WTA8921 [WEITRON]

PNP Silicon Transistors; PNP硅晶体管


型号：	WTA8921
厂家：	WEITRON TECHNOLOGY
描述：	PNP Silicon Transistors PNP硅晶体管晶体晶体管
文件：	总4页 (文件大小：604K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

WTA8921

COLLECTOR

PNP Silicon Transistors

* “G” Lead(Pb)-Free

BASE

SOT-23

EMITTER

(Ta=25 C)

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

Value

Unit

Vdc

CEO

-30

-35

CBO

Emitter-Base Voltage

Collector Current -Continuous

-5.0

-800

Vdc

mAdc

EBO

THERMAL CHARACTERISTICS

Characteristics

Total Device Dissipation FR-5 Board

Symbol

Value

Unit

(1)

200

T =25 C

mW/ C

C/W

Derate above 25 C

Thermal Resistance, Junction Ambient

1.6

625

θJA

-55 to +150

Junction and Storage, Temperature

Tstg

Device Marking

WTA8921=IO, IY

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = -10 mAdc, I =0)

-30

Vdc

(BR)CEO

-35

Vdc

Collector-Base Breakdown Voltage (I = -1 uAdc, I =0)

(BR)CBO

-5.0

Emitter-Base Breakdown Voltage (I = -1 uAdc, I =0)

(BR)EBO

uAdc

-1.0

Collector Cutoff Current (V = -30Vdc, I =0)

CBO

Emitter Cutoff Current (V = -5.0 V c, I =0)

EBO

1. FR-5=1.0 0.75 0.062 in

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WTA8921

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

Typ

Unit

Max

ON CHARACTERISTICS

DC Current Gain

(1)

100

320

(I = -100 mAdc, V = -1 Vdc)

(2)

(I = -800 mAdc, V = -1 Vdc)

Collector-Emitter Saturation Voltage

(I = -500 mAdc, I = -20mAdc)

Vdc

-0.4

CE(sat)

Cob

Output Capacitance

2.0

(V =-10Vdc, I =0, f=1MHZ)

Transition Frequency

(I = -10mAdc, V =-5 Vdc, f=30MHz)

MHz

(1)

CLASSIFICATION OF h

Rank

Range

160-320

100-200

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WTA8921

FIG.2

FIG.1

FIG.4

FIG.3

FIG.5

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WTA8921

SOT-23 Package Outline Dimensions

Unit:mm

Dim

Min Max

0.35 0.51

1.19 1.40

2.10 3.00

0.85 1.05

0.46 1.00

1.70 2.10

2.70 3.10

0.01 0.13

0.89 1.10

0.30 0.61

0.076 0.25

TOP VIEW

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