WCR250N65TH-3/TR [WILLSEMI]
650V N-Channel Super Junction MOSFET;
| 型号： | WCR250N65TH-3/TR |
| 厂家： | 
WILLSEMI |
| 描述： | 650V N-Channel Super Junction MOSFET |
| 文件： | 总8页 (文件大小：1417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WCR250N65 series
WCR250N65TF/TH
650V N-Channel Super Junction MOSFET
Description
Features
700V@TJ=150°C
Typ.RDS(on)=0.21Ω
Low gate charge
The WCR250N65 series is new generation of high voltage
MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.This advanced technology
has been tailored to minimize conduction loss, provide
superior switching performance, and withstand extreme
dv/dt rate and higher avalanche energy. This device is
100% avalanche tested
100% Rg tested
suitable for various AC/DC power conversion in switching
mode operation for higher efficiency.
Order Information
Device
Package
Marking
Units/Tube Units/Real
WCR250N65TF-3/T
WCR250N65TH-3/TR
TO-220F
WCR250N65TFYW(1)
WCR250N65THYW(2)
50
TO-263E-2L
800
G
D
S
G
D
S
Note 1: WCR250N65TF=Device code ;Y=Year ;W=Week (A~z);
Note 2: WCR250N65TH=Device code ;Y=Year ;W=Week (A~z);
TO-220F
TO-263
Absolution Maximum RatingsTA=250C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
WCR250N65TH
WCR250N65TF
Unit
650
V
Gate-Source Voltage
Continuous Drain CurrentA
Pulsed Drain Current
VGS
±30
TC=25°C
13.8
10
7.9
5
ID
A
TC=100°C
IDM
55
A
mJ
W
Single Pulsed Avalanche EnergyB
TC=25°C
Derateabove 25°C
EAS
270
125
1
39
PD
Power Dissipation
0.31
W/°C
°C
Operating and Storage Temperature Range
Lead Temperature
TJ,TSTG
TL
-55~150
260
°C
Thermal Resistance Ratings
Maximum Junction-to-AmbientD
Maximum Junction-to-Case
RθJA
RθJC
62
1
80
°C/W
3.2
Will Semiconductor Ltd.
1
Oct，2018 - Rev.1.1
WCR250N65 series
Electronics Characteristics (TA=25oC, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
DYNAMIC PARAMETERS
Input Capacitance
BVDSS
IDSS
VGS = 0 V, ID = 250uA,TJ=25°C
VDS =650V, VGS = 0V,TJ=25°C
VDS = 0 V, VGS =±30V
650
V
1
uA
nA
IGSS
±100
VGS(TH)
VGS = VDS, ID = 500uA
VGS = 10V, ID = 6.9A
2
3
4
V
C
RDS(on)
0.21
0.25
Ω
CISS
COSS
CRSS
QG(TOT)
QGS
1206
29.7
1.5
VGS = 0 V,
Output Capacitance
pF
f = 1.0 MHz,VDS = 400 V
Reverse Transfer Capacitance
Total Gate Charge
31.3
7.8
VGS = 10 V,VDS = 400 V,
ID = 13.8A
Gate-to-Source Charge
Gate-to-Drain Charge
Gate resistance
nC
Ω
QGD
Rg
12.4
6.2
VGS=0V ,F=1MHZ,drain open
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
tr
td(off)
tf
16.5
16.2
67
VGS = 10V,
Rise Time
VDS = 400 V,
ns
Turn-Off Delay Time
ID = 6.9A,RG=10 Ω
Fall Time
19.5
Drain to Source Diode Characteristics and Maximum Ratings
Forward Voltage
VGS = 0 V, IS = 13.8A
VSD
IS
1.5
V
A
Body-Diode Continuous Current
Body-Diode Pulsed Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Peak reverse recovery Current
13.8
55
ISM
Trr
A
285
2.6
nS
uC
A
IF=6.9A,dI/dt=100A/us,VDS=400V
Qrr
Irrm
(NOTE D)
18.2
NOTES:
A.
B.
C.
D.
Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75
L=60mH, IAS=3A, VDD=50V, Starting TJ=25℃
Pulse Test: Pulse width≤300us, Duty Cycle ≤2% sensitively Independent of Operating Temperature Typical Characteristics
These tests are performed with the device mounted on 1 in2 FR-4 board with 1oz. Copper, in a still air environment with TA=25°C.
Will Semiconductor Ltd.
2
Oct，2018 - Rev.1.1
WCR250N65 series
Typical Characteristics (TA=25oC, unless otherwise noted)
Output characteristics
On-Resistance vs. Drain current
hold voltage vs. Junction temperature
Will Semiconductor Ltd.
3
Oct，2018 - Rev.1.1
WCR250N65 series
Gate charge Characteristics
Power dissipation
Will Semiconductor Ltd.
4
Oct，2018 - Rev.1.1
WCR250N65 series
100
10
100
10
Limit by Rdson*
10us
Limit by Rdson*
10us
100us
100us
1
1
1ms
10ms
DC
1ms
TJ(MAX)=150C
TC=25C
10ms
0.1
0.01
TJ(MAX)=150C
TC=25C
0.1
Single Pulse
DC
Bvdss Limit
Single Pulse
Bvdss Limit
0.01
1
10
100
1000
1
10
100
1000
VDS- Drain Source Voltage (V)
VDS- Drain Source Voltage (V)
TO-263
TO-220F
Safe operating area(Note D)
Safe operating area(Note D)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse
0.1
single pulse
0.01
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (s)
TO-263 Transient thermal response(Junction to case)
10
In descending order
D=0.5, 0.3,0.1, 0.05,0.02, 0.01, single pluse
1
0.1
0.01
1E-3
1E-4
Single pulse
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
TO-220F Transient thermal response(Junction to case)(Note D)
Will Semiconductor Ltd.
5
Oct，2018 - Rev.1.1
WCR250N65 series
PACKAGE OUTLINE DIMENSIONS
TO–220F–3L
E
A
A1
A2
A4
b1
A3
c
e
b
SIDE VIEW
BOTTOM VIEW
TOP VIEW
Dimensions in Millimeters
Symbol
Min.
4.50
2.45
Typ.
4.72
2.56
0.72Ref
2.78
-
Max.
4.90
2.65
A
A1
A2
A3
A4
b
2.68
-
2.88
0.45
0.70
1.18
0.45
15.67
15.55
9.96
0.80
1.28
0.52
15.87
15.75
10.16
2.45BSC
6.68
12.98
-
0.90
b1
c
1.38
0.60
D
16.07
15.95
10.36
D1
E
e
H1
L
6.48
12.68
-
6.88
13.28
3.50
L1
L2
φP
Q
2.54BSC
3.18
-
3.08
3.20
3°
3.28
3.40
7°
θ
5°
Will Semiconductor Ltd.
6
Oct，2018 - Rev.1.1
WCR250N65 series
PACKAGE OUTLINE DIMENSIONS
TO–263E–2L
A
D
c1
A1
b1
c
b
e
e1
TOP VIEW
SIDE VIEW
BOTTOM VIEW
Dimensions in Millimeters
Symbol
Min.
4.47
0.00
1.12
0.71
1.17
0.31
1.17
10.01
8.50
Typ.
4.57
-
Max.
4.67
0.15
1.42
0.91
1.37
0.53
1.37
10.31
8.90
A
A1
B
1.27
0.81
1.27
0.42
1.27
10.16
8.70
2.54Ref
5.08
15.22
5.20
2.54
1.50
b
b1
c
c1
D
E
e
e1
L
4.98
14.94
4.95
2.34
1.30
0°
5.18
15.50
5.45
2.74
1.70
8°
L1
L2
L3
Φ
V
6.60Ref
Will Semiconductor Ltd.
7
Oct，2018 - Rev.1.1
WCR250N65 series
TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1 Q2
Q3
Q1 Q2
Q3
Q4
Q4
User Direction of Feed
RD
W
Reel Dimension
Overall width of the carrier tape
7inch
8mm
13inch
24mm
12mm
16mm
P1
Pitch between successive cavity centers
16mm
Q4
2mm
Q1
4mm
Q2
8mm
Q3
Pin1 Pin1 Quadrant
Will Semiconductor Ltd.
8
Oct，2018 - Rev.1.1
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