottky barrier diodes are designed for high speed
switching applications circuit protection, and voltage clamping,
SOD-523
Extremely low forward voltage reduces conduction loss,
Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
SOD-523 Outline Dimensions
Unit:mm
S OD-523
Dim
A
B
C
D
E
Min
1.10
0.70
0.50
0.25
0.15
0.07
1.50
Max
1.30
0.90
0.70
0.35
0.25
0.20
1.70
J
K
P IN 1. C ATHODE
2. ANODE
WEITRON
http://www.weitron.com.tw
1/4
Rev.A 21-Jul-05
WSD520S/521S
Maximum Ratings (T =25 C Unless otherwise noted)
a
Value
30
Symbol
Characteristic
Unit
Volts
mA
V
R
Reverse Voltage
Average Rectifier
Forward Current
200
I
F(AV)
Peak Forward Surge Current (1)
1.0
125
A
I
FSM
Operating Junction
Temperature Range
T
J
C
C
T
stg
Storage Temperature Range
-40 to +125
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Max
Characteristic
Unit
Symbol
Min
Reverse Breakdown Voltage (I =100µA)
R
30
V
Volts
Volts
(BR)R
Forward Voltage
I =200mA
F
WSD520S
WSD521S
0.60
0.50
V
F
Reverse Leakage
1.0
30.0
I
R
µAdc
WSD520S
WSD521S
V =10V
R
1. 60HZ for 1
NOTE:
Device Marking
Item
Marking
B , 5J
Eqivalent Circuit diagram
WSD520S
2
1
WSD521S
C , 5M
WEITRON
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2/4
Rev.A 21-Jul-05
WSD520S/521S
Electrical characteristic curves (Ta=25 C)
WSD520S
1
100m
10m
1m
100
80
60
40
20
0
C
C
5
2
C
5
1
7
5
C
a
2
T
5
2
100
10
1
0
25
50
75
100
125
0
0.1
0.2
0.3
0.4
0.5
0.6 0.7
(V)
AMBIE NT TE MP E R ATUR E : Ta (ûC )
FOR WAR D VOLTAG E : V
F
Fig 1. Derating curve
(mounting on glass epoxy P C Bs)
Fig. 2 Forward characteristics
WSD520S
WSD520S
Ta=125 C
75 C
1m
100
10
1
f=1MHz
100
10
1
25 C
25 C
100n
10n
1n
0
10
20
30
0
10
20
30
R E VE R S E VOLTAG E : V
R
(V)
R E VE R S E VOLTAG E : V
R
(V)
Fig. 3 R everse characteristics
Fig. 4 C apacitance between
terminals characteristics
WEITRON
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3/4
Rev.A 21-Jul-05
WSD520S/521S
WSD521S
WSD521S
1
100m
10m
1m
1m
Ta=125 C
75 C
100
10
1
C
C
5
2
C
5
1
7
5
C
a
2
T
5
25 C
25 C
2
100
100n
10
1
10n
1n
0
0.1
0.2
0.3
0.4
0.5
0.6 0.7
(V)
0
10
20
30
FOR WAR D VOLTAG E : V
F
R E VE R S E VOLTAG E : V
R
(V)
Fig. 5 Forward characteristics
Fig. 6 R everse characteristics
WSD521S
100
f=1MHz
10
1
0
10
20
30
R E VE R S E VOLTAG E : V
R
(V)
Fig. 7 C apacitance between
terminals characteristics
WEITRON
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4/4
Rev.A 21-Jul-05
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