WCR670N65T-3/T [WILLSEMI]
650V N-Channel Super Junction MOSFET;
| 型号： | WCR670N65T-3/T |
| 厂家： | 
WILLSEMI |
| 描述： | 650V N-Channel Super Junction MOSFET |
| 文件： | 总9页 (文件大小：1675K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WCR670N65 series
WCR670N65T/TF/TG
650V N-Channel Super Junction MOSFET
Description
Features
700V@TJ=150°C
Typ.RDS(on)=0.55Ω
Low gate charge
The WCR670N65 series is new generation of high voltage
MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.This advanced technology
has been tailored to minimize conduction loss, provide
superior switching performance, and withstand extreme
dv/dt rate and higher avalanche energy. This device is
suitable for various AC/DC power conversion in switching
mode operation for higher efficiency.
100% avalanche tested
100% Rg tested
pin2
D
G
pin1
pin3
S
Order Information
Device
Package
Marking
Units/Tube Units/Real
WCR670N65T-3/T
WCR670N65TF-3/T
WCR670N65TG-3/TR
TO-220
WCR670N65TYW(1)
WCR670N65TFYW(2)
WCR670N65TGYW(3)
50
TO-220F
50
G
D
S
G
D
S
G
D
S
TO-252E-2L
3000
TO-220F
TO-252
TO-220
Note 1: WCR670N65T=Device code ;Y=Year ;W=Week (A~z);
Note 2: WCR670N65TF=Device code ;Y=Year ;W=Week (A~z);
Note 3: WCR670N65TG=Device code ;Y=Year ;W=Week (A~z);
Absolution Maximum RatingsTA=250C unless otherwise noted
WCR670N65T
WCR670N65TG
WCR670N65TF
Parameter
Symbol
Unit
V
Drain-Source Voltage
VDS
VGS
650
±30
Gate-Source Voltage
Continuous Drain CurrentA
Pulsed Drain Current
TC=25°C
7.8
4.9
4.8
3
ID
A
TC=100°C
IDM
31.2
106
A
mJ
W
Single Pulsed Avalanche EnergyB
TC=25°C
Derateabove 25°C
EAS
80
30
Power Dissipation
PD
0.64
0.24
W/°C
°C
Operating and Storage Temperature Range
Lead Temperature
TJ,TSTG
TL
-55~150
260
°C
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Maximum Junction-to-Case
RθJA
RθJC
62 C
1.55
80
°C/W
4.2
Will Semiconductor Ltd.
1
Sep, 2018 - Rev.1.0
WCR670N65 series
Electronics Characteristics (TA=25oC, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-SourceBreakdownVoltage
Zero Gate Voltage Drain Current
Gate-to-sourceLeakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
DYNAMIC PARAMETERS
Input Capacitance
BVDSS
IDSS
VGS = 0 V, ID = 250uA,TJ=25°C
VDS =650V, VGS = 0V,TJ=25°C
VDS = 0 V, VGS =±30V
650
V
1
uA
nA
±100
IGSS
VGS(TH)
VGS = VDS, ID = 250uA
VGS = 10V, ID = 3.9A
2
3
4
V
D
RDS(on)
0.55
0.67
Ω
CISS
COSS
CRSS
QG(TOT)
QGS
481
15
VGS = 0 V,
Output Capacitance
pF
f = 1.0 MHz,VDS = 400 V
Reverse Transfer Capacitance
Total Gate Charge
1.4
13.6
3.2
5.6
9.6
VGS = 10 V,VDS = 400 V,
ID = 7.8A
Gate-to-Source Charge
Gate-to-Drain Charge
Gate resistance
nC
QGD
Rg
VGS=0V ,F=1MHZ,drain open
Ω
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
tr
td(off)
tf
11
21
40
31
VGS = 10V,
Rise Time
VDS = 400 V,
ns
Turn-Off Delay Time
ID = 3.9A,RG=10 Ω
Fall Time
Drain to Source Diode Characteristics and Maximum Ratings
Forward Voltage
VGS = 0 V, IS = 7.8A
VSD
IS
1.5
V
A
Body-Diode Continuous Current
Body-Diode Pulsed Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Peak reverse recovery Current
7.8
31.2
205
1.4
ISM
Trr
A
nS
uC
A
IF=3.9A,dI/dt=100A/us,VDS=400V
Qrr
Irrm
12
NOTES:
A.
B.
C.
D.
Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75
L=30mH, IAS=2.7, VDD=50V, Starting TJ=25℃
These tests are performed with the device mounted on 1 in2 FR-4 board with 1oz. Copper, in a still air environment with TA=25°C
Pulse Test: Pulse width≤300us, Duty Cycle ≤2%sensitively Independent of Operating Temperature Typical Characteristics
Will Semiconductor Ltd.
2
Sep, 2018 - Rev.1.0
WCR670N65 series
Typical Characteristics (TA=25oC, unless otherwise noted)
15
10
5
16
12
8
VGS=7V
VDS=20V
VGS=10V
VGS=6.0V
T=150oC
VGS=5.5V
T=25oC
VGS=5.0V
4
0
0
0
2
4
6
8
10
0
4
8
12
16
20
VGS -Gate to Source Voltage(V)
VDS-Drain-to-Source Voltage (V)
Output characteristics
Transfer characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.8
0.7
0.6
0.5
0.4
0.3
VGS=10V
ID=3.9A
VGS=6.0V
VGS=10V
0
2
4
6
8
10
-50
0
50
TJ (oC)
100
150
IDS-Drian to Source Current(A)
On-Resistance vs. Drain current
ID=250uA
On-Resistance vs. Junction temperature
1.4
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
ID=250uA
-50
0
50
100
150
-50
0
50
TJ (oC)
100
150
TJ(oC)
Breakdown Voltage vs. Junction temperature
Threshold voltage vs. Junction temperature
Will Semiconductor Ltd.
3
Sep, 2018 - Rev.1.0
WCR670N65 series
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
Eoss
1
150oC
25oC
0.1
0.3
0.6
VSD-Source to Drain Voltage (V)
0.9
0
100
200
VDS(V)
300
400
Body diode forward voltage
Cossstored Energy
10000
1000
100
10
10
VGS=0
f=1MHz
8
6
4
2
0
Ciss
VDD=400V，ID=7.8A
Coss
1
Crss
0.1
0
5
10
15
0
100
200
300
400
VDS-Source to Source Voltage(V)
Qg(nC)
Gate charge Characteristics
Capacitance
90
60
30
0
TO-220&TO-252
TO-200F
0
50
100
150
Tcase(oC)
Power dissipation
Will Semiconductor Ltd.
4
Sep, 2018 - Rev.1.0
WCR670N65 series
100
10
100
10
10us
10us
Limit by Rdson*
Limit by Rdson*
100us
100us
1
1
1ms
1ms
DC
10ms
TJ(MAX)=150C
TC=25C
0.1
0.01
0.1
0.01
TJ(MAX)=150C
TC=25C
DC
Bvdss Limit
Single Pulse
Single Pulse
Bvdss Limit
1
10
100
1000
1
10
100
1000
VDS- Drain Source Voltage (V)
VDS- Drain Source Voltage (V)
TO-220&TO-252
TO-220F
Safe operating area(Note D)
Safe operating area(Note D)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse
0.1
single pulse
0.01
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Square Wave Pulse Duration (s)
TO-252&TO-220
Transient thermal response(Junction to case)
10
1
In descending order
D=0.5, 0.3,0.1, 0.05,0.02, 0.01, single pluse
0.1
Single pulse
0.01
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
TO-220F Transient thermal response(Junction to case)
Will Semiconductor Ltd.
5
Sep, 2018 - Rev.1.0
WCR670N65 series
Package outline dimensions
TO-220F-3L
E
A
A1
A2
A4
θ
b1
A3
c
e
b
SIDE VIEW
BOTTOM VIEW
TOP VIEW
Dimensions in Millimeters
Symbol
Min.
4.50
2.45
Typ.
4.72
2.56
0.72Ref
2.78
-
Max.
4.90
2.65
A
A1
A2
A3
A4
b
2.68
-
2.88
0.45
0.70
1.18
0.45
15.67
15.55
9.96
0.80
1.28
0.52
15.87
15.75
10.16
2.45BSC
6.68
12.98
-
0.90
b1
c
1.38
0.60
D
16.07
15.95
10.36
D1
E
e
H1
L
6.48
12.68
-
6.88
13.28
3.50
L1
L2
φP
Q
2.54BSC
3.18
-
3.08
3.20
3°
3.28
3.40
7°
θ
5°
Will Semiconductor Ltd.
6
Sep, 2018 - Rev.1.0
WCR670N65 series
PACKAGE OUTLINE DIMENSIONS
TO–220–3Lꢀ
E
A
A1
E1
b1
b
A2
e
c
e1
SIDE VIEW
TOP VIEW
BOTTOM VIEW
Dimensions in Millimeters
Symbol
Min.
4.40
1.27
2.30
0.70
1.30
0.45
15.30
9.10
12.90
9.70
7.70
Typ.
4.50
1.30
2.40
0.80
-
Max.
4.60
1.33
2.50
0.90
1.37
0.60
16.10
9.30
13.30
10.20
8.10
A
A1
A2
b
b1
c
0.50
15.70
9.20
13.10
9.90
7.90
2.45Ref
5.08Ref
6.50
13.08
-
D
D1
D2
E
E1
e
e1
H1
L
6.30
12.78
-
6.70
13.38
3.50
L1
L2
∅P
Q
4.06Ref
3.60
-
3.55
2.73
3°
3.65
2.87
7°
θ1
5°
Will Semiconductor Ltd.
7
Sep, 2018 - Rev.1.0
WCR670N65 series
PACKAGE OUTLINE DIMENSIONS
TO–252E–2L
E
A
b3
c2
E1
A1
F
b2
b
c
e
TOP VIEW
SIDE VIEW
SIDE VIEW
Dimensions in Millimeters
Symbol
Min.
2.20
0
Typ.
2.30
0.08
0.60
0.75
5.35
0.50
0.51Ref
5.60
-
Max.
2.40
0.15
0.70
0.90
5.50
0.55
A
A1
b
0.50
0.60
5.20
0.45
b2
b3
c2
c
D
5.40
4.57
6.40
3.81
5.80
D1
E
-
6.80
-
6.60
-
E1
e
2.30Ref
0.80
9.80
1.59
2.70
1.00
F
0.70
9.40
1.40
2.40
0.80
0.90
10.20
1.77
3.00
1.20
H
L
L1
L4
Will Semiconductor Ltd.
8
Sep, 2018 - Rev.1.0
WCR670N65 series
TO-252 TAPE AND REEL INFORMATION
Reel Dimensions
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1 Q2
Q3
Q1 Q2
Q3
Q4
Q4
User Direction of Feed
RD
W
Reel Dimension
Overall width of the carrier tape
Pitch between successive cavity centers
7inch
8mm
2mm
Q1
13inch
12mm
4mm
Q2
16mm
8mm
Q3
P1
Q4
Pin1 Pin1 Quadrant
Will Semiconductor Ltd.
9
Sep, 2018 - Rev.1.0
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