SE3401 [WILLAS]
S OT-23 Plastic-Encapsulate MOSFETS; S OT- 23塑封装的MOSFET
| 型号： | SE3401 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | S OT-23 Plastic-Encapsulate MOSFETS |
| 文件： | 总4页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
SE3401
SOT-23 Plastic-Encapsulate MOSFETS
P-Channel Enhancement Mode Field Effect Transistor
SOT-23
FEATURE
z
High dense cell design for extremely low RDS(ON).
1. GATE
z
z
Exceptional on-resistance and maximum DC current capability
Pb-Free package is available
2. SOURCE
3. DRAIN
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
D
S
MARKING: R1
G
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
-30
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
V
±12
-4.2
V
A
Continuous Drain Current
Power Dissipation
PD
350
mW
℃/W
℃
Thermal Resistance from Junction to Ambient (t<5s)
Junction Temperature
RθJA
TJ
357
150
Storage Temperature
TSTG
-55~+150
℃
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SE3401
SOT-23 Plastic-Encapsulate MOSFETS
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Off characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current
On characteristics
V(BR)DSS
IDSS
VGS = 0V, ID =-250µA
VDS =-24V,VGS = 0V
VGS =±12V, VDS = 0V
-30
V
-1
µA
nA
IGSS
±100
VGS =-10V, ID =-4.2A
VGS =-4.5V, ID =-4A
VGS =-2.5V,ID=-1A
VDS =-5V, ID =-5A
65
75
90
mΩ
mΩ
mΩ
S
Drain-source on-resistance
(note 1)
RDS(on)
7
Forward tranconductance (note 1)
Gate threshold voltage
Dynamic characteristics (note 2)
Input capacitance
gFS
VGS(th)
VDS =VGS, ID =-250µA
-0.7
-1.3
V
Ciss
Coss
Crss
954
115
77
pF
pF
pF
VDS =-15V,VGS =0V,f =1MHz
Output capacitance
Reverse transfer capacitance
Switching characteristics (note 2)
Turn-on delay time
td(on)
tr
6.3
3.2
ns
ns
ns
ns
Turn-on rise time
VGS=-10V,VDS=-15V,
RL=3.6ꢀ,RGEN=6ꢀ
Turn-off delay time
td(off)
tf
38.2
12
Turn-off fall Time
Drain-source diode characteristics and maximum ratings
-1
Diode forward voltage (note 1)
VSD
IS=-1A,VGS=0V
V
Note :
1. Pulse Test : Pulse width≤300µs, duty cycle≤2%.
2. These parameters have no way to verify.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SE3401
SOT-23 Plastic-Encapsulate MOSFETS
Typical Characteristics
Transfer Characteristics
Output Characteristics
-25
-20
-15
-10
-5
-5
-4
-3
-2
-1
-0
VGS=-10V
VGS=-4.5V
Ta=25℃
Ta=25℃
VGS=-3.0V
Pulsed
Pulsed
VGS=-2.5V
VGS=-2.0V
-0
-0
-1
-2
-3
-4
-5
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
DRAIN TO SOURCE VOLTAGE VDS (V)
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON)
—— ID
RDS(ON) —— VGS
120
100
80
100
80
60
40
20
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=-2.5V
VGS=-4.5V
ID=-2A
60
VGS=-10V
40
20
-0
-2
-4
-6
-8
-10
-0
-2
-4
-6
-8
-10
DRAIN CURRENT ID (A)
GATE TO SOURCE VOLTAGE VGS (V)
——
IS
VSD
-10
-1
Ta=25℃
Pulsed
-0.1
-0.01
-1E-3
-1E-4
-1E-5
-0.0
-0.3
-0.6
-0.9
-1.2
SOURCE TO DRAIN VOLTAGE VSD (V)
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
SE3401
SOT-23 Plastic-Encapsulate MOSFETS
Outline Drawing
SOT-23
.122(3.10)
.106(2.70)
.008(0.20)
.003(0.08)
.080(2.04)
.070(1.78)
.004(0.10)MAX.
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
Rev.D
2012-10
WILLAS ELECTRONIC CORP.
相关型号：
©2020 ICPDF网 联系我们和版权申明