SE9435LT1 [WILLAS]

30V P-Channel Enhancement-Mode MOSFET; 30V P沟道增强型MOSFET


型号：	SE9435LT1
厂家：	WILLAS ELECTRONIC CORP
描述：	30V P-Channel Enhancement-Mode MOSFET 30V P沟道增强型MOSFET
文件：	总4页 (文件大小：412K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

WILLAS

SE9435LT1

30V P-Channel Enhancement-Mode MOSFET

V_DS= -30V

R_DS(ON), V_gs@-10V, I_ds@-5.3A = 70mΩ

R_DS(ON), V_gs@-4.5V, I_ds@-4.2A = 100mΩ

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Improved Shoot-Through FOM

SOT-23

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

▼ Simple Drive Requirement

▼ Small Package Outline

▼ Surface Mount Device

Ordering Information

Device

Marking

Shipping

SE9435LT1

P94

3000/Tape&Reel

Maximum Ratings and Thermal Characteristics (T_A= 25^oC unless otherwise noted)

Symbol

V_DS

Parameter

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_GS

I_D

± 20

-5.3

Pulsed Drain Current ¹⁾

I_DM

-20

TA = 25^oC

TA = 75^oC

1.4

P_D

Maximum Power Dissipation

0.8

^oC

T_J, T_stg

R_θJC

Operating Junction and Storage Temperature Range

-55 to 150

Junction-to-Case Thermal Resistance

^oC/W

Junction-to-Ambient Thermal Resistance (PCB mounted) ²⁾

R_θJA

Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature

2. 1-in²2oz Cu PCB board

3. Guaranteed by design; not subject to production testing

2012-10

WILLAS ELECTRONIC CORP.

WILLAS

SE9435LT1

30V P-Channel Enhancement-Mode MOSFET

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

Static

BV_DSS

R_DS(on)

V_GS(th)

I_DSS

V_GS= 0V, I_D= -250uA

V_GS= -4.5V, I_D= -4.2A

Drain-Source Breakdown Voltage

Drain-Source On-State Resistance

Gate Threshold Voltage

-30

100.0

70.0

-3

70.0

50.0

-1.7

mΩ

_GS= -10V, I_D= -5.3A

V_DS=V_GS, I_D= -250uA

V_DS= -24V, V_GS= 0V

V_GS= ± 20V, V_DS= 0V

V_DS= -10V, I_D= -5.3A

-1

Zero Gate Voltage Drain Current

Gate Body Leakage

I_GSS

±100

g_fs

Forward Transconductance

Dynamic³⁾

Q_g

Total Gate Charge

V_DS=-15V, I_D= -5.3A

Q_gs

Q_gd

t_d(on)

t_r

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

_GS= -10V

V_DD= -15V, R_L= 15Ω

I_D= -1A, V_GEN= -10V

R_G= 6ꢀ

745

440

120

t_d(off)

t_f

C_iss

C_oss

C_rss

Input Capacitance

V_DS= -15V, V_GS= 0V

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

I_S

Max. Diode Forward Current

Diode Forward Voltage

-2.6

-1.3

V_SD

I_S= -2.6A, V_GS= 0V

Note Pu:lse test: pulse width <= 300us, duty cycle<= 2%

2012-10

WILLAS ELECTRONIC CORP.

WILLAS

SE9435LT1

30V P-Channel Enhancement-Mode MOSFET

TYPICAL ELECTRICAL CHARACTERISTICS

2012-10

WILLAS ELECTRONIC CORP.

WILLAS

SE9435LT1

30V P-Channel Enhancement-Mode MOSFET

SOT-23

.122(3.10)

.106(2.70)

.008(0.20)

.003(0.08)

.080(2.04)

.070(1.78)

.004(0.10)MAX.

.020(0.50)

.012(0.30)

Dimensions in inches and (millimeters)

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

2012-10

WILLAS ELECTRONIC CORP.

相关型号：