WT6401 [WEITRON]
P-Channel Enhancement Mode Power MOSFET; P沟道增强型功率MOSFET
| 型号： | WT6401 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总6页 (文件大小：1810K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WT6401
P-Channel Enhancement
Mode Power MOSFET
DRAIN CURRENT
-4.3 AMPERS
DRAIN
3
DRAIN SOUCE VOLTAGE
-12 VOLTAGE
1
GATE
2
SOURCE
Features:
*Super High Dense Cell Design For Low RDS(ON)
RDS(ON)<50mΩ@VGS=10V
*Rugged and Reliable
3
1
*Simple Drive Requirement
*Fast Switching
*1.8V Gate Rated
2
*SOT-23 Package
SOT-23
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
Maximum Ratings(TA=25�C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
VDS
VGS
-12
V
±8
,VGS@10V(TA
,VGS@10V(TA
-4.3
ID
A
-3.4
Pulsed Drain Current1
-12
1.38
IDM
PD
Total Power Dissipation(TA=25 )
℃
W
℃/W
℃
Maximum Junction-ambient3
90
RɵJA
Operating Junction and Storage Temperature Range
-55~+150
TJ, Tstg
Device Marking
WT6401=6401
1/6
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WEITRON
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WT6401
Electrical Characteristics(TA = 25℃ Unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
-12
-
-
-
-
-
-
-
BVDSS
VGS(Th)
IGSS
VGS=0,ID=-250μA
V
Gate-Source Threshold Voltage
VDS=VGS,ID=-250μA
-1.0
±100
-1
Gate-Source Leakage Current
-
nA
μA
VGS= ±8V
Drain-Source Leakage Current(Tj=25℃)
VDS=-16V,VGS =0
-
IDSS
Drain-Source Leakage Current(Tj=70℃)
VDS=-12V,VGS =0
-
-25
Drain-Source On-Resistance2
VGS=-4.5V,ID=-4.3A
RDS(on)
mΩ
-
-
-
-
-
-
50
85
125
VGS=-2.5V,ID=-2.5A
VGS=-1.8V,ID=-2.0A
Forward Transconductance
VDS=-5.0,ID=-4.0A
-
12
-
S
gfs
Dynamic
Input Capacitance
-
-
-
985
180
160
1580
Ciss
Coss
Crss
VGS=0V,VDS=-15V,f=1.0MHz
Output Capacitance
pF
-
-
VGS=0V,VDS=-15V,f=1.0MHz
Reverse Transfer Capacitance
VGS=0V,VDS=-15V,f=1.0MHz
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WT6401
Switching
Turn-on Delay Time2
-
-
-
-
-
-
-
6
5
-
-
td(on)
VDS=-10V,VGS=-10V,ID=-1A,RD=10Ω,RG=3.3Ω
Rise Time
t
r
VDS=-10V,VGS=-10V,ID=-1A,RD=10Ω,RG=3.3Ω
ns
Turn-off Delay Time
16
3
-
td (off)
VDS=-10V,VGS=-10V,ID=-1A,RD=10Ω,RG=3.3Ω
Fall Time
-
t
f
VDS=-10V,VGS=-10V,ID=-1A,RD=10Ω,RG=3.3Ω
Total Gate Charge2
15
24
-
Qg
Qgs
Qgd
VDS=-12V,VGS=-4.5V,ID=-4.0A
Gate-Source Charge
nC
1.3
4
VDS=-12V,VGS=-4.5V,ID=-4.0A
Gate-Source Change
-
VDS=-12V,VGS=-4.5V,ID=-4.0A
Source-Drain Diode Characteristics
Forward On Voltage2
VGS=0V,IS=-1.2A
-
-
-
-
1.2
-
V
VSD
Reverse Recovery Time2
25
26
ns
nC
T
rr
VGS=0V,IS=-4.0A,dl/dt=100A/μs
Reverse Recovery Charge
-
Q
rr
VGS=0V,IS=-4.0A,dl/dt=100A/μs
Note: 1. Pulse width limited by max, junction temperature.
≦
≦
2. pulse width 300μs, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.
3/6
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WT6401
14
12
16
-5.0V
-4.5V
-3.0V
°
=150 C
T
-5.0V
-4.5V
-3.0V
-2.5V
A
°
14
12
10
8
T
A
=25 C
10
8
-2.5V
VG=-1.8V
VG=-1.8V
6
4
6
4
2
0
2
0
0
2
4
6
8
0
1
2
3
4
5
6
VDS ,Drain-to-source Voltage(V)
-VDS ,DRAIN-TO-SOURCE VOLTAGE(V)
Fig.2 Typical Output Characteristics
FIG.1 Typical Output Characteristics
70
60
1.6
1.4
ID = -3A
TA = 25°C
ID = -4A
VG = -4.5V
1.2
1.0
50
40
0.8
0.6
-50
0
50
100
150
1
3
5
7
9
VGS ,Gate-to-source Voltage(V)
Tj ,Junction Temperature(°C)
Fig.3 On-Resistance v.s. Gate Voltage
Fig.4 Normalized OnResistance
3
2
2.0
1.5
1.0
Tj = 150°C
Tj = 25°C
1
0
0.5
0.0
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
-VDS ,Source-to-Drain Voltage(V)
Tj ,Junction Temperature(°C)
Fig.5 Forward Characteristics of
Reverse Diode
Fig.6 Gate Threshold Voltage v.s.
Junction Temperature
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WT6401
f = 1.0MHz
1000
8
I D = 4A
VDS = 16V
6
4
100
Ciss
2
0
Coss
Crss
0
1
5
9
13
17
0
8
16
24
32
VDS, Drain-to-Source Voltage(V)
QG , Total Gate Charge(nC)
Fig 8. Typical Capacitance Characteristics
Fig 7. Gate Charge Characteristics
1
100,000
10,00
Duty factor = 0.5
0.2
0.1
0.1
0.05
1ms
1,000
PDM
t
0.01
10ms
T
0.01
Duty factor = t / T
Peak Tj=PDM x Rθju + Tu
Rθja=270°C / W
100ms
0.100
0.01
TA = 25°C
Single Pulse
Is
DC
Single pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
-VDS , Drain-to-Source Voltage(V)
t, Pulse Width(s)
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operation Area
VG
VDS
90%
QG
-4.5V
QGD
QGS
10%
VGS
td(on) tr
td(off) tf
Q
Charge
Fig.12 Gate Charge Waveform
Fig 11. Switching Time Circuit
5/6
06-May-05
WEITRON
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WT6401
SOT-23 Outline Dimension
SOT-23
A
Dim
A
B
C
D
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
B
C
TOP VIEW
E
D
G
G
H
J
K
L
E
H
K
L
M
J
M
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06-May-05
WEITRON
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