WT-3402 [WEITRON]
Surface Mount N-Channel Enhancement Mode MOSFET; 表面贴装N沟道增强型MOSFET
| 型号： | WT-3402 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount N-Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WT-3402
Surface Mount N-Channel
Enhancement Mode MOSFET
DRAIN
3
DRAIN CURRENT
4.6 AMPERES
1
DRAIN SOURCE VOLTAGE
30 VOLTAGE
Features:
GATE
*Super high dense cell design for low RDS(ON)
2
SOURCE
R
R
<30 m @V =10V
GS
Ω
DS(ON)
DS(ON)
<42 m @V =4.5V
Ω
GS
3
*Rugged and Reliable
*SOT-23 Package
1
2
SOT-23
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Drain-Source Voltage
Gate-Source Voltage
Symbol
Value
30
Unite
V
DS
V
GS
V
V
A
+
20
-
(1)
(1)
Continuous Drain Current (T =125 C)
J
I
D
4.6
(2)
16
Pulsed Drain Current
I
A
A
DM
I
Drain-Source Diode Forward Current
S
1.25
1.25
100
(1)
Power Dissipation
P
W
D
Maximax Junction-to-Ambient
R
C/W
θ
JA
Operating Junction and Storage
Temperature Range
T ,Tstg
J
-55 to 150
C
Device Marking
WT3402=T02
WEITRON
http://www.weitron.com.tw
WT-3402
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
=0V, I =250 uA
V
(BR)DSS
-
1.5
-
-
V
V
30
1
V
D
GS
Gate-Source Threshold Voltage
=V , I =250 uA
V
GS (th)
2.5
V
D
DS GS
Gate-Source Leakage Current
I
+
-
-
GSS
100
nA
uA
+
=0V,V = 20V
-
GS
V
DS
Zero Gate Voltage Drain Current
=24V,V =0V
I
-
-
DSS
1
V
DS
GS
rDS (on)
Drain-Source On-Resistance
mΩ
-
-
V
=10V, I =4.6A
30
42
26
38
GS
GS
D
V
=4.5V, I =4.0A
D
On-State Drain Current
=5V,V =4.5A
I
D(on)
-
-
-
10
-
A
S
V
DS
GS
Forward Transconductance
g
fs
5
V
=5V, I =4.6A
DS
D
(3)
Dynamic
Input Capacitance
C
-
-
-
iss
-
-
782
135
93
V
=15V,V =0V, f=1MHZ
DS
GS
Output Capacitance
=15V,V =0V, f=1MHZ
C
oss
F
P
V
DS
GS
Reverse Transfer Capacitance
C
rss
-
V
=15V,V =0V, f=1MHZ
DS
GS
(3)
Switching
Turn-On Delay Time
t
-
-
-
-
-
-
nS
nS
d(on)
4.8
3.9
Ω
= 10V,V =15V, I =1A, R =15 ,R =6Ω
L
DD D
V
GS
GEN
Rise Time
= 10V,V =15V, I =1A, R =15 ,R =6Ω
t
r
Ω
V
GS
GEN
L
DD
D
Turn-Off Delay Time
= 10V,V =15V, I =1A, R =15 ,R =6Ω
t
nS
nS
27.7
5.5
d(off)
-
-
Ω
V
GS
GEN
L
DD
D
Fall Time
= 10V,V =15V, I =1A, R =15 ,R =6Ω
t
f
Ω
V
GS
GEN
L
DD
D
Total Gate Charge
=15V, I =4.6A,V =10V
-
-
-
-
nc
nc
nc
Qg
15.8
2
V
GS
DS
D
Gate-Source Charge
=15V, I =4.6A,V =10V
Qgs
-
-
V
GS
DS
D
Gate-Drain Charge
=15V, I =4.6A,V =10V
3
Qgd
V
GS
DS
D
Diode Forward Voltage
Drain-Source
-
0.78
1.2
VSD
V
V
=0V, I =1.25A
GS
S
<
Note:
_
1. Surface Mounted on FR4 Board t 10sec.
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
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WT-3402
WE ITR ON
25
20
15
10
20
VGS=4V
VGS=10,9,8,7,6,5V
16
12
25 C
8
4
0
Tj =125 C
VGS=3V
-55 C
5
0
0.0 0.5
1
1.5
2
2.5
3
2
4
6
8
10
12
0
V
GS
, GATE-TO-SOURCE VOLTAGE(V)
V
, DRAIN-TO-SOURCE VOLTAGE(V)
DS
FIG.2 Transfer Characteristics
FIG.1. Output Characteristics
2.2
1.8
VGS=10V
ID=4.6A
1250
1000
750
500
250
0
1.4
1.0
Ciss
0.6
0.2
0
Coss
Crss
0
5
10
15
20
25
30
-50 -25
0
25 50 75 100 125
T ( C)
j
V
DS
, DRAIN-TO-SOURCE VOLTAGE(V)
FIG.4 On-Resistance Variation with
Temperature
FIG.3 Capacitance
1.3
1.2
VDS=VGS
ID =250uA
1.3
ID =250uA
1.2
1.1
1.1
1.0
0.9
1.0
0.9
0.8
0.7
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50 75 100 125
T ,JUNCTION TEMPERATURE( C)
j
T ,JUNCTION TEMPERATURE( C)
j
FIG.5 Gate Threshold Variation
with Temperature
FIG.6 Breakdown Voltage Variation
with Temperature
WEITRON
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WT-3402
WE ITR ON
24
20
16
12
20
10
8
4
VDS=5V
20
TJ =25 C
1
0.4
0
0.6
0.8
1.0
1.2
1.4
0
5
10
15
25
I
,DRAIN-SOURCE CURRENT(A)
V
SD
,BODY DIODE FORWARD VOLTAGE(V)
DS
FIG.7 Transconductance Variation
with Drain Current
FIG.8 Body Diode Forward Voltage
Variation with Source Current
50
10
t
i
VDS=15V
ID =4.6A
m
i
L
)
8
10
N
1
O
0
m
(
R DS
s
1
0
0
m
s
6
4
2
0
11
1
s
D
C
VGS=10V
Single Pulse
TC=25 C
0.1
0.03
0.1
1
10 20 50
0
2
4
6
8
10 12 14 16
V
DS
,DRAIN-SOURCE CURRENT(V)
Q ,TOTAL GATE CHARGE(nC)
g
FIG.10 Maximum Safe Operating Area
FIG.9 Gate Charge
V
DD
on
t
t
off
d(off)
t
r
t
d(on)
t
f
t
R
L
V
IN
90%
10%
90%
D
OUT
V
OUT
V
V
10%
INVE R TE D
VG S
R
G E N
G
90%
50%
50%
IN
S
10%
P ULS E WIDTH
FIG.11 Switching Test Circuit
FIG.12 Switching Waveforms
WEITRON
http://www.weitron.com.tw
WT-3402
WE ITR ON
10
1
0.5
0.2
DM
P
0.1
1
t
0.1
2
t
0.05
0.02
1. R jA (t)=r (t) * R j
θ A
θ
2. R j =See Datasheet
A
θ
3. Tj
M-TA = PDM* R j (t)
A
θ
Single Pulse
0.01
1
4. Duty Cycle, D=t /t
2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
SQUARE WAVE PULSE DURATION(SEC)
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
WEITRON
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WT-3402
SOT-23 Package Outline Dimensions
Unit:mm
A
Dim
A
B
C
D
Min Max
0.35 0.51
1.19 1.40
2.10 3.00
0.85 1.05
0.46 1.00
1.70 2.10
2.70 3.10
0.01 0.13
0.89 1.10
0.30 0.61
0.076 0.25
B
TOP VIE W
C
E
G
H
J
K
L
D
G
H
E
K
M
L
J
M
WEITRON
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相关型号：
WT-525225-20K2-A1-G
Wire Diameter: Ï0.08mm x 105 ( Type2 Wire) Coil Turns: 20TS ( 10Ts / 1 layer, Total 2 layers)
TDK
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