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WTD882GR-G [WEITRON]

Transistor;
WTD882GR-G
型号： WTD882GR-G
厂家： WEITRON TECHNOLOGY    WEITRON TECHNOLOGY
描述：

Transistor
文件： 总5页 (文件大小：248K)
中文：  中文翻译
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WTD772  
WTD882  
PNP/NPN Epitaxial Planar Transistors  
TO-252/D-PAK  
* “G” Lead(Pb)-Free  
1. BASE  
2. COLLECTOR  
3. EMITTER  
3
2
1
ABSOLUTE MAXIMUM RATINGS  
(Ta=25 C)  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base VOltage  
Collector Current (DC)  
Symbol  
PNP/WTD772  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
NPN/WTD882  
V
30  
40  
5.0  
3.0  
-30  
-40  
-5.0  
-3.0  
CEO  
V
V
CBO  
EBO  
I
C(DC)  
Collector Current (Pulse)(1)  
(Pulse)  
-7.0  
-0.6  
Adc  
Adc  
I
C
7.0  
0.6  
I
(Pulse)  
Base Current  
B
P
Total Device Dissipation Tc=25 C  
Junction Temperature  
W
C
D
10  
150  
T
j
Storage, Temperature  
Tstg  
C
-55 to +150  
Device Marking  
WTD772=B772 , WTD882=D882  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min  
Max  
Unit  
-
Collector-Emitter Breakdown Voltage (I = -10/10 mAdc, I =0)  
V
-30/30  
Vdc  
C
B
(BR)CEO  
-
-
-40/40  
Vdc  
Collector-Base Breakdown Voltage (I = -100/100 µAdc, I =0)  
V
V
C
E
(BR)CBO  
Vdc  
-5.0/5.0  
Emitter-Base Breakdown Voltage (I = -100/100 µAdc, I =0)  
(BR)EBO  
E
C
uAdc  
I
I
CE0  
-1.0/1.0  
-1.0/1.0  
Collector Cutoff Current (V = -30/30 Vdc, I =0)  
-
-
CE  
B
uAdc  
Collector Cutoff Current (V = -40/40 Vdc, I =0)  
CB  
CBO  
EBO  
E
-
I
-1.0/1.0 uAdc  
d
Emitter Cutoff Current (V = -6.0/6.0V c, I =0)  
EB  
C
NOTE: 1.PW 350us, duty cycle 2%  
WEITRON  
http://www.weitron.com.tw  
WTD772  
WTD882  
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted) (Countinued)  
A
Max  
Characteristics  
Symbol  
Min  
TYP  
Unit  
ON CHARACTERISTICS  
DC Current Gain  
(I = -1.0/1.0 Adc,V  
C
h
-
-
400  
-
(1)  
FE  
60  
-
-
)
CE=-2.0/2.0Vdc  
DC Current Gain  
(I = -100/100 mAdc,V = -2.0/2.0 Vdc)  
C
h
32  
-
(2)  
FE  
CE  
Collector-Emitter Saturation Voltage  
(I = -2.0/2.0 Adc, I = -0.2/0.2mAdc)  
-
V
-0.5/0.5  
Vdc  
Vdc  
CE(sat)  
BE(sat)  
C
B
Base-Emitter Saturation Voltage  
(I = -2.0/2.0 Adc, I = -0.2/0.2mAdc)  
-
-
-
-2.0/2.0  
V
C
B
Current-Gain-Bandwidth Product  
(I = -0.1/0.1 mAdc,V =-5.0/5.0 Vdc, f=10MHz)  
80/90  
f
-
MHz  
T
C
CE  
Classification of h  
FE(1)  
R
Y
Rank  
O
GR  
200-400  
Range  
100-200  
160-320  
60-120  
WEITRON  
http://www.weitron.com.tw  
WTD772  
WTD882  
F1. Total Power Dissipation VS.  
Ambient Temperature  
F.2 Derating Curve for All Types  
NOTE  
1. Aluminum heat sink  
of 1.0 mm thickness.  
2. With no insulator film.  
3. With silicon compound.  
10  
100  
S
/
b
8
6
80  
60  
l
i
m
D
i
i
i
t
e
n
s
f
i
d
s
n
i
t
i
p
e
h
a
e
a
t
t
i
s
o
i
n
1
k
n
40  
20  
0
0
0
4
2
c
l
2
m
i
m
2
5
2
c
m
i
t
9
e
2
c
m
d
Without heat sink  
0
50  
100  
0
50  
100  
150  
150  
°
Ta-Amient Temperature- C  
Tc,Case Temperature(°C)  
F3. Thermal Resistance VS.  
Pulse Width  
F4. Safe Operating Areas  
<
PW 10 ms  
−
−
<
10  
(
Duty Cycle 50 %  
)
P
W
Ic(max),Pulse  
V
CE=10V  
0
1
=
1
0
.
1
1
m
m
I =1.0A  
0
m
C
Duty=0.001  
S
°
S
0
Ic(max),DC  
D
S
u
30  
10  
3
1
s
i
s
s
m
i
i
p
L
(
a
d
i
S
t
i
n
i
o
n
t
g
e
l
e
n
o
n
s
v
r
/
e
b
p
L
e
i
t
m
i
t
i
3
1
i
t
e
0.3  
0.1  
e
d
p
u
l
s
e
)
NOTE  
1. Tc=25 C  
2. Curves must be derated  
linearly with increase of  
temperature and Duty Cycle.  
0.03  
0.01  
0.3  
0.1  
1
3
6
10  
30  
60 100  
0.3  
1
3
10  
30  
100 300 1000  
V
-Collector to Emitter Voltage-V  
CE  
PW-Pulse Width-ms  
WTD772  
F5. Collector Current VS. Collector  
To Emitter Voltage  
WTD882  
F6. Collector Current VS. Collector  
To Emitter Voltage  
-2.0  
-1.6  
-1.2  
Pulse Test  
2.0  
Pulse Test  
IB=-10mA  
IB=-9mA  
IB=10mA  
IB=9mA  
1.6  
1.2  
IB=-8MA  
IB=-7mA  
IB=8MA  
IB=7mA  
IB=-6mA  
IB=-5mA  
IB=6mA  
IB=5mA  
-0.8  
-0.4  
0
IB=-4mA  
0.8  
0.4  
0
IB=4mA  
IB=-3mA  
IB=-2mA  
IB=-1mA  
IB=3mA  
IB=2mA  
IB=1mA  
0
-4  
-8  
-12  
-16  
-20  
0
4
8
12  
16  
20  
vCE  
-Collector-Emitter Voltage(V)  
vCE  
-Collector-Emitter Voltage(V)  
WEITRON  
http://www.weitron.com.tw  
WTD772  
WTD882  
F8.  
-I  
,
c
VCE(sat), VBE(sat)  
,
FE  
F7. h  
VBE-I  
c
10  
6
1000  
600  
VCE=2.0V  
Puse Test  
3
WTD772  
WTD882  
WTD772  
V
BE(sat)  
300  
1
0.6  
h
FE  
2
8
8
D
T
W
100  
60  
0.3  
0.1  
30  
0.06  
0.03  
WTD772  
WTD882  
10  
6
VBE  
0.01  
0.006  
0.003  
2
8
8
D
T
W
3
1
0.001 0.003 0.01 0.03  
0.001  
0.003 0.01 0.03 0.1  
0.3  
1
3
10  
0.1 0.3  
1
3
10  
Ic-Collector Current(A)  
Ic-Collector Current(A)  
Cob-VCB  
,
F10.  
Cib-VCE  
F9. fT - I  
c
1000  
f=1.0MHz  
IE =0(Cob)  
IC=0(Cib)  
V
=5.0V  
CE  
Forecd air  
Cooling  
(with heat sink)  
300  
W
T
D
300  
100  
8
8
2
Cib  
W
T
D
7
100  
60  
WTD882  
7
2
W
T
D
7
7
2
WTD772  
Cob  
30  
W
T
D
8
8
2
30  
10  
10  
6
3
3
1
1
3
6
10  
30  
60  
0.01  
0.03  
0.1  
0.3  
1
VCB-Collector to Base Voltage(V)  
VEB-Emitter to Base Voltage(V)  
Ic-Collector Current(A)  
WEITRON  
http://www.weitron.com.tw  
WTD772  
WTD882  
TO-252 Outline Dimensions  
unit:mm  
E
TO-252  
G
A
Min  
6.40  
9.00  
0.50  
-
Max  
6.80  
10.00  
0.80  
2.30  
2.50  
0.55  
1.60  
5.80  
0.64  
1.70  
1.50  
Dim  
A
B
C
D
H
4
J
B
1
2
3
2.20  
0.45  
1.00  
5.40  
0.30  
0.70  
0.90  
E
G
H
J
K
L
M
K
D
C
L
M
WEITRON  
http://www.weitron.com.tw  

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