WT7822AM [WEITRON]
Surface Mount N-Channel Enhancement Mode MOSFET; 表面贴装N沟道增强型MOSFET
| 型号： | WT7822AM |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount N-Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WT7822AM
Surface Mount N-Channel
Enhancement Mode MOSFET
DRAIN CURRENT
14 AMPERES
P b
Lead(Pb)-Free
DRAIN SOURCE VOLTAGE
25 VOLTAGE
Features:
*Super high dense cell design for low RDS(ON)
R
R
<7 mΩ@V =10V
DS(ON)
DS(ON)
GS
<9 mΩ@V =4.5V
GS
*Rugged and Reliable
*SO-8 Package
1
SO-8
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Drain-Source Voltage Rating
Drain-Source Voltage
Symbol
Value
Unite
4
30
25
V
V
V
V
Spike
DS
V
V
A
+
16
-
Gate-Source Voltage
GS
(1)
(1)
Continuous Drain Current (T =125 C)
J
I
D
14
(2)
56
Pulsed Drain Current
I
A
A
DM
I
Drain-Source Diode Forward Current
S
14
2.5
50
(1)
Power Dissipation
P
W
D
(1)
Maximax Junction-to-Ambient
R
C/W
θJA
Operating Junction and Storage
Temperature Range
T ,Tstg
J
-55 to 150
C
Device Marking
WT7822AM=STM7822A
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WT7822AM
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
(2)
Static
Drain-Source Breakdown Voltage
=0V, I =250µA
V
(BR)DSS
-
1.2
-
-
V
V
25
V
D
GS
Gate-Source Threshold Voltage
=V , I =250µA
V
0.7
2.0
GS (th)
V
D
DS GS
Gate-Source Leakage Current
+
-
I
-
-
GSS
100
nA
uA
+
=0V,V = 16V
-
GS
V
DS
Zero Gate Voltage Drain Current
=20V,V =0V
I
-
DSS
1
V
DS
GS
Drain-Source On-Resistance
rDS (on)
-
-
6
8
7
9
V
GS
V
GS
=10V, I =14A
mΩ
D
=4.5V, I =10A
D
On-State Drain Current
=10V,V =10V
I
D(on)
-
-
-
10
-
A
S
V
DS
GS
Forward Transconductance
g
fs
28
V
=10V, I =14A
DS
D
(3)
Dynamic
Input Capacitance
C
-
iss
-
-
3640
550
V
=16V,V =0V, f=1MHZ
DS
GS
Output Capacitance
=16V,V =0V, f=1MHZ
C
-
oss
F
P
V
DS
GS
Reverse Transfer Capacitance
C
rss
-
420
-
V
=16V,V =0V, f=1MHZ
DS
GS
(3)
Switching
Turn-On Delay Time
t
-
-
-
-
-
-
nS
nS
d(on)
12.3
10.2
V
=5V,V =16V, I =14A, R =6Ω
GS
DD
D
GEN
Rise Time
V
t
r
=5V,V =16V, I =14A, R =6Ω
GS
DD
D
GEN
Turn-Off Time
V
t
nS
nS
23.8
12.1
d(off)
-
-
=5V,V =16V, I =14A, R =6Ω
GS
DD
D
GEN
Fall Time
V
t
f
=5V,V =16V, I =14A, R =6Ω
GS
DD
D
GEN
Total Gate Charge
VGS=10V,VDS=16V,ID=14A
VGS=5V,VDS=16V,ID=14A
-
-
73.9
36.2
-
nc
Qg
-
Gate-Source Charge
Qgs
-
11.2
9.9
nc
nc
-
-
V
=5V, V =16V, I =14A
GS
DS D
Gate-Drain Charge
=5V, V =16V, I =14A
Qgd
-
V
GS
DS
D
Diode Forward Voltage
=0V, I =14A
Drain-Source
-
0.84
1.2
VSD
V
V
GS
S
<
Note:
_
1. Surface Mounted on FR4 Board t 10sec.
<
<
_
_
2. Pulse Test : PW 300us, Duty Cycle 2%.
3. Guaranteed by Design, not Subject to Production Testing.
4. Guaranteed when external Rg=6Ω and tf < tf max.
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WT7822AM
WE ITR ON
20
25
20
15
10
VGS=2.5V
25 C
VGS=3V
16
VGS=4.5V
-55 C
Tj=125 C
VGS=10V
12
8
4
0
VGS=2V
2.5
5
0
0
0.5
1
1.5
2
3
0.0
0.6
1.2
1.8
2.4
3.0
3.6
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig.2 Transfer Characteristics
Fig.1 Output Characteristics
2.2
VGS=10V
6000
ID=14A
1.8
4800
3600
2400
1.4
1.0
Ciss
0.6
0.2
0
1200
0
Coss
Crss
-50 -25
0
25
50
100 125
75
0
4
8
12
16
20
24
Tj, Junction Temperature ( C)
VDS, Drain-to Source Voltage (V)
Fig.3 Capacitance
Fig.4 On-Resistance Variation with Temperature
1.6
1.4
1.15
VDS=VGS
ID=250uA
ID=250uA
1.10
1.2
1.0
0.8
1.05
1.00
0.95
0.90
0.85
0.6
0.4
0.2
-50 -25
0
25 50 75 100 125
-50 -25
0
25 50 75 100 125
Tj, Junction Temperature (˚C)
Tj, Junction Temperature (˚C)
Fig.6 Breakdown Voltage Variation
with Temperature
Fig.5 Gate Threshold Variation
with Temperature
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WT7822AM
WE ITR ON
42
20
10
35
28
21
14
1
0
7
0
TJ=25 C
VDS=10V
20 25
IDS, Drain-Source Current (A)
0.5
0.6
0.7
0.8
0.9
1.0
0
5
10
15
V
SD, Body Diode Forward Voltage (V)
Fig.7 Transconductance Variation
with Drain Current
Fig.8 Body Diode Forward Voltage
Variation with Source Current
5
60
VDS=16V
10ms
4
ID=14A
10
(ON) Limit
DS
100ms
R
3
2
1s
1
DC
1
0
VGS=10V
0.1
Single Pulse
Tc=25 C
0.03
0
6
12 18
24 30 36 42 48
0.1
1
10 20
50
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Fig.10 Maximum Safe Operating Area
Fig.9 Gate Charge
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
RL
f
t
5
VIN
90%
90%
D
OUT
V
OUT
V
V
VGS
10%
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
10%
PULSE WIDTH
FIG.11 Switching Test Circuit
FIG.12 Switching Waveforms
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WT7822AM
WE ITR ON
10
1
Duty Cycle=0.5
0.2
DM
P
0.1
0.1
1
t
0.05
2
t
1. R j
A
(t)=r (t) * R j
θ
θ A
0.02
2. R j =See Datasheet
A
θ
3. TjM-TA = PDM* R j (t)
A
θ
4. Duty Cycle, D=t /t
Single Pulse
0.001
1
2
0.01
0.0001
0.01
0.1
1
10
100
SQUARE WAVE PULSE DURATION(SEC)
FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE
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WT7822AM
SO-8 Package Outline Dimensions
Unit:mm
1
θ
L
E1
7(4X)
D
(4X)
7
B
e
eB
MILLIMETERS
SYMBOLS
MIN
1.35
0.10
0.35
0.18
4.69
3.56
5.70
MAX
1.75
0.20
0.45
0.23
4.98
4.06
6.30
A
A1
B
C
D
E1
eB
e
1.27 BSC
0.60
0
0.80
8
L
θ
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