MMBD2004S [WILLAS]
SOT-23 Plastic-Encapsulate Diodes; SOT- 23塑封装二极管
| 型号： | MMBD2004S |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | SOT-23 Plastic-Encapsulate Diodes |
| 文件： | 总2页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
MMBD2004S
SOT-23 Plastic-Encapsulate Diodes
SWITCHING DIODE
SOT-23
FEATURES
MMBD2004S type is a silicon switching dual in series diode
manufactured by the epitaxial planar process, designed for
applications requiring high voltage capability. Power dissipation
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
Moisture Sensitivity Level 1
1
3
2
MARKING : B6D
Maximum Ratings @Ta=25℃
mit
300
Parameter
Symbol
VRM
VR
Unit
V
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
240
V
200
Peak Repetitive Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current t=1μs
Forward Surge Current t=1s
Power Dissipation
I
mA
mA
mA
A
225
625
IFRM
SM
Pd
4.0
1.0
A
250
mW
150
Junction Temperature
TJ
℃
℃
-55~+150
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)
IR
Test
conditions
Min
Max
Unit
Reverse breakdown voltage
IR= 100μA
VR=240V
240
V
Reverse voltage leakage current
Forward voltage
0.1
μA
V
VF
CD
trr
IF=100mA
VR=0V
1
Diode capacitance
f=1MHz
5
pF
ns
Reveres recovery time
IF=IR=30mA,RL=100Ω
50
2012-12
WILLAS ELECTRONIC CORP.
WILLAS
MMBD2004S
SOT-23 Plastic-Encapsulate Diodes
Outline Drawing
SOT-23
.122(3.10)
.106(2.70)
.008(0.20)
.003(0.08)
.080(2.
.070(1.
.004(0.10)MAX.
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
Rev.D
2012-12
WILLAS ELECTRONIC CORP.
相关型号：
MMBD2004S-TP-HF
Rectifier Diode, 2 Element, 0.225A, 240V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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