WS4612ECC-5/TR [WILLSEMI]
60mΩ, Current Limited, Power Distribution Switch;
| 型号： | WS4612ECC-5/TR |
| 厂家： | 
WILLSEMI |
| 描述： | 60mΩ, Current Limited, Power Distribution Switch |
| 文件： | 总16页 (文件大小：1763K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WS4612
WS4612
60mΩ, Current Limited, Power Distribution Switch
Http//:www.sh-willsemi.com
4
5
Descriptions
The WS4612 is a high-side switch with ultra-low ON
resistance P-MOSFET. Integrated current-limit function
can limit inrush current for heave capacitive load, over
load current, and short-circuit current to protect power
source.
4612
**YW
1
2
3
SOT-23-5L
Marking
WS4612EA
WS4612E(B/C/D/E)
The WS4612 is also integrated reverse protection
function to eliminate any reverse current flow across
the switch when the device is off. Output
auto-discharge while the device shutdown made
output voltage off quickly. Thermal shutdown function
can protect the device and load.
/EN
The WS4612 is available in SOT-23-5L,SOT23-6,
TSOT23-5(FC) packages. Standard product is Pb-free
and Halogen-free.
Pin configuration (Top view)
For detail marking information, please see page 14.
Order Information
For detail order information, please see page 14.
Features
Input voltage range
: 2.5-5.5V
Main switch RON
: 60mΩ@VIN=5.0V
: ±15%
Ordering Information
Current limit accurate
Adj. current limit range
Typical Rise Time
WS4612
-- 5 /TR
: 0.1A-2.0A(Typ.)
: 600uS
Quiescent Supply Current : 26uA
Under Voltage Lockout
EN Function & Discharge
A : EN high enable & Discharge
B : EN low enable & Discharge
C : EN high enable & no Discharge
D : EN low enable & no Discharge
Auto discharge
Reverse block (No “body diode”)
Over temperature protection
Output Current Limit
A : Adjustable version
B : 1.4A
Applications
USB peripherals
USB Dongle
USB 3G data card
C : 2.1A
3.3V or 5V Power Switch
3.3V or 5V Power Distribution
D : 2.4A
E : 3A
Package Code
E : SOT23-5
Will Semiconductor Ltd.
1
Mar, 2019 - Rev. 1.0
WS4612
Typical Applications
WS4612EA
Note： a 100k ohm resistor is strongly recommended between enable pin and GND.
Pin Descriptions
WS4612EA
Pin Number
Symbol
OUT
Descriptions
Output Pin
1
2
3
4
5
GND
ISET
EN/EN
IN
Ground
Current limit setting
Enable Pin
Input Pin
WS4612E(B/C/D/E)
Note： a 100k ohm resistor is strongly recommended between enable pin and GND.
Pin Descriptions
WS4612E(B/C/D/E)
Pin Number
Symbol
OUT
GND
FLG
Descriptions
Output Pin
Ground
1
2
3
4
5
Fault Flag Pin, Open-Drain, Active Low
EN/EN
IN
Enable Pin
Input Pin
Will Semiconductor Ltd.
2
Mar, 2019 - Rev. 1.0
WS4612
Block Diagram( WS4612EA)
Block Diagram( WS4612E(B/C/D/E) )
OUT
IN
EN/EN
FLG
GND
Will Semiconductor Ltd.
3
Mar, 2019 - Rev. 1.0
WS4612
Absolute maximum ratings
Parameter
Symbol
VIN
Value
-0.3~6.5
-0.3~6.5
-0.3~6.5
-0.3~6.5
-0.3~6.5
-40~150
260
Unit
V
IN pin voltage range
OUT pin voltage range
ISET pin voltage range
FLG pin voltage range
EN pin voltage range
Junction temperature
Lead temperature(Soldering, 10s)
Storage temperature
VOUT
VISET
VFLG
VEN
V
V
V
V
TJ
oC
oC
oC
V
TL
Tstg
HBM
MM
-55~150
8000
IN, OUT Pin ESD Ratings
500
V
HBM
MM
7000
V
ISET, FLG, EN Pin ESD Ratings
300
V
These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum
Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions
beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may
affect device reliability.
Recommend Operating Conditions
Parameter
Symbol
VIN
Value
2.5~5.5
-40~85
250
Unit
V
oC
Supply input voltage range
Operating ambient temperature
Thermal Resistance
TA
RθJA
oC/W
Will Semiconductor Ltd.
4
Mar, 2019 - Rev. 1.0
WS4612
Electronics Characteristics( WS4612EA )
Ta=25oC, VIN=5V, CIN=COUT=1uF, unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ.
Max. Units
Quiescent supply current
Shutdown current
IQ
IOUT=0, VIN=VEN=5V
VEN=0V
26
50
uA
uA
ISD
1.0
VIN=VEN=0V, VOUT=5V,
Current flow to VIN
VIN=VEN=5V,
Reverse current
IREV
1.0
70
uA
Main-FET ON resistance
RON
60
50
mΩ
IOUT=500mA
VEN=0V,
Auto-discharge FET ON resistance
Current Limit(1)
RDCHG
ILIM
100
1.1
Ω
A
A
VIN =VOUT=5V
RSET=6.8K
0.9
1.0
OUT shorted to
GND,Rset=6.8K
OUT connected to
GND，CL=1uF
VIN=5V
Short-circuit output current
IOS
0.65
Short circuit current limiting
response time
tSHORT
1.0
us
EN input low voltage
VIL
VIH
0.4
V
V
EN input high voltage
VIN=5V
1.2
OUT pin turn-on time after EN ON
Fault flag output blanking time
Over-temperature shutdown
threshold
tON
CL=1uF, RL=5ohm
VIN=5.0V
600
7.5
us
ms
tBLANK
TSD
160
20
oC
oC
Over-temperature threshold
hysteresis
THYS
Under voltage lock out threshold
Under voltage lock out hysteresis
VUVLO
2.1
2.4
V
VUVLO-HYS
200
mV
(1) Pulse test,Tp=380uS。
Will Semiconductor Ltd.
5
Mar, 2019 - Rev. 1.0
WS4612
Electronics Characteristics( WS4612E)
Ta=25oC, VIN=5V, CIN=COUT=1uF, unless otherwise noted
Parameter
Symbol Conditions
Min. Typ. Max. Units
Quiescent supply current
Shutdown current
IQ
IOUT=0, VIN=VEN=5V
26
50
uA
uA
ISD
VEN=0V
1.0
VIN=VEN=0V, VOUT=5V,
Current flow to VIN
Reverse current
IREV
1.0
70
uA
Main-FET ON resistance
RON
VIN=VEN=5V, IOUT=500mA
60
mΩ
WS4612EB
WS4612EC
WS4612ED
WS4612EE
1.2
1.8
2.1
2.7
1.4
2.1
2.4
3
1.6
2.4
2.7
3.3
A
A
A
A
Current Limit(1)
ILIM
Auto-discharge FET ON
resistance
VEN=0V,
RDCHG
50
100
Ω
VIN =VOUT=5V
OUT connected to GND，
CL=1uF
Short circuit current limiting
response time
tSHORT
1.0
us
EN input low voltage
EN input high voltage
OUT pin turn-on time after EN ON
Fault flag output blanking time
Over-temperature shutdown
threshold
VIL
VIH
VIN=5V
0.4
V
V
VIN=5V
1.2
tON
VIN=5V CL=1uF RL=5ohm
VIN=5.0V
600
7.5
us
ms
tBLANK
TSD
160
20
oC
oC
Over-temperature threshold
hysteresis
THYS
Under voltage lock out threshold
VUVLO
2.1
2.4
V
Under voltage lock out hysteresis VUVLO-HYS
200
mV
(1) Pulse test,Tp=380uS。
Will Semiconductor Ltd.
6
Mar, 2019 - Rev. 1.0
WS4612
Typical Characteristics (WS4612EEA, Ta=25oC, unless otherwise noted)
81
78
75
72
69
66
63
60
57
54
51
48
78
75
72
69
66
63
60
57
54
51
48
45
IOUT=0.5A
RSET=6.8K
VIN=5V
RSET=6.8K
IOUT=0.5A
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-50 -25
0
25
50
75 100 125
Temperature(0C)
Input Voltage(V)
ON Resistance vs. Input Voltage
ON Resistance vs. Temperature
35
34
33
32
31
30
29
28
27
26
25
40
38
36
34
32
30
28
26
24
22
20
VIN=5V
RSET=6.8K
NO LOAD
RSET=6.8K
NO LOAD
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-50 -25
0
25
50
75 100 125
Temperature(0C)
Input Voltage(V)
Quiescent current vs. Input Voltage
Quiescent current vs. Temperature
2.10
1.10
RSET=3.4K
RSET=6.8K
2.08
2.06
2.04
2.02
2.00
1.98
1.96
1.94
1.92
1.90
1.09
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
2.5
3.0
3.5
4.0
4.5
5.0
5.5
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Input Voltage(V)
Input Voltage(V)
Current Limit vs. Input Voltage
Current Limit vs. Input Voltage
Will Semiconductor Ltd.
7
Mar, 2019 - Rev. 1.0
WS4612
0.50
0.49
0.48
0.47
0.46
0.45
0.44
0.43
0.42
0.41
0.40
2.00
1.98
1.96
1.94
1.92
1.90
1.88
1.86
1.84
1.82
1.80
1.78
RSET=17K
VIN=5V
RSET=3.4K
-50 -25
0
25
50
75 100 125
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Temperature(0C)
Input Voltage(V)
Current Limit vs. Input Voltage
Current Limit vs. Temperature
1.10
0.426
0.424
0.422
0.420
0.418
0.416
0.414
0.412
0.410
0.408
0.406
0.404
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90
VIN=5V
VIN=5V
RSET=6.8K
RSET=17K
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature(0C)
Temperature(0C)
Current Limit vs. Temperature
Current Limit vs. Temperature
Will Semiconductor Ltd.
8
Mar, 2019 - Rev. 1.0
WS4612
Typical Characteristics ( WS4612EE, Ta=25oC, unless otherwise noted )
85
80
75
70
65
60
55
75
70
65
60
55
50
45
IOUT=1.0A
IOUT=1.0A
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-50
-25
0
25
50
75
100
125
Temperature(oC)
Input Voltage(V)
ON Resistance vs. Input Voltage
ON Resistance vs. Temperature
30
29
28
27
26
25
24
23
22
32
30
28
26
24
22
20
18
-50
-25
0
25
50
75
100
125
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Temperature(OC)
Input Voltage(V)
Quiescent current vs. Input Voltage
Quiescent current vs. Temperature
8
7
6
5
4
3
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Input Voltage(V)
FLAG delay time vs. Input Voltage
Will Semiconductor Ltd.
9
Mar, 2019 - Rev. 1.0
WS4612
Typical Characteristics (WS4612EAA , Ta=25oC, unless otherwise noted)
Startup from Power ON
Startup from Enable ON
Shutdown from Power OFF
Current Limit Response
Startup from Power ON
Startup from Enable ON
Shutdown from Enable OFF
Short Circuit Response
Will Semiconductor Ltd.
10
Mar, 2019 - Rev. 1.0
WS4612
Typical Characteristics ( WS4612EEA), Ta=25oC, unless otherwise noted )
Startup from Power ON
Startup from Enable ON
Shutdown from Power OFF
Current Limit Response
Startup from Power ON
Startup from Enable ON
Shutdown from Enable OFF
Short Circuit Response
Will Semiconductor Ltd.
11
Mar, 2019 - Rev. 1.0
WS4612
Operation Information
Power Switch
The power switch is a P-channel MOSFET with low RDS(ON) for power management or USB power distribution
applications. The WS4612 has reverse voltage protection to prevents current flow from OUT to IN and IN to
OUT when device is off.
Current-Limit Protection( WS4612EA )
The WS4612 provide current limit protection function to protect power source when over-current condition
occurs. The current limit Ioc can be adjusted by external resistor connected between ISET pin and GND. The
Ioc typical value can be calculated using following equation:
6.8K
IO（C A)
RSET
Current-Limit Protection( WS4612E(B/C/D/E) )
The WS4612 provide current limit protection function to protect power source when over-current condition
occurs. The typical current limit threshold is set internally to approximately 1.4A(WS4612EB),
2.1A(WS4612EC), 3.5A(WS4612ED), 4.2A(WS4612EE).
Short-Circuit Protection
The WS4612 provide short circuit protection function. The output current will be limited to safe level. The
short-circuit protection is used to reduce power dissipation of the device and protect power source during
short-circuit condition.
Fault indicate( WS4612E(B/C/D/E) )
The FLG open drain output is asserted (active low) with 7.5ms(Typ.) delay when an over-current or
over-temperature condition is encountered. The FLG signal will remain asserted until the over-current or
over-temperature condition is removed.
UVLO Protection
To avoid malfunction of the WS4612 at low input voltages, an under voltage lockout is included that disables
the device, until the input voltage exceeds 2.1V (Typ.)
Shutdown Mode
Drive EN to place the WS4612 in shutdown mode. In shutdown mode, input current falls to smaller than 1uA.
Thermal Shutdown
As soon as the junction temperature (TJ) exceeds 160oC (Typ.), the WS4612 goes into thermal shutdown. In
this mode, the device is turned off and will turn on again until Junction temperature falls below 140oC (Typ.).
Will Semiconductor Ltd.
12
Mar, 2019 - Rev. 1.0
WS4612
Application Information
Input Capacitor
A 1uF input bypass ceramic capacitor(CIN) from IN to GND, located near the WS4612 is strongly
recommended to suppress the voltage overshooting during short circuit fault event. Without the bypass
capacitor, the output short may cause sufficient ringing on the input (from supply lead inductance) to damage
the device.
Output Capacitor
A low ESR, 150uF aluminum electrolytic or tantalum between OUT and GND is strongly recommended to
reduce the voltage droop during hot-plug of downstream peripheral. Higher value output capacitor is better
when the output load is heavy. Additionally, bypassing the output with a 1uF ceramic capacitor improves the
immunity of the device to short-circuit transients.
PCB Layout consideration
The PCB layout should be carefully performed to maximize thermal dissipation and to minimize voltage drop.
The following guidelines must be considered:
1. Please place the input capacitors near the IN pin as close as possible.
2. Output decoupling capacitors for load must be placed near the load as close as possible for decoupling
high frequency ripples.
3. Locate WS4612 and output capacitors near the load to reduce parasitic resistance and inductance for
excellent load transient performance.
4. The negative pins of the input and output capacitors and the GND pin must be connected to the ground
plane of the load.
5. Keep IN and OUT traces as wide and short as possible.
Will Semiconductor Ltd.
13
Mar, 2019 - Rev. 1.0
WS4612
Order Information
Output
Operating
Ordering No.
Current
ENABLE
Shutdown
Resistor
Package
Marking
Shipping
Temperature
Active
Low
4612
BBYW
4612
WS4612EBB-5/TR
WS4612ECC-5/TR
WS4612EDA-5/TR
WS4612EDB-5/TR
WS4612EAA-5/TR
WS4612EAC-5/TR
1A
1.5A
2A
Yes
No
SOT23-5L
SOT23-5L
SOT23-5L
SOT23-5L
SOT23-5L
SOT23-5L
-40~85oC
-40~85oC
-40~85oC
-40~85oC
-40~85oC
-40~85oC
3000/Reel&Tape
3000/Reel&Tape
3000/Reel&Tape
3000/Reel&Tape
3000/Reel&Tape
3000/Reel&Tape
Active
High
CCYW
4612
Active
High
Yes
Yes
Yes
No
DAYW
4612
Active
Low
2A
DBYW
4612
Active
High
ADJ
ADJ
AAYW
4612
Active
High
ACYW
Marking Information
4612
**
= Device code
=Special code
= Year code
= Week code
Marking
Y
W
Will Semiconductor Ltd.
14
Mar, 2019 - Rev. 1.0
WS4612
Package outline dimensions
SOT-23-5L
D
b
M
(Ⅰ)
(Ⅱ)
e
e1
TOP VIEW
SIDE VIEW
SIDE VIEW
Dimensions in Millimeters
Symbol
Min.
-
Typ.
Max.
1.45
0.15
1.30
0.50
0.21
3.12
3.00
1.80
A
A1
A2
b
-
0.00
0.90
0.30
0.10
2.72
2.60
1.40
-
1.10
0.40
-
c
D
2.92
2.80
1.60
0.95 BSC
1.90 BSC
0.45
0.15
-
E
E1
e
e1
L
0.30
0.10
0.00
0°
0.60
0.25
0.25
8°
M
K
θ
-
Will Semiconductor Ltd.
15
Mar, 2019 - Rev. 1.0
WS4612
TAPE AND REEL INFORMATION
Reel Dimensions
P1
Tape Dimensions
Quadrant Assignments For PIN1 Orientation In Tape
Q1 Q2
Q3
Q1 Q2
Q3
User Direction of Feed
Q4
Q4
RD
W
Reel Dimension
Overall width of the carrier tape
Pitch between successive cavity centers
7inch
8mm
2mm
Q1
13inch
12mm
4mm
Q2
16mm
8mm
Q3
P1
Q4
Pin1 Pin1 Quadrant
Will Semiconductor Ltd.
16
Mar, 2019 - Rev. 1.0
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