WL2831D11-4/TR [WILLSEMI]

500mA ,Ultra Low Drop-Out, CMOS LDO With BIAS Supply;
WL2831D11-4/TR
型号: WL2831D11-4/TR
厂家: WILLSEMI    WILLSEMI
描述:

500mA ,Ultra Low Drop-Out, CMOS LDO With BIAS Supply

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WL2831  
WL2831  
Http://www.sh-willsemi.com  
500mA ,Ultra Low Drop-Out, CMOS LDO  
With BIAS Supply  
Descriptions  
The WL2831 is a high accuracy, low noise, high speed,  
low dropout CMOS Linear regulator with high ripple  
rejection.It is equipped with NMOS pass transistor and  
a separate bias supply voltage(VBIAS). The devices  
offer a new level of cost effective performance in  
cellular phones, laptop and other portable devices.  
DFN1212-4L  
4
3
2
The WL2831 are available in fixed output voltages  
between 0.8V and 3.3V, and capable of driving up to  
500mA. Other features include over temperature  
protection and over current protection.  
5
1
The WL2831 regulators are available in DFN1212-4L  
Package. Standard products are Pb-free and  
Halogen-free.  
Pin Configuration (Top View)  
Features  
Input voltage  
Bias voltage  
Output range  
Output current  
PSRR  
: 0.8V~5.5V  
: 2.4V~5.5V  
: 0.8V~3.3V  
X: Voltage Code  
* : Month Code  
: 500mA Typ.  
: 80dB @ 1kHz  
: 20uVrms(10Hz to 100kHz)  
For detail marking information, please see page 9.  
Low Noise  
Dropout voltage : 150mV @ IOUT=500mA  
Quiescent current : 60μA Typ.  
Shut-down current : < 1.0μA  
Marking  
Recommend capacitor : 2.2uF  
ORDER INFORMATION  
For detail order information, please see page 9.  
Applications  
MP3/MP4 Players  
Cellphones, radiophone, digital cameras  
Bluetooth, wireless handsets  
Others portable electronics device  
1
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  
WL2831  
Typical Application  
Pin Description  
DFN1212-4L  
PIN Symbol Description  
1
2
VOUT  
BIAS  
Output  
Bias voltage supply for internal  
control circuits  
3
4
5
EN  
VIN  
Enable (Active high)  
Input Voltage Supply pin  
Ground  
GND  
Block Diagram  
2
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  
WL2831  
Absolute Maximum Ratings  
Parameter  
Value  
Unit  
V
VIN Range  
-0.36.0  
-0.36.0  
-0.3VIN  
-0.3VIN  
600  
VBIAS Range  
V
VEN Range  
V
VOUT Range  
V
IOUT  
mA  
oC  
oC  
oC  
V
Lead Temperature Range  
Storage Temperature Range  
Operating Junction Temperature Range  
260  
-55 ~ 150  
150  
HBM  
MM  
6000  
ESD Ratings  
300  
V
Recommend Operating Ratings  
Parameter  
Value  
Unit  
V
oC  
Operating Supply voltage  
Operating Temperature Range  
Thermal Resistance, RθJA (DFN1212-4L)  
2.45.5  
-4085  
170  
oC/W  
3
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  
WL2831  
Electronics Characteristics  
1.Ta=25oC, VIN=VOUT+0.5V, CIN=1.0uF, CBIAS =0.1uF, COUT=2.2uF, unless otherwise noted  
Parameter  
Symbol  
Condition  
Min.  
Typ. Max.  
Unit  
V
VOUT  
Vdrop  
2.4  
+
5.5  
VIN  
Operating VIN Voltage Range  
V
OUT1.0V  
V
V
Operating BIAS Voltage  
Range  
5.5  
5.5  
VBIAS  
VOUT>1.0V  
VOUT+1.4V  
VOUT  
*
VOUT*  
Output Voltage accuracy  
VOUT  
IOUT=1mA  
VOUT  
V
0.99  
600  
1.01  
Current Limit  
ILIM  
VOUT=90%VOUT(NOM)  
mA  
mA  
mV  
mV  
mV  
μA  
μA  
Output Short Current  
VIN Line Regulation  
VBIAS Line Regulation  
Load Regulation  
ISC  
190  
0.1  
0.1  
30  
VLINE  
VLINE  
VLoad  
IQ  
VIN=VOUT+0.5V~5.5V, IOUT=1mA  
VBIAS=2.7~5.5V, IOUT=1mA  
IOUT=1~500mA  
5
5
70  
110  
1.0  
Quiescent Current  
Shut-down Current  
VBIAS=2.7V, VOUT=1.1V,IOUT=0  
VEN=0V  
60  
ISHDN  
VIN to VOUT,F=1kHz ,IOUT=10mA.  
VIN >VOUT+0.5V  
80  
65  
Power Supply Rejection Rate  
dB  
VBIAS to VOUT,F=1kHz ,IOUT=10mA.  
VIN >VOUT+0.5V  
EN logic high voltage  
EN logic low voltage  
EN Input Current  
VENH  
VENL  
IEN  
VIN=5.5V, IOUT=1mA  
1.2  
V
V
VIN=5.5V, VOUT=0V  
0.4  
1.0  
VEN= 0 to 5.5V  
μA  
VIN =VOUT+0.5V, VOUT(NOM)=1V,  
IOUT=10mA,f=10Hz to 100KHz  
Output Noise Voltage  
eNO  
20  
μVrms  
oC  
oC  
Thermal shutdown threshold  
Thermal shutdown hysteresis  
Auto-discharge Nch Tr.  
ON Resistance  
TSD  
160  
20  
TSD  
Ω
RLOW  
VBIAS=3.5VVCE=0V  
50  
4
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  
WL2831  
Dropout Voltage  
1.Ta=25oC,VIN=VOUT+0.5V CIN=1.0uF, CBIAS =0.1uF, COUT=2.2uF,unless otherwise note  
2.The specifications with * are guaranteed by engineering at -40℃≦Ta85℃  
Parameter  
Symbol  
Condition  
IOUT=300mA  
Typ  
IOUT=500mA  
Typ Max  
Unit  
Output Voltages  
VBIAS input voltages  
Min  
Max  
150*  
160*  
170*  
170*  
180*  
180*  
190*  
200*  
Min  
0.8VVOUT<1.0V  
1.0VVOUT<1.2V  
1.2VVOUT<1.4V  
1.4VVOUT<1.6V  
1.6VVOUT<1.8V  
1.8VVOUT<2.1V  
2.1VVOUT<2.5V  
2.5VVOUT<3.3V  
3.3V  
3.3V  
100  
150  
240*  
240*  
250*  
260*  
270*  
280*  
290*  
300*  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
110  
160  
3.3V  
120  
170  
3.3V  
125  
180  
VOUT+1.7V  
VOUT+1.7V  
VOUT+1.7V  
VOUT+1.7V  
130  
190  
135  
195  
135  
195  
135  
200  
5
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  
WL2831  
Typical characteristics  
1.Ta=25oC,VIN=VOUT+0.5V CIN=1.0uF, CBIAS =0.1uF, COUT=2.2uF,unless otherwise noted  
6
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  
WL2831  
Typical characteristics  
1.Ta=25oC,VBIAS=5.0V VIN DC=VOUT+1.0V VIN ac=500mV-Vp-p VCIN=none, CBIAS =0.1uF, COUT=2.2uF  
Start-up From EN  
1.Ta=25oC, VIN= VOUT +0.5V CIN=1.0uF, CBIAS =0.1uF, COUT=2.2uF,unless otherwise noted  
VOUT=1.1V EN ON  
VOUT=3.3V EN ON  
VOUT=1.1V EN OFF  
VOUT=3.3V EN OFF  
7
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  
WL2831  
Load Transient Response  
1.Ta=25oC, VIN= VOUT +0.5V CIN=1.0uF, CBIAS =0.1uF,COUT=2.2uF,unless otherwise noted)  
2.Tr=Tf=1us  
VOUT=1.1V 1mA→300mA→1mA  
VOUT=3.3V 1mA→300mA→1mA  
VOUT=1.1V 1mA→500mA→1mA  
VOUT=3.3V 1mA→500mA→1mA  
8
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  
WL2831  
ORDER INFORMATION  
Vout  
Ordering No.  
(V)  
Operating  
Package  
Marking  
D*  
Shipping  
Temperature  
Tape and Reel,  
3,000  
WL2831D09-4/TR  
WL2831D10-4/TR  
WL2831D105-4/TR  
WL2831D11-4/TR  
WL2831D12-4/TR  
WL2831D33-4/TR  
0.9  
1.0  
1.05  
1.1  
1.2  
3.3  
DFN1212-4L  
DFN1212-4L  
DFN1212-4L  
DFN1212-4L  
DFN1212-4L  
DFN1212-4L  
-40~+85°C  
-40~+85°C  
-40~+85°C  
-40~+85°C  
-40~+85°C  
-40~+85°C  
Tape and Reel,  
3,000  
C*  
Tape and Reel,  
3,000  
H*  
Tape and Reel,  
3,000  
A*  
Tape and Reel,  
3,000  
G*  
Tape and Reel,  
3,000  
B*  
Marking:  
X: Voltage Code  
* : Month Code  
9
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  
WL2831  
PACKAGE OUTLINE DIMENSIONS  
DFN1212-4L  
Dimensions in Millimeters  
Symbol  
Min.  
0.34  
0.00  
Typ.  
0.37  
0.02  
0.10 Ref.  
0.30  
0.30  
1.20  
1.20  
0.63  
0.63  
0.80  
0.90  
0.20  
0.18  
-
Max.  
0.40  
0.05  
A
A1  
A3  
b
0.25  
0.25  
1.15  
1.15  
0.58  
0.58  
0.75  
0.80  
0.15  
0.13  
0.15  
0.00  
0.35  
0.35  
1.25  
1.25  
0.68  
0.68  
0.85  
1.00  
0.25  
0.23  
-
L
D
E
D2  
E2  
e
e1  
H
M
K
K1  
0.05  
0.10  
Recommend land pattern (Unit: mm)  
1.50  
0.20  
0.45  
Notes:  
This recommended land pattern is for reference purposes  
only. Please consult your manufacturing group to ensure  
your PCB design guidelines are met.  
0.27  
10  
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  
WL2831  
TAPE AND REEL INFORMATION  
Reel Dimensions  
Tape Dimensions  
P1  
Quadrant Assignments For PIN1 Orientation In Tape  
Q1 Q2  
Q3  
Q1 Q2  
Q3  
Q4  
Q4  
User Direction of Feed  
RD  
W
Reel Dimension  
Overall width of the carrier tape  
Pitch between successive cavity centers  
7inch  
8mm  
2mm  
Q1  
13inch  
12mm  
P1  
4mm  
Q2  
8mm  
Q3  
Q4  
Pin1 Pin1 Quadrant  
11  
Will Semiconductor Ltd.  
Nov, 2018 – Rev 1.1  

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