ESD5621W04-2/TR [WILLSEMI]
1-Line, Uni-directional, Transient Voltage Suppressor;型号: | ESD5621W04-2/TR |
厂家: | WILLSEMI |
描述: | 1-Line, Uni-directional, Transient Voltage Suppressor |
文件: | 总6页 (文件大小:606K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ESD5621WXX
ESD5621WXX
1-Line, Uni-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD5621WXX is a uni-directional TVS (Transient
Voltage Suppressor). It is specifically designed to protect
sensitive electronic components which are connected to
power lines, from over-stress caused by ESD (Electrostatic
Discharge), EFT (Electrical Fast Transients) and Lightning.
The ESD5621WXX may be used to provide ESD protection
up to ±30kV (contact and air discharge) according to
IEC61000-4-2, and with high surge capability used to protect
USB voltage bus pin (8/20μs) according to IEC61000-4-5.
SOD-323F (Bottom View)
The ESD5621WXX is available in SOD-323F package.
Standard products are Pb-free and Halogen-free.
Pin1
Pin2
Features
Circuit diagram
Reverse stand-off voltage: 4.5V ~ 15V
Surge protection according to IEC61000-4-5
see Table 4
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Pin1
Pin2
XX
*
Solid-state silicon technology
XX = Device code
*
= Month code
Applications
Marking (Top View)
Power supply protection
Power management
Order information
Table 1.
Device
Package
Shipping
Marking
TE*
ESD5621W04-2/TR SOD-323F
ESD5621W10-2/TR SOD-323F
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
TJ*
Q*
ESD5621W-2/TR
SOD-323F
TD*
ESD5621W15-2/TR SOD-323F
Will Semiconductor Ltd.
1
Revision 1.3, 2017/07/25
ESD5621WXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp=8/20μs)
ESD according to IEC61000-4-2 air discharge
ESD according to IEC61000-4-2 contact discharge
Junction temperature
Symbol
Rating
Unit
Ppk
1400
±30
W
VESD
kV
±30
TJ
TOP
TL
125
oC
oC
oC
oC
Operating temperature
-40~85
260
Lead temperature
Storage temperature
TSTG
-55~150
Electrical characteristics (TA = 25oC, unless otherwise noted)
I
IPP
VRWM Reverse stand-off voltage
IR Reverse leakage current
VBR Reverse breakdown voltage
VF
IF
Forward voltage
Forward current
VFC
IPP
Forward clamping voltage
Peak pulse current
VCL
IPP
Clamping voltage
Peak pulse current
IBR
IR
VFC VF
VRWM VBR VCL
V
IF
IPP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.3, 2017/07/25
ESD5621WXX
Electrical characteristics (TA = 25oC, unless otherwise noted)
Table 3.
Reverse
Junction
Reverse
Standoff
Voltage
VRWM (V)
Breakdown voltage
VBR(V) IBR = 1mA
Forward voltage
VF(V) IF = 20mA
capacitance
F = 1MHz,
leakage current
Type number
IRM(μA) at VRWM
VR =0V (pF)
Max
Min
Typ
Max
Typ
Max
5.0
Min
0.45
0.45
0.45
0.45
Max
1.25
1.25
1.25
1.25
Typ
900
350
300
270
Max
1200
500
ESD5621W04
ESD5621W10
ESD5621W
4.5
5.2
6.1
7.0
-
10.0
12.0
15.0
11.5
13.0
16.0
13.2
15.0
18.0
15.0
17.0
20.0
0.1
-
-
0.1
400
ESD5621W15
0.1
350
Table 4.
Clamping voltage
VCL(V) at IPP = 16A,
tp = 100ns 2)3)
Clamping voltage
VCL(V) at
Rated peak pulse
current IPP (A)1)3) VCL(V) at IPP(A)1)3)
Clamping voltage
Type number
VESD = 8kV 2)3)
ESD5621W04
ESD5621W10
ESD5621W
95
60
50
45
14.5
25.0
27.5
31.0
7.0
8.0
15.0
16.0
20.0
16.0
17.0
21.0
ESD5621W15
Notes:
1) Non-repetitive current pulse, according to IEC61000-4-5.(8/20µs current waveform)
2) Non-repetitive current pulse, according to IEC61000-4-2.
3) Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.3, 2017/07/25
ESD5621WXX
Typical characteristics (TA = 25oC, unless otherwise noted)
100
Front time: T1= 1.25 T = 8s
100
90
Time to half-value: T2= 20s
90
50
T2
10
10
0
t
60ns
30ns
20
0
T
tr = 0.7~1ns
Time (s)
T1
Time (ns)
Contact discharge current waveform per IEC61000-4-2
8/20μs waveform per IEC61000-4-5
1000
35
30
25
20
15
10
5
ESD5621W15
ESD5621W
ESD5621W10
ESD5621W04
Pulse waveform: tp = 8/20s
f = 1MHz
VAC = 50mV
900
800
700
600
500
400
300
200
100
0
ESD5621W04
ESD5621W10
ESD5621W15
ESD5621W
0
10 20 30 40 50 60 70 80 90 100
IPP - Peak pulse current (A)
0
2
4
6
8
10
VR - Reverse voltage (V)
Capacitance vs. Reverse voltage
12
14
Clamping voltage vs. Peak pulse current
10000
1000
100
100
80
60
40
20
0
0
25
50
75
100
125
150
1
10
100
1000
TA - Ambient temperature (oC)
Pulse time (s)
Non-repetitive peak pulse power vs. Pulse time
Power derating vs. Ambient temperature
Will Semiconductor Ltd.
4
Revision 1.3, 2017/07/25
ESD5621WXX
PACKAGE OUTLINE DIMENSIONS
SOD-323F
D
D1
TOP VIEW
SIDE VIEW
SIDE VIEW
Dimensions in Millimeters
Symbol
Min.
Typ.
-
Max.
1.10
0.18
0.40
1.80
1.35
2.80
A
c
0.60
0.08
0.25
1.60
1.15
2.30
0.13
-
b
D1
E
1.70
1.25
-
D
Recommend land pattern (Unit: mm)
0.80
1.40
0.80
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
group to ensure your PCB design guidelines are met.
2.20
Will Semiconductor Ltd.
5
Revision 1.3, 2017/07/25
ESD5621WXX
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q3
Q2
Q4
Q1
Q3
Q2
Q4
User Direction of Feed
RD
W
Reel Dimension
7inch
13inch
12mm
4mm
Q2
Overall width of the carrier tape
8mm
2mm
Q1
16mm
P1
Pitch between successive cavity centers
8mm
Q3
Q4
Pin1 Pin1 Quadrant
Will Semiconductor Ltd.
6
Revision 1.3, 2017/07/25
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