ESD56181W09 [WILLSEMI]
1-Line, Uni-directional, Transient Voltage Suppressor;
| 型号： | ESD56181W09 |
| 厂家： | 
WILLSEMI |
| 描述： | 1-Line, Uni-directional, Transient Voltage Suppressor |
| 文件： | 总6页 (文件大小：535K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD56181WXX
ESD56181WXX
1-Line, Uni-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD56181WXX is a transient voltage suppressor
designed to protect power interfaces. It is suitable to replace
multiple discrete components in portable electronics.
The ESD56181WXX is specifically designed to protect power
lines.
SOD-323
The ESD56181WXX is available in SOD-323 package.
Standard products are Pb-free and Halogen-free.
Features
Pin1
Pin2
Reverse stand-off voltage: 4.5V ~ 20V
Surge protection according to IEC61000-4-5
see Table 4
Circuit diagram
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Solid-state silicon technology
Applications
X= Device code
* = Month code
Power supply protection
Power management
Marking (Top View)
Order information
Table 1.
Device
Package
Shipping
Marking
TQ*
TR*
ESD56181W04-2/TR SOD-323
ESD56181W05-2/TR SOD-323
ESD56181W09-2/TR SOD-323
ESD56181W10-2/TR SOD-323
ESD56181W12-2/TR SOD-323
ESD56181W15-2/TR SOD-323
ESD56181W18-2/TR SOD-323
ESD56181W20-2/TR SOD-323
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
TL*
TS*
TM*
TN*
TT*
TU*
Will Semiconductor Ltd.
1
Revision 1.2, 2018/02/28
ESD56181WXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp = 8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Symbol
Rating
Unit
Ppk
1800
±30
W
VESD
kV
±30
TJ
TOP
TL
125
oC
oC
oC
oC
Operating temperature
-40~85
260
Lead temperature
Storage temperature
TSTG
-55~150
Electrical characteristics (TA = 25oC, unless otherwise noted)
I
IPP
VRWM Reverse stand-off voltage
IR Reverse leakage current
VBR Reverse breakdown voltage
VF
IF
Forward voltage
Forward current
VFC
IPP
Forward clamping voltage
Peak pulse current
VCL
IPP
Clamping voltage
Peak pulse current
IBR
IR
VFC VF
VRWM VBR VCL
V
IF
IPP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.2, 2018/02/28
ESD56181WXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Table 3.
Reverse
Junction
Reverse
Stand-off Breakdown voltage
leakage current
Forward voltage
VF(V) IF = 20mA
capacitance
F = 1MHz,
Voltage
VBR(V) IBR = 1mA
Type number
IRM(μA) at VRWM
VRWM (V)
VR=0V (pF)
Max.
4.5
Min.
5.2
Typ. Max.
Typ.
Max.
2.0
Min.
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
Max.
1.10
1.10
1.10
1.10
1.10
1.10
1.10
1.10
Typ.
1100
1050
600
Max.
1200
1150
700
5.7
7.1
6.2
7.6
ESD56181W04
ESD56181W05
ESD56181W09
ESD56181W10
ESD56181W12
ESD56181W15
ESD56181W18
ESD56181W20
-
-
-
-
-
-
-
-
5.0
6.6
1.0
9.0
9.7
10.5
11.5
13.6
17.5
21.1
23.2
11.3
12.3
14.5
19.0
23.0
25.0
0.1
10.0
12.0
15.0
18.0
20.0
10.7
12.8
16.0
19.2
21.4
0.1
545
650
0.1
0.1
425
500
320
350
0.1
0.1
260
300
240
275
Table 4.
1)2)
Rated peak pulse current IPP （A）1)2) Clamping voltage VCL(V) at IPP（A）
Type number
Max.
110
100
90
Typ.
12.5
13.5
17.0
19.0
21.5
27.5
33.0
34.5
Max.
15
ESD56181W04
ESD56181W05
ESD56181W09
ESD56181W10
ESD56181W12
ESD56181W15
ESD56181W18
ESD56181W20
16
20
85
21
75
24
55
30
45
35
40
37
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform)
2) Non-repetitive current pulse, according to IEC61000-4-2.
3) Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.2, 2018/02/28
ESD56181WXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
100
Front time: T1= 1.25 T = 8μs
100
90
90
Time to half-value: T2= 20μs
50
T2
10
10
0
t
60ns
30ns
0
5
T1
10
15
Time (μs)
20
25
30
T
tr = 0.7~1ns
Time (ns)
Contact discharge current waveform per IEC61000-4-2
8/20μs waveform per IEC61000-4-5
Pulse waveform: tp = 8/20s
ESD56181W20
35
30
25
20
15
10
5
10
ESD56181W18
ESD56181W15
ESD56181W12
ESD56181W10
ESD56181W09
1
ESD56181W05
ESD56181W04
0.1
0
20
40
60
80
100 120 140
1
10
100
1000
IPP - Peak pulse current (A)
Pulse time (s)
Clamping voltage vs. Peak pulse current
Non-repetitive peak pulse power vs. Pulse time
2.5
100
80
60
40
20
0
2.0
ESD56181W04
1.5
1.0
ESD56181W05
0.5
0.0
-40
-20
0
20
40
60
80
100
0
25
50
TA - Ambient temperature (oC)
Power derating vs. Ambient temperature
75
100
125
150
TA - Ambient temperature (oC)
Leakage current vs. Ambient temperature
Revision 1.2, 2018/02/28
Will Semiconductor Ltd.
4
ESD56181WXX
PACKAGE OUTLINE DIMENSIONS
SOD-323
D
A2
A1
D1
A
Side View
Top View
L1
L
Side View
Dimensions in Millimeters
Symbol
Min.
0.800
0.800
0.000
0.250
0.080
1.600
2.300
1.150
Typ.
Max.
1.100
0.900
0.100
0.400
0.177
1.800
2.800
1.400
A
A1
A2
b
-
0.850
-
-
c
-
D1
D
1.700
-
E
-
L
0.475 Ref.
L1
θ
0.100
0°
-
-
0.500
8°
Recommended land pattern (Unit: mm)
0.80
1.40
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
Will Semiconductor Ltd.
5
Revision 1.2, 2018/02/28
ESD56181WXX
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q3
Q2
Q4
Q1
Q3
Q2
Q4
RD
W
Reel Dimension
7inch
8mm
2mm
Q1
13inch
12mm
4mm
Q2
Overall width of the carrier tape
16mm
8mm
Q3
P1
Pitch between successive cavity centers
Q4
Pin1 Pin1 Quadrant
Will Semiconductor Ltd.
6
Revision 1.2, 2018/02/28
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