首页 |元器件品牌

WL2855E12-5/TR [WILLSEMI]

Low noise, Low Power Consumption, 12V Input, 300mA, CMOS LDO;
WL2855E12-5/TR
型号： WL2855E12-5/TR
厂家： WILLSEMI    WILLSEMI
描述：

Low noise, Low Power Consumption, 12V Input, 300mA, CMOS LDO
文件： 总12页 (文件大小：1838K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
WL2855E  
WL2855E  
Http://www.sh-willsemi.com  
Low noise, Low Power Consumption, 12V  
Input, 300mA, CMOS LDO  
Descriptions  
The WL2855E series is a high accuracy, low noise,  
12V Input, 300mA, CMOS Linear regulator with high  
ripple rejection. The devices offer a new level of cost  
effective performance in cellular phones, laptop and  
notebook computers, and other portable devices.  
SOT-23-5L  
The WL2855E has the fold-back maximum output  
current which depends on the output voltage. So the  
current limit functions both as a short circuit protection  
and as an output current limiter.  
The WL2855E regulators are available in standard  
SOT-23-5L Package. Standard products are Pb-free  
and Halogen-free.  
Pin Configuration (Top View)  
Features  
Input Voltage Range  
Output Voltage Range  
Output Current  
: 2.5V~12V  
:1.2V~5V  
:300mA  
Fixed Voltage Accuracy  
Quiescent current  
:±1%(Vo≥2.5V)  
:1.1uA  
Dropout voltage  
: 480mV @Vo=3.3V  
: ≥0.1uF  
2855: Device code  
L*  
Recommend capacitor  
Short-Circuit Protection  
:
Special code  
Y : Year Code  
W: Week Code  
Applications  
Mobile Phone  
Order Information  
Cellphones, radiophone, digital cameras  
Bluetooth, wireless handsets  
For detail order information, please see page 12.  
Others portable electronics device  
Will Semiconductor Ltd.  
1
Nov, 2018 – Rev 1.0  
WL2855E  
Typical Application  
Pin Description  
SOT-23-5L  
PIN Symbol Description  
1
2
3
4
5
VIN  
VSS  
NC  
Input  
Ground  
No Connection  
No Connection  
Output  
NC  
VOUT  
Recommend capacitor :≥0.1uF  
Block Diagram  
Will Semiconductor Ltd.  
2
Nov, 2018 – Rev 1.0  
WL2855E  
Absolute Maximum Ratings  
Parameter  
Value  
400  
Unit  
mW  
V
Power Dissipation, PD@TA=25℃  
VIN Range  
-0.3~13  
-0.3~5.5  
300  
VOUT Range  
V
IOUT  
mA  
oC  
oC  
oC  
V
Lead Temperature Range  
Storage Temperature Range  
Operating Junction Temperature Range  
260  
-55~150  
150  
HBM  
MM  
4000  
200  
ESD Ratings  
V
Recommend Operating Ratings  
Parameter  
Value  
2.5~12  
-40~85  
250  
Unit  
V
oC  
Operating Supply voltage  
Operating Temperature Range  
Thermal Resistance, RθJA (SOT-23-5L)  
oC/W  
Will Semiconductor Ltd.  
3
Nov, 2018 – Rev 1.0  
WL2855E  
Electronics Characteristics  
(Ta=25oC, VIN=VOUT+1V, CIN=COUT=1μF, IOUT=1mA，unless otherwise noted)  
Parameter  
Symbol  
Condition  
Min.  
-25  
Typ. Max.  
Unit  
VOUT≤2.5V  
VOUT>2.5V  
VOUT  
+25  
1.01*  
Vout  
12  
mV  
Output Voltage  
VOUT  
0.99*  
Vout  
2.5  
VOUT  
V
Input Voltage  
VIN  
ILIM  
V
Current Limit  
VIN≥3V  
300  
mA  
mV  
VOUTt=3.3V, Io=300mA  
500  
Dropout Voltage  
VDROP  
VOUTt=4V, Io=300mA  
VIN=VOUT+1~12V  
IOUT=1~300mA  
450  
1
mV  
mV  
Line Regulation  
Load Regulation  
Quiescent Current  
Short Current  
△VLINE  
△VLoad  
IQ  
5
25  
1.1  
220  
70  
50  
25  
54  
50  
2.2  
mV  
VIN=4V, IOUT=0  
μA  
ISHORT  
VOUT short to GND  
mA  
f=100Hz  
dB  
Power Supply Rejection Rate  
Output Noise Voltage  
PSRR  
eNO  
Vo=3.3V, Io=10mA f=1kHz  
f=10kHz  
dB  
dB  
Vo=3.3V, Io=30mA  
μVRMS  
Will Semiconductor Ltd.  
4
Nov, 2018 – Rev 1.0  
WL2855E  
Typical characteristics (Ta=25oC, VIN=VOUT+1V, IOUT=1mA，CIN=COUT=1μF, unless otherwise noted)  
VOUT=1.2V  
1.50  
1.25  
1.00  
0.75  
0.50  
IOUT=1mA  
0.25  
0.00  
0
2
4
6
8
10  
12  
12  
12  
Input Voltage (V)  
Output Voltage vs. Input Voltage  
VOUT=3.3V  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
IOUT=1mA  
0.0  
0
2
4
6
8
10  
Input Voltage (V)  
Output Voltage vs. Input Voltage  
Vout=4.0V  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
I
=1mA  
OUT  
0.0  
0
2
4
6
8
10  
Input Voltage (V)  
Output Voltage vs.Input Voltage  
Will Semiconductor Ltd.  
5
Nov, 2018 – Rev 1.0  
WL2855E  
VOUT=1.2V  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
IOUT=0mA  
0.00  
0
2
4
6
8
10  
12  
Input Voltage (V)  
Quiescent Current vs.Input Voltage  
VOUT=3.3V  
Vdropout  
300  
280  
260  
240  
220  
200  
180  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
VOUT=3.3V  
VOUT=4V  
IOUT=150mA  
Vout=3.3V  
Vout=4V  
160  
-40  
-20  
0
20  
40  
60  
80  
100  
0
100  
200  
300  
400  
500  
Temperature(OC)  
Drpout Voltage vs.Temperature  
Output Current(mA)  
Dropout Voltage vs. Output Current  
Will Semiconductor Ltd.  
6
Nov, 2018 – Rev 1.0  
WL2855E  
VOUT=1.2V  
VOUT=3.3V  
90  
80  
70  
60  
50  
40  
30  
20  
10  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
=3VDC+0.5VPP,C  
=1μF  
OUT  
V
=4.3VDC+0.5VPP,C  
=1μF  
OUT  
IN  
IN  
I
I
I
=10mA  
=50mA  
=150mA  
I
I
I
=10mA  
=50mA  
=150mA  
OUT  
OUT  
OUT  
OUT  
OUT  
OUT  
0
100  
1000  
10000  
100000  
1000000  
100  
1000  
10000  
100000  
1000000  
Frequency (Hz)  
Frequency (Hz)  
VOUT=4.0V  
90  
80  
70  
60  
50  
40  
30  
20  
10  
V
=5VDC+0.5VPP,C  
=1μF  
OUT  
IN  
I
I
I
=10mA  
=50mA  
=150mA  
OUT  
OUT  
OUT  
0
100  
1000  
10000  
100000  
1000000  
Frequency (Hz)  
Will Semiconductor Ltd.  
7
Nov, 2018 – Rev 1.0  
WL2855E  
1.Start up & Shunt down  
VOUT=3.3V  
VIN=4.3V,COUT=1μF,IOUT=1mA  
VIN=4.3V,COUT=1μF,IOUT=300mA  
VIN=4.3V,COUT=1μF,IOUT=300mA  
VOUT=4V  
VIN=5V,COUT=1μF,IOUT=1mA  
VIN=5V,COUT=1μF,IOUT=300mA  
Will Semiconductor Ltd.  
8
Nov, 2018 – Rev 1.0  
WL2855E  
2.Load & Line Transient  
VIN=3V,VOUT=1.2V,COUT=1μF,IOUT=1mA-40mA  
VIN=3V,VOUT=1.2V,COUT=1μF,IOUT=50mA-100mA  
VIN=4.3V,VOUT=3.3V,COUT=1μF,IOUT=1mA-40mA VIN=4.3V,VOUT=3.3V,COUT=1μF,IOUT=50mA-100mA  
VIN=5V,VOUT=4V,COUT=1μF,IOUT=1mA-40mA  
VIN=5V,VOUT=4V,COUT=1μF,IOUT=50mA-100mA  
VIN=4.3-5.3V,VOUT=3.3V,IOUT=10mA  
VIN=6-7V,VOUT=4V,IOUT=10mA  
Will Semiconductor Ltd.  
9
Nov, 2018 – Rev 1.0  
WL2855E  
PACKAGE OUTLINE DIMENSIONS  
SOT-23-5L  
D
b
0.20  
e
e1  
TOP VIEW  
SIDE VIEW  
SIDE VIEW  
Dimensions in Millimeters  
Symbol  
Min.  
-
Typ.  
-
Max.  
1.45  
0.15  
1.30  
0.50  
0.21  
3.12  
3.00  
1.80  
A
A1  
A2  
b
0.00  
0.90  
0.30  
0.10  
2.72  
2.60  
1.40  
-
1.10  
0.40  
c
-
D
2.92  
E
2.80  
E1  
e
1.60  
0.95 BSC  
1.95 BSC  
0.45  
e1  
L
0.30  
0.60  
θ
8︒ Ref.  
Will Semiconductor Ltd.  
10  
Nov, 2018 – Rev 1.0  
WL2855E  
TAPE AND REEL INFORMATION  
Reel Dimensions  
Tape Dimensions  
P1  
Quadrant Assignments For PIN1 Orientation In Tape  
Q1 Q2  
Q3  
Q1 Q2  
Q3  
User Direction of Feed  
Q4  
Q4  
RD  
W
Reel Dimension  
Overall width of the carrier tape  
Pitch between successive cavity centers  
7inch  
8mm  
2mm  
Q1  
13inch  
12mm  
4mm  
Q2  
16mm  
8mm  
P1  
Q3  
Q4  
Pin1 Pin1 Quadrant  
Will Semiconductor Ltd.  
11  
Nov, 2018 – Rev 1.0  
WL2855E  
ORDER INFORMATION  
Vout  
(V)  
Operating  
Ordering No.  
WL2855E12-5/TR  
WL2855E33-5/TR  
WL2855E40-5/TR  
Package  
SOT-23-5L  
SOT-23-5L  
SOT-23-5L  
Marking  
Shipping  
Temperature  
Tape and Reel,  
3000  
1.2  
3.3  
4.0  
-40~85℃  
LEYW  
LNYW  
LRYW  
Tape and Reel,  
3000  
-40~85℃  
-40~85℃  
Tape and Reel,  
3000  
Will Semiconductor Ltd.  
12  
Nov, 2018 – Rev 1.0  

相关型号：

WL2855E33-5/TR

 Low noise, Low Power Consumption, 12V Input, 300mA, CMOS LDO
WILLSEMI

WL2855E40-5/TR

 Low noise, Low Power Consumption, 12V Input, 300mA, CMOS LDO
WILLSEMI

WL2862E

 High Input Voltage, Low Quiescent Current LDO
WILLSEMI

WL2862E30-5/TR

 High Input Voltage, Low Quiescent Current LDO
WILLSEMI

WL2862E33-5/TR

 High Input Voltage, Low Quiescent Current LDO
WILLSEMI

WL2862E50-5/TR

 High Input Voltage, Low Quiescent Current LDO
WILLSEMI

WL2862EA0-5/TR

 High Input Voltage, Low Quiescent Current LDO
WILLSEMI

WL2862K

 High Input Voltage, Low Quiescent Current LDO
WILLSEMI

WL2862K30-3/TR

 High Input Voltage, Low Quiescent Current LDO
WILLSEMI

WL2862K33-3/TR

 High Input Voltage, Low Quiescent Current LDO
WILLSEMI

WL2862K50-3/TR

 High Input Voltage, Low Quiescent Current LDO
WILLSEMI

WL2862KC0-3/TR

 High Input Voltage, Low Quiescent Current LDO
WILLSEMI
©2020 ICPDF网 联系我们和版权申明