BCW68GLT1 [WILLAS]
General Purpose Transistors; 通用晶体管型号: | BCW68GLT1 |
厂家: | WILLAS ELECTRONIC CORP |
描述: | General Purpose Transistors |
文件: | 总3页 (文件大小:297K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
WILLAS
BCW68GLT1
GeneralPurposeTransistors
PNP Silicon
RoHS product for packing code suffix "G",
•
Halogen free product for packing code suffix "H"
.
•
Weight : 0.008g
ORDERING INFORMATION
Device
Marking
Shipping
3000/Tape&Reel
BCW68GLT1
DG
MAXIMUM RATINGS
Rating
SOT–23
Symbol
V CEO
V CBO
V EBO
I C
Value
– 45
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
3
COLLECTOR
– 60
Vdc
– 5.0
– 800
Vdc
1
BASE
Collector Current — Continuous
mAdc
2
THERMAL CHARACTERISTICS
Characteristic
EMITTER
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
556
300
2.4
mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
°C/W
°C
TJ , Tstg
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 )
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 )
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)
Collector Cutoff Current
V (BR)CEO
V (BR)CES
V (BR)EBO
I CES
– 45
– 60
– 5.0
—
—
—
—
—
—
Vdc
Vdc
Vdc
(VCE = –45 Vdc, I E= 0 )
—
—
—
—
—
—
– 20
– 10
– 20
nAdc
µAdc
nAdc
(VCE = –45 Vdc, I B= 0 , TA = 150°C)
Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
I EBO
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
BCW68GLT1
GeneralPurposeTransistors
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
—
( IC= –10 mAdc, VCE = –1.0 Vdc )
( IC= –100 mAdc, VCE = –1.0 Vdc )
( IC= –300 mAdc, VCE = –1.0 Vdc )
Collector–Emitter Saturation Voltage
( IC = – 300 mAdc, IB = –30 mAdc )
Base–Emitter Saturation Voltage
( IC = – 500 mAdc, IB = –50 mAdc )
120
160
60
—
—
—
400
—
—
V CE(sat)
V BE(sat)
—
—
—
—
– 1.5
– 2.0
Vdc
Vdc
SMSMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz)
Output Capacitance
f T
100
—
—
—
—
MHz
pF
C obo
18
(VCB = – 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
C ibo
NF
—
—
—
—
105
10
pF
dB
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure
(V CE = – 5.0 Vdc, I C = – 0.2 mAdc, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
BCW68GLT1
GeneralPurposeTransistors
SOT-23
.122(3.10)
.106(2.70)
.008(0.20)
.003(0.08)
.080(2.04)
.070(1.78)
.004(0.10)MAX.
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
2012-11
WILLAS ELECTRONIC CORP.
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