WSB20L100T [WILLSEMI]

Power Schottky Barrier Rectifier;


型号：	WSB20L100T
厂家：	WILLSEMI
描述：	Power Schottky Barrier Rectifier
文件：	总3页 (文件大小：1892K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

WSB20L100T/WSB20L100TF

WSB20L100T/ WSB20L100TF

Power Schottky Barrier Rectifier

Features

www.sh-willsemi.com

Circuit



2x10A average rectified forward current

Low forward voltage and Low leakage current

High Junction temperature

WSB

20L100

WSB

20L100

TFYW

TOYW

High forward and reverse Surge capability

A1 K1/K2 A2

K1/K2 A2

Applications

TO-220F

TO-220



High frequency switch model power supplies

WSB20L100 = Device code

DC-DC Convertors, Power adapters

TO TF

= Special code

=Year

=Week（A~z）

Marking

Absolute maximum ratings

Parameter

Symbol

Value

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

V_RM

V_R

I_F

100

Per diode

Average rectified forward current

Per device

I_F

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave

I_FSM

200

Junction temperature

Operating temperature

Storage temperature

T_J

150

⁰C

Topr

Tstg

-55 ~ 150

Thermal Resistance Ratings

Maximum Thermal Resistance

TO-220

R_θJC

2.0

°C/W

Junction To case (Per leg)

Order information

Units/Tube

Device

Package

Marking

WSB20L100T-3/T

WSB20L100TOYW

WSB20L100TFYW

TO-220

WSB20L100TF-3/T

TO-220F

Will Semiconductor Ltd.

Jan, 2015 - Rev. 1.2

WSB20L100T/WSB20L100TF

(Per diode, T =25^oC)

Electronics characteristics

Parameter

Symbol

Condition

I_R=0.5mA

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

Forward voltage

V_R

V_F

I_R

100

0.6

I_F=10A

0.7

Reverse current

V_R=100V

100

Junction capacitance

C_J

V_R=25V, F=1MHz

180

Typical characteristics (Ta=25^oC, unless otherwise noted)

0.01

1E-4

1E-6

1E-8

-40^oC

-25^oC

25^oC

-40^O

-25^O

25^O

85^O

85^oC

0.1

125^oC

150^oC

125^O

150^O

0.01

1E-3

100

0.0

0.2

0.4

0.6

0.8

1.0

Forward Voltage (V)

Reverse Voltage (V)

Forward voltage vs. Forward current

Reverse current vs. Reverse voltage

10000

1000

100

f = 1MHz

100

125

150

Reverse Voltage (V)

Case Temperature (⁰C)

Forward Current Derating Curve

Junction capacitance vs. Reverse voltage

Will Semiconductor Ltd.

Jan, 2015 - Rev. 1.2

WSB20L100T/WSB20L100TF

Package outline dimensions

TO-220

TO-220F

Will Semiconductor Ltd.

Jan, 2015 - Rev. 1.2

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