2SK3541M3T5 [WILLAS]
SOT-723 Plastic-Encapsulate MOSFETS; SOT- 723塑封装的MOSFET
| 型号： | 2SK3541M3T5 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | SOT-723 Plastic-Encapsulate MOSFETS |
| 文件： | 总4页 (文件大小：463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
2SK3541M3T5
SOT-723 Plastic-Encapsulate MOSFETS
N-Channel MOSFET
FEATURES
SOT-723
z
z
z
z
z
Low on-resistance
Fast switching speed
Low voltage drive makes this device ideal for portable equipment
Drive circuits can be simple
1. GATE
2. SOURCE
3. DRAIN
Parallel use is easy
APPLICATIONS
Interfacing , Switching
MARKING:KN
KN
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
*A protection diode is included between the gate and the source terminals to protect the diode against static electricity
when the product is in use. Use a protection circuit when the fixed voltages are exceeded.
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
30
Units
Drain-source voltage
Gate-source voltage
VDS
VGS
ID
V
±20
±100
Continuous drain current
Power dissipation
mA
W
PD
0.15
Thermal resistance from junction to ambient
Junction temperature
RθJA
TJ
833
℃/W
150
℃
Storage temperature
Tstg
-55 ~+150
* Pw≤10µs ,Duty cycle≤1%
2012-09
WILLAS ELECTRONIC CORP.
WILLAS
2SK3541M3T5
SOT-723 Plastic-Encapsulate MOSFETS
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Zero gate voltage drain current
Gate threshold voltage
Symbol
V(BR) DSS
IGSS
Test Condition
VGS = 0V, ID =10µA
Min
Typ
Max
Unit
V
30
±1
1.0
1.5
8
VDS =0V, VGS =±20V
VDS =30V, VGS =0V
VDS =3V, ID =100µA
VGS =4V, ID =10mA
VGS =2.5V, ID =1mA
VDS =3V, ID =10mA
µA
µA
V
IDSS
VGS(th)
0.8
20
5
7
Static drain-source on-state resistance
RDS(on)
Ω
13
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
gFS
Ciss
Coss
Crss
td(on)
tr
mS
13
9
VDS =5V,VGS =0V,f =1MHz
pF
4
15
35
80
80
VGS=5V,VDD=5V, ID =10mA
ns
RL=500ꢀ,RG=10ꢀ
Turn-off delay time
Fall time
td(off)
tf
2012-09
WILLAS ELECTRONIC CORP.
WILLAS
2SK3541M3T5
SOT-723 Plastic-Encapsulate MOSFETS
Typical Characteristics
Output Characteristics
Transfer Characteristics
0.20
0.15
0.10
0.05
0.00
200
4.0V
3.5V
VGS=3.0V
Ta=25℃
100
Pulsed
30
10
VGS=2.5V
3
1
VGS=2.0V
VGS=1.5V
VDS=3V
Ta=25℃
Pulsed
0.3
0.1
0
1
2
3
4
5
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE VDS (V)
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON)
ID
RDS(ON)
——
VGS
——
60
40
20
0
15
10
5
Ta=25℃
Ta=25℃
Pulsed
Pulsed
ID=100mA
VGS=2.5V
ID=50mA
VGS=4V
0
3
1
10
30
100
0
5
10
15
20
200
DRAIN CURRENT ID (mA)
GATE TO SOURCE VOLTAGE VGS (V)
IS ——
VSD
200
100
VGS=0V
Ta=25℃
Pulsed
30
10
3
1
0.3
0.1
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
2012-09
WILLAS ELECTRONIC CORP.
WILLAS
2SK3541M3T5
SOT-723 Plastic-Encapsulate MOSFETS
Outline Drawing
SOT-723
.049(1.25)
.045(1.15)
.007(0.17)
.003(0.07)
.003(0.8)
.011(0.27)
.006(0.15)
Dimensions in inches and (millimeters)
Rev.C
2012-09
WILLAS ELECTRONIC CORP.
相关型号：
©2020 ICPDF网 联系我们和版权申明