W25Q256JWCIQ [WINBOND]
1.8V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI;
| 型号： | W25Q256JWCIQ |
| 厂家： | 
WINBOND |
| 描述： | 1.8V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI |
| 文件： | 总95页 (文件大小：2359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
W25Q256JW
1.8V 256M-BIT
SERIAL FLASH MEMORY WITH
DUAL/QUAD SPI
Publication Release Date: December 08. 2017
- Revision B
W25Q256JW
Table of Contents
1.
2.
3.
GENERAL DESCRIPTIONS.............................................................................................................5
FEATURES.......................................................................................................................................5
PACKAGE TYPES AND PIN CONFIGURATIONS...........................................................................6
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
Pad Configuration 6x5-mm/ 8x6-mm....................................................................................6
Pad Description WSON 6x5-mm/ 8x6-mm ..........................................................................6
Pin Configuration SOIC 300-mil ...........................................................................................7
Pin Description SOIC 300-mil...............................................................................................7
Ball Configuration TFBGA 8x6-mm (5x5 or 6x4 Ball Array) .................................................8
Ball Description TFBGA 8x6-mm .........................................................................................8
Ball Configuration WLCSP ...................................................................................................9
Ball Description WLCSP.......................................................................................................9
4.
PIN DESCRIPTIONS......................................................................................................................10
4.1
4.2
4.3
4.4
4.5
4.6
Chip Select (/CS)................................................................................................................10
Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)...................................10
Write Protect (/WP) ............................................................................................................10
HOLD (/HOLD) ...................................................................................................................10
Serial Clock (CLK)..............................................................................................................10
Reset (/RESET)..................................................................................................................10
5.
6.
BLOCK DIAGRAM..........................................................................................................................11
FUNCTIONAL DESCRIPTIONS.....................................................................................................12
6.1
SPI Operations ...................................................................................................................12
6.1.1 Standard SPI Instructions.....................................................................................................12
6.1.2 Dual SPI Instructions............................................................................................................12
6.1.3 Quad SPI Instructions...........................................................................................................12
6.1.4 3-Byte / 4-Byte Address Modes............................................................................................13
6.1.5 Software Reset & Hardware /RESET pin..............................................................................13
6.2
Write Protection..................................................................................................................14
7.
STATUS AND CONFIGURATION REGISTERS............................................................................15
7.1
Status Registers .................................................................................................................15
7.1.1 Erase/Write In Progress (BUSY) – Status Only ................................................................15
7.1.2 Write Enable Latch (WEL) – Status Only..........................................................................15
7.1.3 Block Protect Bits (BP3, BP2, BP1, BP0) – Volatile/Non-Volatile Writable .......................16
7.1.4 Top/Bottom Block Protect (TB) – Volatile/Non-Volatile Writable .......................................16
7.1.5 Complement Protect (CMP) – Volatile/Non-Volatile Writable............................................16
7.1.1 Status Register Protect (SRP, SRL) – Volatile/Non-Volatile Writable ...............................17
7.1.2 Erase/Program Suspend Status (SUS) – Status Only.......................................................18
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W25Q256JW
7.1.3 Security Register Lock Bits (LB3, LB2, LB1) – Volatile/Non-Volatile OTP Writable..........18
7.1.4 Quad Enable (QE) – Volatile/Non-Volatile Writable ..........................................................18
7.1.5 Current Address Mode (ADS) – Status Only.....................................................................19
7.1.6 Power-Up Address Mode (ADP) – Non-Volatile Writable..................................................19
7.1.7 Write Protect Selection (WPS) – Volatile/Non-Volatile Writable .......................................19
7.1.8 Output Driver Strength (DRV1, DRV0) – Volatile/Non-Volatile Writable ...........................20
7.1.9 Reserved Bits – Non Functional........................................................................................20
7.1.10 W25Q256JW Status Register Memory Protection (WPS = 0, CMP = 0) ...........................21
7.1.11 W25Q256JW Status Register Memory Protection (WPS = 0, CMP = 1) ...........................22
7.1.12 W25Q256JW Individual Block Memory Protection (WPS=1) .............................................23
7.2
Extended Address Register – Volatile Writable Only ......................................................24
8.
INSTRUCTIONS.............................................................................................................................25
8.1
Device ID and Instruction Set Tables .................................................................................25
8.1.1 Manufacturer and Device Identification ................................................................................25
8.1.2 Instruction Set Table 1 (Standard/Dual/Quad SPI, 3-Byte Address Mode)(1) .......................26
8.1.3 Instruction Set Table 2 (Dual/Quad SPI Instructions,3-Byte Address Mode) .......................27
8.1.4 Instruction Set Table 3 (Standard SPI, 4-Byte Address Mode)(1)..........................................28
8.1.5 Instruction Set Table 4 (Dual/Quad SPI Instructions, 4-Byte Address Mode) ......................29
8.2
Instruction Descriptions ......................................................................................................31
8.2.1 Write Enable (06h) ...............................................................................................................31
8.2.2 Write Enable for Volatile Status Register (50h)....................................................................31
8.2.3 Write Disable (04h)...............................................................................................................32
Figure 7. Write Disable Instruction for SPI Mode..............................................................................32
8.2.4 Read Status Register-1 (05h), Status Register-2 (35h) & Status Register-3 (15h) ..............32
8.2.5 Write Status Register-1 (01h), Status Register-2 (31h) & Status Register-3 (11h) ..............33
8.2.6 Read Extended Address Register (C8h) ..............................................................................35
8.2.7 Write Extended Address Register (C5h) ..............................................................................36
8.2.8 Enter 4-Byte Address Mode (B7h)........................................................................................37
8.2.9 Exit 4-Byte Address Mode (E9h) ..........................................................................................37
8.2.10 Read Data (03h).................................................................................................................38
8.2.11 Read Data with 4-Byte Address (13h) ................................................................................39
8.2.12 Fast Read (0Bh) .................................................................................................................40
8.2.13 Fast Read with 4-Byte Address (0Ch) ................................................................................41
8.2.14 Fast Read Dual Output (3Bh) .............................................................................................42
8.2.15 Fast Read Dual Output with 4-Byte Address (3Ch)............................................................43
8.2.16 Fast Read Quad Output (6Bh)............................................................................................44
8.2.17 Fast Read Quad Output with 4-Byte Address (6Ch)...........................................................45
8.2.18 Fast Read Dual I/O (BBh)...................................................................................................46
8.2.19 Fast Read Dual I/O with 4-Byte Address (BCh)..................................................................47
8.2.20 Fast Read Quad I/O (EBh) .................................................................................................48
8.2.21 Fast Read Quad I/O with 4-Byte Address (ECh) ................................................................49
8.2.22 Page Program (02h)...........................................................................................................50
Publication Release Date: December 08. 2017
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- Revision B
W25Q256JW
8.2.23 Page Program with 4-Byte Address (12h) ..........................................................................51
8.2.24 Quad Input Page Program (32h) ........................................................................................52
8.2.25 Quad Input Page Program with 4-Byte Address (34h) .......................................................53
8.2.26 Sector Erase (20h) .............................................................................................................54
8.2.27 Sector Erase with 4-Byte Address (21h).............................................................................55
8.2.28 32KB Block Erase (52h) .....................................................................................................56
8.2.29 64KB Block Erase (D8h).....................................................................................................57
8.2.30 64KB Block Erase with 4-Byte Address (DCh) ...................................................................58
8.2.31 Chip Erase (C7h / 60h).......................................................................................................59
8.2.32 Erase / Program Suspend (75h).........................................................................................60
8.2.33 Erase / Program Resume (7Ah) .........................................................................................61
8.2.34 Power-down (B9h)..............................................................................................................62
8.2.35 Release Power-down / Device ID (ABh).............................................................................63
8.2.36 Read Manufacturer / Device ID (90h).................................................................................64
8.2.37 Read Manufacturer / Device ID Dual I/O (92h)...................................................................65
8.2.38 Read Manufacturer / Device ID Quad I/O (94h) .................................................................66
8.2.39 Read Unique ID Number (4Bh)...........................................................................................67
8.2.40 Read JEDEC ID (9Fh) ........................................................................................................68
8.2.41 Read SFDP Register (5Ah) ................................................................................................69
8.2.42 Erase Security Registers (44h)...........................................................................................70
8.2.43 Program Security Registers (42h) ......................................................................................71
8.2.44 Read Security Registers (48h) ...........................................................................................72
8.2.45 Individual Block/Sector Lock (36h) .....................................................................................73
8.2.46 Individual Block/Sector Unlock (39h)..................................................................................74
8.2.47 Read Block/Sector Lock (3Dh) ...........................................................................................75
8.2.48 Global Block/Sector Lock (7Eh)..........................................................................................76
8.2.49 Global Block/Sector Unlock (98h).......................................................................................76
8.2.50 Enable Reset (66h) and Reset Device (99h)......................................................................77
9.
ELECTRICAL CHARACTERISTICS...............................................................................................78
(1)
9.1
9.2
9.3
Absolute Maximum Ratings
..........................................................................................78
Operating Ranges...............................................................................................................78
Power-up Power-down Timing and Requirements.............................................................79
9.3.1 Power Cycle Requirement....................................................................................................80
DC Electrical Characteristics ..........................................................................................................81
9.4
9.5
9.6
9.7
9.8
9.9
AC Measurement Conditions..............................................................................................82
AC Electrical Characteristics(4,5) .........................................................................................83
AC Electrical Characteristics (cont’d) ..............................................................................84
Serial Output Timing...........................................................................................................85
Serial Input Timing..............................................................................................................85
/WP Timing.........................................................................................................................85
10.
PACKAGE SPECIFICATIONS........................................................................................................86
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W25Q256JW
10.1 16-Pin SOIC 300-mil (Package Code F) ............................................................................86
10.1 8-Pad WSON 6x5-mm (Package Code P).........................................................................87
10.2 8-Pad WSON 8x6-mm (Package Code E).........................................................................88
10.3 24-Ball TFBGA 8x6-mm (Package Code B, 5x5-1 Ball Array) ...........................................89
10.4 24-Ball TFBGA 8x6-mm (Package Code C, 6x4 Ball Array) ..............................................90
10.5 32-Ball WLCSP (Package Code Y, Ball pitch:0.50mm) .....................................................91
10.6 Ordering Information...........................................................................................................92
10.7 Valid Part Numbers and Top Side Marking ........................................................................93
REVISION HISTORY......................................................................................................................94
11.
Publication Release Date: December 08. 2017
- 4 -
- Revision B
W25Q256JW
1. GENERAL DESCRIPTIONS
The W25Q256JW (256M-bit) Serial Flash memory provides a storage solution for systems with limited
space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash
devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP)
and storing voice, text and data. The device operates on a single 1.7V to 1.95V power supply with current
consumption as low as 1µA for power-down. All devices are offered in space-saving packages.
The W25Q256JW array is organized into 131,072 programmable pages of 256-bytes each. Up to 256
bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of
128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The
W25Q256JW has 8,192 erasable sectors and 512 erasable blocks respectively. The small 4KB sectors
allow for greater flexibility in applications that require data and parameter storage.
The W25Q256JW supports the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI: Serial
Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2, and I/O3. SPI clock frequencies of
W25Q256JW of up to 133MHz are supported allowing equivalent clock rates of 266MHz (133MHz x 2) for
Dual I/O and 532MHz (133MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O. These
transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories.
Additionally, the device supports JEDEC standard manufacturer and device ID and SFDP Register, a 64-
bit Unique Serial Number and three 256-bytes Security Registers.
2. FEATURES
New Family of SpiFlash Memories
– W25Q256JW: 256M-bit / 32M-byte
– Standard SPI: CLK, /CS, DI, DO
– Dual SPI: CLK, /CS, IO0, IO1
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
– 3 or 4-Byte Addressing Mode
Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4K/32K/64K-Byte)
– Program 1 to 256 byte per programmable page
– Erase/Program Suspend & Resume
Advanced Security Features
– Software and Hardware Write-Protect
– Power Supply Lock-Down
– Software & Hardware Reset
Highest Performance Serial Flash
– 133MHz Standard/Dual/Quad SPI clocks
– 266/532MHz equivalent Dual/Quad SPI
– 66MB/S continuous data transfer rate
–Min. 100K Program-Erase cycles per sector
– More than 20-year data retention
Low Power, Wide Temperature Range
– Single 1.7V to 1.95V supply
– Special OTP protection
– Top/Bottom, Complement array protection
– Individual Block/Sector array protection
– 64-Bit Unique ID for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Bytes Security Registers with OTP locks
– Volatile & Non-volatile Status Register Bits
Space Efficient Packaging
–<1µA Power-down (typ.)
– -40°C to +85°C operating range
– 8-pad WSON 6x5-mm / 8x6-mm
– 16-pin SOIC 300-mil (additional /RESET pin)
– 24-ball TFBGA 8x6-mm
– 32-ball WLCSP
– Contact Winbond for KGD and other options
Note: Hardware /RESET pin is available on SOIC-16 or TFBGA; please contact Winbond for this package.
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W25Q256JW
3. PACKAGE TYPES AND PIN CONFIGURATIONS
3.1 Pad Configuration 6x5-mm/ 8x6-mm
Top View
/CS
DO (IO1)
/WP (IO2)
GND
1
2
3
4
8
7
6
5
VCC
/HOLD or /RESET
(IO3)
CLK
DI (IO0)
Figure 1a. W25Q256JW Pad Assignments, 8-pad WSON 6x5 & 8x6-mm (Package Code P & E)
3.2 Pad Description WSON 6x5-mm/ 8x6-mm
PAD NO.
PAD NAME
/CS
I/O
I
FUNCTION
1
2
3
4
5
6
Chip Select Input
DO (IO1)
/WP (IO2)
GND
I/O
I/O
Data Output (Data Input Output 1)(1)
Write Protect Input ( Data Input Output 2)(2)
Ground
DI (IO0)
CLK
I/O
I
Data Input (Data Input Output 0)(1)
Serial Clock Input
/HOLD or /RESET
(IO3)
7
8
I/O
Hold or Reset Input (Data Input Output 3)(2)
Power Supply
VCC
Notes:
1. IO0 and IO1 are used for Standard and Dual SPI instructions
2. IO0 – IO3 are used for Quad SPI instructions, /HOLD (or /RESET) function is only available for Standard/Dual SPI.
Publication Release Date: December 08. 2017
- 6 -
- Revision B
W25Q256JW
3.3 Pin Configuration SOIC 300-mil
Figure 1b. W25Q256JW Pin Assignments, 16-pin SOIC 300-mil (Package Code F)
3.4 Pin Description SOIC 300-mil
PIN NO.
PIN NAME
I/O
FUNCTION
/HOLD or
/RESET (IO3)
1
I/O
Hold or Reset Input (Data Input Output 3)(2)
2
3
VCC
/RESET
N/C
Power Supply
I
Reset Input(3)
4
No Connect
5
N/C
No Connect
6
N/C
No Connect
7
/CS
I
Chip Select Input
Data Output (Data Input Output 1)(1)
Write Protect Input (Data Input Output 2)(2)
Ground
8
DO (IO1)
/WP (IO2)
GND
I/O
I/O
9
10
11
12
13
14
15
16
N/C
No Connect
N/C
No Connect
N/C
No Connect
N/C
No Connect
DI (IO0)
CLK
I/O
I
Data Input (Data Input Output 0)(1)
Serial Clock Input
Notes:
1. IO0 and IO1 are used for Standard and Dual SPI instructions.
2. IO0 – IO3 are used for Quad SPI instructions, /HOLD (or /RESET) function is only available for Standard/Dual SPI.
3. The /RESET pin is a dedicated hardware reset pin regardless of device settings or operation states. If the hardware reset
function is not used, this pin can be left floating or connected to VCC in the system.
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W25Q256JW
3.5 Ball Configuration TFBGA 8x6-mm (5x5 or 6x4 Ball Array)
Top View Top View
A1
NC
A2
NC
A3
NC
A4
A2
NC
A3
NC
A4
A5
NC
/RESET
/RESET
B1
NC
B2
B3
B4
B1
NC
B2
B3
B4
B5
NC
CLK
GND
VCC
CLK
GND
VCC
C1
NC
C2
C3
NC
C4
C1
NC
C2
C3
NC
C4
C5
NC
/CS
/WP (IO2)
/CS
/WP (IO2)
D1
NC
D2
D3
D4
D1
NC
D2
D3
D4
D5
NC
DO(IO1)
DI(IO0) /HOLD(IO3)
DO(IO1)
DI(IO0) /HOLD(IO3)
E1
NC
E2
NC
E3
NC
E4
NC
E1
NC
E2
NC
E3
NC
E4
NC
E5
NC
F1
NC
F2
NC
F3
NC
F4
NC
Package Code B
Package Code C
Figure 1c. W25Q256JW Ball Assignments, 24-ball TFBGA 6x8-mm (Package Code B & C)
3.6 Ball Description TFBGA 8x6-mm
BALL NO.
PIN NAME
/RESET
CLK
I/O
FUNCTION
A4
B2
I
I
Reset Input(3)
Serial Clock Input
Ground
B3
GND
B4
VCC
Power Supply
Chip Select Input
C2
/CS
I
C4
/WP (IO2)
DO (IO1)
DI (IO0)
/HOLD (IO3)
NC
I/O
I/O
I/O
I/O
Write Protect Input (Data Input Output 2)(2)
Data Output (Data Input Output 1)(1)
Data Input (Data Input Output 0)(1)
Hold or Reset Input (Data Input Output 3)(2)
No Connect
D2
D3
D4
Multiple
Notes:
1. IO0 and IO1 are used for Standard and Dual SPI instructions
2. IO0 – IO3 are used for Quad SPI instructions, /HOLD (or /RESET) function is only available for Standard/Dual SPI.
3. The /RESET pin is a dedicated hardware reset pin regardless of device settings or operation states. If the hardware reset
function is not used, this pin can be left floating or connected to VCC in the system
Publication Release Date: December 08. 2017
- 8 -
- Revision B
W25Q256JW
3.7 Ball Configuration WLCSP
Figure 1d. W25Q256JW Ball Assignments, 32-ball WLCSP (Package Code Y)
3.8 Ball Description WLCSP
BALL NO.
PIN NAME
VCC
I/O
FUNCTION
C3
D3
Power Supply
IO3
I/O
I
Data Input Output 3(2)
E3
CLK
Serial Clock Input
F3
DI (IO0)
/CS
I/O
I
Data Input (Data Input Output 0)(1)
Chip Select Input
C4
D4
DO (IO1)
IO2
I/O
I/O
Data Output (Data Input Output 1)(1)
Data Input Output 2(2)
Ground
E4
F4
GND
Multiple
NC
No Connect
Notes:
1. IO0 and IO1 are used for Standard and Dual SPI instructions
2. IO0 – IO3 are used for Quad SPI instructions, /HOLD (or /RESET) function is only available for Standard/Dual SPI.
3.
The /RESET pin is a dedicated hardware reset pin regardless of device settings or operation states.
If the hardware reset function is not used, this pin can be left floating or connected to VCC in the system
- 9 -
W25Q256JW
4.
PIN DESCRIPTIONS
4.1 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is
deselected and the Serial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When
deselected, the devices power consumption will be at standby levels unless an internal erase, program or
write status register cycle is in progress. When /CS is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the device.
After power-up, /CS must transition from high to low before a new instruction will be accepted. The /CS
input must track the VCC supply level at power-up and power-down (see “Write Protection” and Figure
58). If needed a pull-up resistor on the /CS pin can be used to accomplish this.
4.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
The W25Q256JW supports standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions
use the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the
rising edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to
read data or status from the device on the falling edge of CLK.
Dual and Quad SPI instructions use the bidirectional IO pins to serially write instructions, addresses or
data to the device on the rising edge of CLK and read data or status from the device on the falling edge of
CLK. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set.
When QE=1, the /WP pin becomes IO2 and the /HOLD pin becomes IO3.
4.3 Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits and Status
Register Protect (SRP) bits, a portion as small as a 4KB sector or the entire memory array can be
hardware protected. The /WP pin is active low.
4.4 HOLD (/HOLD)
The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought low,
while /CS is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored
(don’t care). When /HOLD is brought high, device operation can resume. The /HOLD function can be
useful when multiple devices are sharing the same SPI signals. The /HOLD pin is active low. When the
QE bit of Status Register-2 is set for Quad I/O, the /HOLD pin function is not available since this pin is
used for IO3. See Figure 1a-c for the pin configuration of Quad I/O operation.
4.5 Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI
Operations")
4.6 Reset (/RESET)
A dedicated hardware /RESET pin is available on SOIC-16 and TFBGA packages. When it’s driven low for
a minimum period of ~1µS, this device will terminate any external or internal operations and return to its
power-on state.
Note: Hardware /RESET pin is available on SOIC-16 or TFBGA; please contact Winbond for this package.
Publication Release Date: December 08. 2017
- 10 -
- Revision B
W25Q256JW
5. BLOCK DIAGRAM
SFDP Register
Security Register 1 - 3
000000h
0000FFh
003000h
002000h
001000h
0030FFh
0020FFh
0010FFh
Block Segmentation
01FFFF00h
•
01FF0000h
01FFFFFFh
•
01FF00FFh
xxFF00h
•
xxFFFFh
•
Block 511 (64KB)
Sector 15 (4KB)
Sector 14 (4KB)
Sector 13 (4KB)
xxF000h
xxF0FFh
xxEF00h
•
xxEFFFh
•
xxE000h
xxE0FFh
xxDF00h
•
xxDFFFh
•
xxD000h
xxD0FFh
•
•
•
•
•
•
xx2F00h
•
xx2000h
xx2FFFh
•
xx20FFh
Sector 2 (4KB)
Sector 1 (4KB)
Sector 0 (4KB)
0100FF00h
•
0100FFFFh
•
xx1F00h
•
xx1000h
xx1FFFh
•
xx10FFh
Block 256 (64KB)
01000000h
010000FFh
xx0F00h
•
xx0FFFh
•
00FFFF00h
•
00FF0000h
00FFFFFFh
•
00FF00FFh
Block 255 (64KB)
xx0000h
xx00FFh
•
•
•
Write Control
Logic
/WP (IO2)
0080FF00h
•
0080FFFFh
•
Block 128 (64KB)
00800000h
008000FFh
Status
Register
007FFF00h
•
007FFFFFh
•
Block 127 (64KB)
007F0000h
007F00FFh
•
•
•
High Voltage
Generators
0000FF00h
•
00000000h
0000FFFFh
•
000000FFh
/HOLD (IO3)
or RESET
Block 0 (64KB)
Page Address
Latch / Counter
CLK
/CS
Beginning
Page Address
Ending
Page Address
SPI
Command &
Control Logic
Column Decode
And 256-Byte Page Buffer
Data
DI (IO0)
DO (IO1)
Byte Address
Latch / Counter
Figure 2. W25Q256JW Serial Flash Memory Block Diagram
- 11 -
W25Q256JW
6. FUNCTIONAL DESCRIPTIONS
6.1 SPI Operations
Power Up
Device Initialization
&
Status Register Refresh
(Non- Volatile Cells)
ADP=0
ADP=1
ADP bit value
3- Byte Address
4- Byte Address
Enable4- Byte (B7h)
Disable 4- Byte (E9h)
Hardware
Reset
SPI Reset
(66 h + 99h)
Standard SPI
Dual SPI
Standard SPI
Dual SPI
Quad SPI
Quad SPI
Figure 3. W25Q256JW Serial Flash Memory Operation Diagram
6.1.1 Standard SPI Instructions
The W25Q256JW is accessed through an SPI compatible bus consisting of four signals: Serial Clock
(CLK), Chip Select (/CS), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI instructions
use the DI input pin to serially write instructions, addresses or data to the device on the rising edge of
CLK. The DO output pin is used to read data or status from the device on the falling edge of CLK.
SPI bus operation Mode 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and
Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and data is
not being transferred to the Serial Flash. For Mode 0, the CLK signal is normally low on the falling and
rising edges of /CS. For Mode 3, the CLK signal is normally high on the falling and rising edges of /CS.
6.1.2 Dual SPI Instructions
The W25Q256JW supports Dual SPI operation when using instructions such as “Fast Read Dual Output
(3Bh)” and “Fast Read Dual I/O (BBh)”. These instructions allow data to be transferred to or from the
device at two to three times the rate of ordinary Serial Flash devices. The Dual SPI Read instructions are
ideal for quickly downloading code to RAM upon power-up (code-shadowing) or for executing non-speed-
critical code directly from the SPI bus (XIP). When using Dual SPI instructions, the DI and DO pins
become bidirectional I/O pins: IO0 and IO1.
6.1.3 Quad SPI Instructions
The W25Q256JW supports Quad SPI operation when using instructions such as “Fast Read Quad Output
(6Bh)”, “Fast Read Quad I/O (EBh)”. These instructions allow data to be transferred to or from the device
four to six times the rate of ordinary Serial Flash. The Quad Read instructions offer a significant
improvement in continuous and random access transfer rates allowing fast code-shadowing to RAM or
execution directly from the SPI bus (XIP).
.
Publication Release Date: December 08. 2017
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W25Q256JW
6.1.4 3-Byte / 4-Byte Address Modes
The W25Q256JW provides two Address Modes that can be used to specify any byte of data in the
memory array. The 3-Byte Address Mode is backward compatible to older generations of serial flash
memory that only support up to 128M-bit data. To address the 256M-bit or more data in 3-Byte Address
Mode, Extended Address Register must be used in addition to the 3-Byte addresses.
4-Byte Address Mode is designed to support Serial Flash Memory devices from 256M-bit to 32G-bit. The
extended Address Register is not necessary when the 4-Byte Address Mode is enabled.
Upon power up, the W25Q256JW can operate in either 3-Byte Address Mode or 4-Byte Address Mode,
depending on the Non-Volatile Status Register Bit ADP (S17) setting. If ADP=0, the device will operate in
3-Byte Address Mode; if ADP=1, the device will operate in 4-Byte Address Mode. The factory default value
for ADP is 0.
To switch between the 3-Byte or 4-Byte Address Modes, “Enter 4-Byte Mode (B7h)” or “Exit 4-Byte Mode
(E9h)” instructions must be used. The current address mode is indicated by the Status Register Bit ADS
(S16).
W25Q256JW also supports a set of basic SPI instructions which requires dedicated 4-Byte address
regardless the device Address Mode setting. Please refer to Instruction Set Table 2 for details.
6.1.5 Software Reset & Hardware /RESET pin
The W25Q256JW can be reset to the initial power-on state by a software Reset sequence in SPI mode.
This sequence must include two consecutive commands: Enable Reset (66h) & Reset (99h). If the
command sequence is successfully accepted, the device will take approximately 30uS (tRST) to reset. No
command will be accepted during the reset period.
For the SOIC-16 and TFBGA package, W25Q256JW provides a dedicated /RESET pin. Drive the /RESET
pin low for a minimum period of ~1us (tRESET*) will reset the device to its initial power-on state.
Hardware /RESET pin has the highest priority among all the input signals. Drive /RESET low for a
minimum period of ~1us (tRESET*) will interrupt any on-going external/internal operations, regardless the
status of other SPI signals (/CS, CLK, IOs).
Note:
1.While a faster /RESET pulse (as short as a few hundred nanoseconds) will often reset the device, a
1us minimum pulse is recommended to ensure reliable operation.
2.There is an internal pull-up resistor for the dedicated /RESET pin on the SOIC-16 & TFBGA package. If
the reset function is not used, this pin can be left floating in the system.
- 13 -
W25Q256JW
6.2 Write Protection
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern, the
W25Q256JW provides several means to protect the data from inadvertent writes.
Device resets when VCC is below threshold
Time delay write disable after Power-up
Write enable/disable instructions and automatic write disable after erase or program
Software and Hardware (/WP pin) write protection using Status Registers
Additional Individual Block/Sector Locks for array protection
Write Protection using Power-down instruction
Lock Down write protection for Status Register until the next power-up
One Time Program (OTP) write protection for array and Security Registers using Status Register*
* Note: This feature is available upon special order. Please contact Winbond for details.
Upon power-up or at power-down, the W25Q256JW will maintain a reset condition while VCC is below the
threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 43). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage
exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until
the VCC-min level and tVSL time delay is reached, and it must also track the VCC supply level at power-
down to prevent adverse command sequence. If needed, a pull-up resistor on /CS pin can be used to
accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector
Erase, Block Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a
program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-
disabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting the
Status Register Protect (SRP, SRL) and Block Protect (CMP, TB, BP[3:0]) bits. These settings allow a
portion or the entire memory array to be configured as read only. Used in conjunction with the Write
Protect (/WP) pin, changes to the Status Register can be enabled or disabled under hardware control. See
Status Register section for further information. Additionally, the Power-down instruction offers an extra
level of write protection as all instructions are ignored except for the Release Power-down instruction.
The W25Q256JW also provides another Write Protect method using the Individual Block Locks. Each
64KB block (except the top and bottom blocks, total of 510 blocks) and each 4KB sector within the
top/bottom blocks (total of 32 sectors) are equipped with an Individual Block Lock bit. When the lock bit is
0, the corresponding sector or block can be erased or programmed; when the lock bit is set to 1, Erase or
Program commands issued to the corresponding sector or block will be ignored. When the device is
powered on, all Individual Block Lock bits will be 1, so the entire memory array is protected from
Erase/Program. An “Individual Block Unlock (39h)” instruction must be issued to unlock any specific sector
or block.
The WPS bit in Status Register-3 is used to decide which Write Protect scheme should be used. When
WPS=0 (factory default), the device will only utilize CMP, TB, BP[3:0] bits to protect specific areas of the
array; when WPS=1, the device will utilize the Individual Block Locks for write protection.
Publication Release Date: December 08. 2017
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- Revision B
W25Q256JW
7. STATUS AND CONFIGURATION REGISTERS
Three Status and Configuration Registers are provided for W25Q256JW. The Read Status Register-1/2/3
instructions can be used to provide status on the availability of the flash memory array, whether the device
is write enabled or disabled, the state of write protection, Quad SPI setting, Security Register lock status,
Erase/Program Suspend status, output driver strength, power-up and current Address Mode. The Write
Status Register instruction can be used to configure the device write protection features, Quad SPI setting,
Security Register OTP locks functions, output driver strength and power-up Address Mode. Write access to
the Status Register is controlled by the state of the non-volatile Status Register Lock bits (SRL), the Write
Enable instruction, and during Standard/Dual SPI operations.
7.1 Status Registers
S7
S6
TB
S5
S4
S3
S2
S1
S0
SRP
BP3
BP2
BP1
BP0
WEL BUSY
Status Register Protect
(Volatile/Non-Volatile Writable)
Top/Bottom Protect Bit
(Volatile/Non-Volatile Writable)
Block Protect Bits
(Volatile/Non-Volatile Writable)
Write Enable Latch
(Status-Only)
Erase/Write In Progress
(Status-Only)
Figure 4a. Status Register-1
7.1.1 Erase/Write In Progress (BUSY) – Status Only
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a
Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register or
Erase/Program Security Register instruction. During this time the device will ignore further instructions
except for the Read Status Register and Erase/Program Suspend instruction (see tW, tPP, tSE, tBE, and
tCE in AC Characteristics). When the program, erase or write status/security register instruction has
completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for further instructions.
7.1.2 Write Enable Latch (WEL) – Status Only
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to 1 after executing a
Write Enable Instruction. The WEL status bit is cleared to 0 when the device is write disabled. A write
disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Erase
Security Register and Program Security Register.
- 15 -
W25Q256JW
7.1.3 Block Protect Bits (BP3, BP2, BP1, BP0) – Volatile/Non-Volatile Writable
The Block Protect Bits (BP3, BP2, BP1, BP0) are non-volatile read/write bits in the status register (S5, S4,
S3, and S2) that provide Write Protection control and status. Block Protect bits can be set using the Write
Status Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array can
be protected from Program and Erase instructions (see Status Register Memory Protection table). The
factory default setting for the Block Protection Bits is 0, none of the array protected.
7.1.4 Top/Bottom Block Protect (TB) – Volatile/Non-Volatile Writable
The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP3, BP2, BP1, BP0) protect from
the Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection
table. The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction
depending on the state of the SRP and WEL bits.
7.1.5 Complement Protect (CMP) – Volatile/Non-Volatile Writable
The Complement Protect bit (CMP) is a non-volatile read/write bit in the status register (S14). It is used in
conjunction with TB, BP3, BP2, BP1 and BP0 bits to provide more flexibility for the array protection. Once
CMP is set to 1, previous array protection set by TB, BP3, BP2, BP1 and BP0 will be reversed. For
instance, when CMP=0, a top 64KB block can be protected while the rest of the array is not; when
CMP=1, the top 64KB block will become unprotected while the rest of the array become read-only. Please
refer to the Status Register Memory Protection table for details. The default setting is CMP=0.
Publication Release Date: December 08. 2017
- 16 -
- Revision B
W25Q256JW
7.1.1
Status Register Protect (SRP, SRL) – Volatile/Non-Volatile Writable
Three Status and Configuration Registers are provided for W25Q256JW. The Read Status Register-1/2/3
instructions can be used to provide status on the availability of the flash memory array, whether the device
is write enabled or disabled, the state of write protection, Quad SPI setting, Security Register lock status,
Erase/Program Suspend status, and output driver strength, The Write Status Register instruction can be
used to configure the device write protection features, Quad SPI setting, Security Register OTP locks,
output driver. Write access to the Status Register is controlled by the state of the non-volatile Status
Register Protect bits (SRP, SRL), the Write Enable instruction, and during Standard/Dual SPI operations,
the /WP pin.
Status
Register
SRL
SRP
0
/WP
X
Description
Software
Protection
/WP pin has no control. The Status register can be written to
after a Write Enable instruction, WEL=1. [Factory Default]
0
0
0
1
1
Hardware
Protected
When /WP pin is low the Status Register locked and cannot be
written to.
1
0
Hardware
Unprotected
When /WP pin is high the Status register is unlocked and can
be written to after a Write Enable instruction, WEL=1.
1
1
Power Supply Status Register is protected and cannot be written to again until
Lock-Down
X
X
the next power-down, power-up cycle.(1)
Status Register is permanently protected and cannot be written
to. (enabled by adding prefix command AAh, 55h)
One Time
Program(2)
X
X
1. When SRL =1, a power-down, power-up cycle will change SRL =0 state.
2. Please contact Winbond for details regarding the special instruction sequence.
- 17 -
W25Q256JW
S15
S14
S13
LB3
S12
LB2
S11
LB1
S10
(R)
S9
S8
SUS
CMP
QE
SRL
Suspend Status
(Status-Only)
Complement Protect
(Volatile/Non-Volatile Writable)
Security Register Lock Bits
(Volatile/Non-Volatile OTP Writable)
Reserved
Quad Enable
(Volatile/Non-Volatile Writable)
Status Register Protect 1
(Volatile/Non-Volatile Writable)
Figure 4b. Status Register-2
7.1.2 Erase/Program Suspend Status (SUS) – Status Only
The Suspend Status bit is a read only bit in the status register (S15) that is set to 1 after executing a
Erase/Program Suspend (75h) instruction. The SUS status bit is cleared to 0 by Erase/Program Resume
(7Ah) instruction as well as a power-down, power-up cycle.
7.1.3 Security Register Lock Bits (LB3, LB2, LB1) – Volatile/Non-Volatile OTP Writable
The Security Register Lock Bits (LB3, LB2, LB1) are non-volatile One Time Program (OTP) bits in Status
Register (S13, S12, S11) that provide the write protect control and status to the Security Registers. The
default state of LB3-1 is 0, Security Registers are unlocked. LB3-1 can be set to 1 individually using the
Write Status Register instruction. LB3-1 are One Time Programmable (OTP), once it’s set to 1, the
corresponding 256-Byte Security Register will become read-only permanently.
7.1.4
Quad Enable (QE) – Volatile/Non-Volatile Writable
The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that enables Quad SPI
operation. When the QE bit is set to a 0 state (factory default for part numbers with ordering options “IM”),
the /HOLD are enabled, the device operates in Standard/Dual SPI modes. When the QE bit is set to a 1
(factory fixed default for part numbers with ordering options “IQ”), the Quad IO2 and IO3 pins are enabled,
and /HOLD function is disabled, the device operates in Standard/Dual/Quad SPI modes.
Publication Release Date: December 08. 2017
- 18 -
- Revision B
W25Q256JW
S23
(R)
S22
S21
S20
(R)
S19
(R)
S18
S17
S16
DRV1 DRV0
WPS ADP
ADS
Reserved
Output Driver Strength
(Volatile/Non-Volatile Writable)
Reserved
Write Protect Selection
(Volatile/Non-Volatile Writable)
Power Up Address Mode
(Non-Volatile Writable)
Current Address Mode
(Status-Only)
Figure 4c. Status Register-3
7.1.5 Current Address Mode (ADS) – Status Only
The Current Address Mode bit is a read only bit in the Status Register-3 that indicates which address
mode the device is currently operating in. When ADS=0, the device is in the 3-Byte Address Mode, when
ADS=1, the device is in the 4-Byte Address Mode.
7.1.6 Power-Up Address Mode (ADP) – Non-Volatile Writable
The ADP bit is a non-volatile bit that determines the initial address mode when the device is powered on
or reset. This bit is only used during the power on or device reset initialization period, and it is only writable
by the non-volatile Write Status sequence (06h + 11h). When ADP=0 (factory default), the device will
power up into 3-Byte Address Mode, the Extended Address Register must be used to access memory
regions beyond 128Mb. When ADP=1, the device will power up into 4-Byte Address Mode directly.
7.1.7 Write Protect Selection (WPS) – Volatile/Non-Volatile Writable
The WPS bit is used to select which Write Protect scheme should be used. When WPS=0, the device will
use the combination of CMP, TB, BP[3:0] bits to protect a specific area of the memory array. When
WPS=1, the device will utilize the Individual Block Locks to protect any individual sector or blocks. The
default value for all Individual Block Lock bits is 1 upon device power on or after reset.
- 19 -
W25Q256JW
7.1.8 Output Driver Strength (DRV1, DRV0) – Volatile/Non-Volatile Writable
The DRV1 & DRV0 bits are used to determine the output driver strength for the Read operations.
DRV1, DRV0
Driver Strength
0, 0
0, 1
1, 0
1, 1
100%
75%
50%
25% (default setting)
7.1.9 Reserved Bits – Non Functional
There are a few reserved Status Register bits that may be read out as a “0” or “1”. It is recommended to
ignore the values of those bits. During a “Write Status Register” instruction, the Reserved Bits can be
written as “0”, but there will not be any effects.
Publication Release Date: December 08. 2017
- 20 -
- Revision B
W25Q256JW
7.1.10 W25Q256JW Status Register Memory Protection (WPS = 0, CMP = 0)
STATUS REGISTER(1)
W25Q256JW (256M-BIT / 32M-BYTE) MEMORY PROTECTION(2)
PROTECTED
BLOCK(S)
PROTECTED
ADDRESSES
PROTECTED
DENSITY
PROTECTED
PORTION
TB
BP3
BP2
BP1
BP0
X
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
X
X
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
1
1
1
1
0
0
1
X
0
0
1
1
0
0
1
1
0
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
0
1
0
1
0
1
1
0
1
0
1
0
1
0
1
X
X
NONE
511
NONE
NONE
64KB
128KB
256KB
512KB
1MB
NONE
Upper 1/512
Upper 1/256
Upper 1/128
Upper 1/64
Upper 1/32
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
Lower 1/512
Lower 1/256
Lower 1/128
Lower 1/64
Lower 1/32
Lower 1/16
Lower 1/8
Lower 1/4
Lower 1/2
ALL
01FF0000h - 01FFFFFFh
01FE0000h - 01FFFFFFh
01FC0000h - 01FFFFFFh
01F80000h - 01FFFFFFh
01F00000h - 01FFFFFFh
01E00000h - 01FFFFFFh
01C00000h - 01FFFFFFh
01800000h - 01FFFFFFh
01000000h - 01FFFFFFh
00000000h - 0000FFFFh
00000000h - 0001FFFFh
00000000h - 0003FFFFh
00000000h - 0007FFFFh
00000000h - 000FFFFFh
00000000h - 001FFFFFh
00000000h - 003FFFFFh
00000000h - 007FFFFFh
00000000h - 00FFFFFFh
00000000h - 01FFFFFFh
00000000h - 01FFFFFFh
510 thru 511
508 thru 511
504 thru 511
496 thru 511
480 thru 511
448 thru 511
384 thru 511
256 thru 511
0
2MB
4MB
8MB
16MB
64KB
128KB
256KB
512KB
1MB
0 thru 1
0 thru 3
0 thru 7
0 thru 15
0 thru 31
2MB
0 thru 63
4MB
0 thru 127
0 thru 255
0 thru 511
0 thru 511
8MB
16MB
32MB
32MB
ALL
Notes:
1. X = don’t care
2. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be
ignored.
- 21 -
W25Q256JW
7.1.11 W25Q256JW Status Register Memory Protection (WPS = 0, CMP = 1)
STATUS REGISTER(1)
W25Q256JW (256M-BIT / 32M-BYTE) MEMORY PROTECTION(2)
PROTECTED
BLOCK(S)
PROTECTED
ADDRESSES
PROTECTED
DENSITY
PROTECTED
PORTION
TB
BP3
BP2
BP1
BP0
X
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
X
X
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
1
1
1
1
0
0
1
X
0
0
1
1
0
0
1
1
0
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
0
1
0
1
0
1
1
0
1
0
1
0
1
0
1
X
X
ALL
00000000h - 01FFFFFFh
00000000h - 01FEFFFFh
00000000h - 01FDFFFFh
00000000h - 01FBFFFFh
00000000h - 01F7FFFFh
00000000h - 01EFFFFFh
00000000h - 01DFFFFFh
00000000h - 01BFFFFFh
00000000h - 017FFFFFh
00000000h - 00FFFFFFh
00010000h - 01FFFFFFh
00020000h - 01FFFFFFh
00040000h - 01FFFFFFh
00080000h - 01FFFFFFh
00100000h - 01FFFFFFh
00200000h - 01FFFFFFh
00400000h - 01FFFFFFh
00800000h - 01FFFFFFh
01000000h - 01FFFFFFh
NONE
ALL
32,704KB
32,640KB
32,512KB
32,256KB
31MB
ALL
0 thru 510
0 thru 509
0 thru 507
0 thru 503
0 thru 495
0 thru 479
0 thru 447
0 thru 383
0 thru 255
1 thru 511
2 thru 511
4 thru 511
8 thru 511
16 thru 511
32 thru 511
64 thru 511
128 thru 511
256 thru 511
NONE
Lower 511/512
Lower 255/256
Lower 127/128
Lower 63/64
Lower 31/32
Lower 15/16
Lower 7/8
30MB
28MB
24MB
Lower 3/4
16MB
Lower 1/2
32,704KB
32,640KB
32,512KB
32,256KB
31MB
Upper 511/512
Upper 255/256
Upper 127/128
Upper 63/64
Upper 31/32
Upper 15/16
Upper 7/8
30MB
28MB
24MB
Upper 3/4
16MB
Upper 1/2
NONE
NONE
NONE
NONE
NONE
NONE
Notes:
1. X = don’t care
2. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be
ignored.
Publication Release Date: December 08. 2017
- 22 -
- Revision B
W25Q256JW
7.1.12 W25Q256JW Individual Block Memory Protection (WPS=1)
Sector 15 (4KB)
Sector 14 (4KB)
Sector 1 (4KB)
Sector 0 (4KB)
Individual Block Locks:
32 Sectors (Top/Bottom)
510 Blocks
Block 510 (64KB)
Individual Block Lock:
36h + Address
Individual Block Unlock:
39h + Address
Read Block Lock:
3Dh + Address
Global Block Lock:
7Eh
Block 1 (64KB)
Global Block Unlock:
98h
Sector 15 (4KB)
Sector 14 (4KB)
Sector 1 (4KB)
Sector 0 (4KB)
Figure 4d. Individual Block/Sector Locks
Notes:
1. Individual Block/Sector protection is only valid when WPS=1.
2. All individual block/sector lock bits are set to 1 by default after power up, all memory array is protected.
- 23 -
W25Q256JW
7.2 Extended Address Register – Volatile Writable Only
In addition to the Status Registers, W25Q256JW provides a volatile Extended Address Register which
consists of the 4th byte of memory address. The Extended Address Register is used only when the device
is operating in the 3-Byte Address Mode (ADS=0). The lower 128Mb memory array (00000000h –
00FFFFFFh) is selected when A24=0, all instructions with 3-Byte addresses will be executed within that
region. When A24=1, the upper 128Mb memory array (01000000h – 01FFFFFFh) will be selected.
If the device powers up with ADP bit set to 1, or an “Enter 4-Byte Address Mode (B7h)” instruction is
issued, the device will require 4-Byte address input for all address related instructions, and the Extended
Address Register setting will be ignored. However, any command with 4-byte address input will replace
the Extended Address Register Bits (A31-A24) with new settings.
Upon power up or after the execution of a Software/Hardware Reset, the Extended Address Register
values will be cleared to 0.
EA7
A31
EA6
A30
EA5
A29
EA4
A28
EA3
A27
EA2
A26
EA1
A25
EA0
A24
Reserved
for higher densities
512Mb ~ 32Gb
(Volatile Writable Only)
Address Bit #24
A24=0: Select lower 128Mb
A24=1: Select upper 128Mb
(Volatile Writable Only)
Figure 4e. Extended Address Register
Publication Release Date: December 08. 2017
- Revision B
- 24 -
W25Q256JW
8. INSTRUCTIONS
The Standard/Dual/Quad SPI instruction set of the W25Q256JW consists of 48 basic instructions that are
fully controlled through the SPI bus (see Instruction Set Table1-4). Instructions are initiated with the falling
edge of Chip Select (/CS). The first byte of data clocked into the DI input provides the instruction code.
Data on the DI input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in Figures 5
through 57. All read instructions can be completed after any clocked bit. However, all instructions that
Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been
clocked) otherwise the instruction will be ignored. This feature further protects the device from inadvertent
writes. Additionally, while the memory is being programmed or erased, or when the Status Register is
being written, all instructions except for Read Status Register will be ignored until the program or erase
cycle has completed.
8.1 Device ID and Instruction Set Tables
8.1.1 Manufacturer and Device Identification
MANUFACTURER ID
(MF7 - MF0)
Winbond Serial Flash
EFh
(ID15 - ID0)
9Fh
Device ID
(ID7 - ID0)
Instruction
ABh, 90h, 92h, 94h
W25Q256JW
W25Q256JW-IM*
18h
18h
6019h
8019h
Note: For DTR, QPI supporting, please refer to W25Q256JW DTR data sheet.
- 25 -
W25Q256JW
8.1.2 Instruction Set Table 1 (Standard/Dual/Quad SPI, 3-Byte Address Mode)(1)
Data Input Output
Byte 1
Byte 2
8
Byte 3
8
Byte 4
8
Byte 5
8
Byte 6
8
Byte 7
8
Number of Clock(1-1-1)
Write Enable
8
06h
50h
04h
Volatile SR Write Enable
Write Disable
Release Power-down
Device ID
ABh
ABh
90h
Dummy
Dummy
Dummy
Dummy
Dummy
00h
(ID7-ID0)(2)
(MF7-MF0)
Manufacturer/Device ID
JEDEC ID
(ID7-ID0)
(UID63-0)
9Fh
4Bh
(MF7-MF0)
Dummy
(ID15-ID8)
Dummy
(ID7-ID0)
Dummy
Read Unique ID
Dummy
Read Data
03h
A23-A16
A15-A8
A7-A0
(D7-D0)
Read Data with 4-Byte Address
13h
A31-A24
A23-A16
A15-A8
A7-A0
(D7-D0)
Fast Read
0Bh
A23-A16
A15-A8
A7-A0
Dummy
(D7-D0)
Fast Read with 4-Byte Address
0Ch
A31-A24
A23-A16
A15-A8
A7-A0
Dummy
(D7-D0)
D7-D0(3)
Page Program
02h
A23-A16
A15-A8
A7-A0
D7-D0
D7-D0(3)
Page Program with 4-Byte Address
12h
A31-A24
A23-A16
A15-A8
A7-A0
D7-D0
Sector Erase (4KB)
20h
21h
A23-A16
A31-A24
A23-A16
A23-A16
A31-A24
A15-A8
A23-A16
A15-A8
A15-A8
A23-A16
A7-A0
A15-A8
A7-A0
A7-A0
A15-A8
Sector Erase (4KB) with 4-Byte Address
Block Erase (32KB)
A7-A0
A7-A0
52h
Block Erase (64KB)
D8h
Block Erase (64KB) with 4-Byte Address
Chip Erase
DCh
C7h/60h
Read Status Register-1
Write Status Register-1(4)
Read Status Register-2
Write Status Register-2
Read Status Register-3
Write Status Register-3
Read Extended Addr. Reg.
Write Extended Addr. Reg.
05h
01h
35h
31h
15h
11h
C8h
C5h
(S7-S0)(2)
(S7-S0)(4)
(S15-S8)(2)
(S15-S8)
(S23-S16)(2)
(S23-S16)
(EA7-EA0)(2)
(EA7-EA0)
Read SFDP Register
5Ah
44h
42h
48h
A23-A16
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
A7-A0
Dummy
(D7-D0)
Erase Security Register(5)
Program Security Register(5)
Read Security Register(5)
D7-D0
D7-D0(3)
(D7-D0)
Dummy
Global Block Lock
7Eh
98h
3Dh
36h
39h
Global Block Unlock
Read Block Lock
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
(L7-L0)
Individual Block Lock
Individual Block Unlock
Erase / Program Suspend
Erase / Program Resume
Power-down
75h
7Ah
B9h
Enter 4-Byte Address Mode
Exit 4-Byte Address Mode
B7h
E9h
Enable Reset
Reset Device
66h
99h
Publication Release Date: December 08. 2017
- Revision B
- 26 -
W25Q256JW
8.1.3 Instruction Set Table 2 (Dual/Quad SPI Instructions,3-Byte Address Mode)
Data Input Output
Byte 1
8
Byte 2
8
Byte 3
8
Byte 4
8
Byte 5
4
Byte 6
4
Byte 7
4
Byte 8
4
Byte 9
4
Byte 10
4
Number of Clock(1-1-2)
Fast Read Dual Output
3Bh
A23-A16
A15-A8
A7-A0
Dummy
Dummy
(D7-D0)(7)
…
Fast Read Dual Output
with 4-Byte Address
(D7-D0)(7)
…
3Ch
A31-A24
A23-A16
A15-A8
A7-A0
Dummy
Dummy
4
4
Number of Clock(1-2-2)
8
4
4
4
4
4
4
4
Mftr./Device ID Dual I/O
Fast Read Dual I/O
92h
A23-A16
A23-A16
A15-A8
A15-A8
00
Dummy(11) (MF7-MF0) (ID7-ID0)
Dummy(11) (D7-D0)
BBh
A7-A0
…
Fast Read Dual I/O
with 4-Byte Address
Dummy(11) (D7-D0)
…
BCh
A31-A24
A23-A16
A15-A8
A7-A0
Number of Clock(1-1-4)
8
8
8
8
2
2
2
2
2
2
Quad Input Page Program
32h
A23-A16
A15-A8
A7-A0
(D7-D0)(9) (D7-D0)(3)
…
Quad Page Program
with 4-Byte Address
34h
A31-A24
A23-A16
A15-A8
A7-A0
D7-D0
…
…
Fast Read Quad Output
6Bh
A23-A16
A15-A8
A7-A0
Dummy
Dummy
Dummy
Dummy
(D7-D0)(9)
Dummy
2
…
Fast Read Quad Output
with 4-Byte Address
6Ch
A31-A24
A23-A16
A15-A8
A7-A0
Dummy
Dummy
Dummy
(D7-D0)(9)
Number of Clock(1-4-4)
8
2
2
2
2
2
2
2
2
Mftr./Device ID Quad I/O
Fast Read Quad I/O
94h
A23-A16
A23-A16
A15-A8
A15-A8
00
Dummy(11)
Dummy(11)
Dummy
Dummy
Dummy (MF7-MF0) (ID7-ID0)
EBh
A7-A0
Dummy
(D7-D0)
…
Fast Read Quad I/O
with 4-Byte Address
ECh
A31-A24
A23-A16
A15-A8
A7-A0f
Dummy(11)
Dummy
Dummy
(D7-D0)
…
- 27 -
W25Q256JW
8.1.4 Instruction Set Table 3 (Standard SPI, 4-Byte Address Mode)(1)
Data Input Output
Byte 1
Byte 2
8
Byte 3
8
Byte 4
8
Byte 5
8
Byte 6
8
Byte 7
8
Number of Clock(1-1-1)
Write Enable
8
06h
50h
04h
Volatile SR Write Enable
Write Disable
Release Power-down
Device ID
ABh
ABh
90h
Dummy
Dummy
Dummy
Dummy
Dummy
00h
(ID7-ID0)(2)
(MF7-MF0)
Manufacturer/Device ID
JEDEC ID
(ID7-ID0)
Dummy
9Fh
4Bh
(MF7-MF0)
Dummy
(ID15-ID8)
Dummy
(ID7-ID0)
Dummy
Read Unique ID
Dummy
(UID63-0)
Read Data
03h
13h
0Bh
0Ch
A31-A24
A31-A24
A31-A24
A31-A24
A23-A16
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
A7-A0
(D7-D0)
(D7-D0)
Dummy
Dummy
Read Data with 4-Byte Address
Fast Read
(D7-D0)
Fast Read with 4-Byte Address
(D7-D0)
Page Program
02h
A31-A24
A23-A16
A15-A8
A7-A0
D7-D0
D7-D0(3)
Page Program with 4-Byte Address
12h
A31-A24
A23-A16
A15-A8
A7-A0
D7-D0
D7-D0(3)
Sector Erase (4KB)
20h
21h
A31-A24
A31-A24
A31-A24
A31-A24
A31-A24
A23-A16
A23-A16
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
A7-A0
A7-A0
Sector Erase (4KB) with 4-Byte Address
Block Erase (32KB)
52h
Block Erase (64KB)
D8h
Block Erase (64KB) with 4-Byte Address
Chip Erase
DCh
C7h/60h
Read Status Register-1
Write Status Register-1(4)
Read Status Register-2
Write Status Register-2
Read Status Register-3
Write Status Register-3
05h
01h
35h
31h
15h
11h
(S7-S0)(2)
(S7-S0)(4)
(S15-S8)(2)
(S15-S8)
(S23-S16)(2)
(S23-S16)
Read Extended Addr. Reg.
Write Extended Addr. Reg.
C8h
C5h
(EA7-EA0)(2)
(EA7-EA0)
Read SFDP Register
5Ah
44h
42h
48h
A23-A16
A31-A24
A31-A24
A31-A24
A15-A8
A23-A16
A23-A16
A23-A16
A7-A0
A15-A8
A15-A8
A15-A8
Dummy
A7-A0
A7-A0
A7-A0
(D7-D0)
Erase Security Register(5)
Program Security Register(5)
Read Security Register(5)
D7-D0
D7-D0(3)
(D7-D0)
Dummy
Global Block Lock
7Eh
98h
3Dh
36h
39h
Global Block Unlock
Read Block Lock
A31-A24
A31-A24
A31-A24
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
(L7-L0)
Individual Block Lock
Individual Block Unlock
Erase / Program Suspend
Erase / Program Resume
Power-down
75h
7Ah
B9h
Enter 4-Byte Address Mode
Exit 4-Byte Address Mode
B7h
E9h
Enable Reset
Reset Device
66h
99h
Publication Release Date: December 08. 2017
- Revision B
- 28 -
W25Q256JW
8.1.5 Instruction Set Table 4 (Dual/Quad SPI Instructions, 4-Byte Address Mode)
Byte9
Data Input Output
Byte 1
8
Byte 2
8
Byte 3
8
Byte 4
8
Byte 5
8
Byte 6
8
Byte 7
4
Byte 8
4
Number of Clock(1-1-2)
Fast Read Dual Output
3Bh
A31-A24
A23-A16
A15-A8
A7-A0
Dummy
(D7-D0,…)(7)
Fast Read Dual Output
with 4-Byte Address
3Ch
A31-A24
A23-A16
A15-A8
A7-A0
Dummy
(D7-D0,…)(7)
Number of Clock(1-2-2)
8
4
4
4
4
4
4
4
Mftr./Device ID Dual I/O
Fast Read Dual I/O
92h
A31-A24
A31-A24
A23-A16
A23-A16
A15-A8
A15-A8
00
Dummy(11) (MF7-MF0)
(ID7-ID0)
BBh
A7-A0
Dummy(11)
(D7-D0)
Fast Read Dual I/O
with 4-Byte Address
BCh
A31-A24
A23-A16
A15-A8
A7-A0
Dummy(11)
(D7-D0)
Number of Clock(1-1-4)
8
8
8
8
8
4
4
4
Quad Input Page Program
32h
A31-A24
A23-A16
A15-A8
A7-A0
(D7-D0)(9)
(D7-D0)(3)..
Quad Page Program
with 4-Byte Address
34h
A31-A24
A23-A16
A15-A8
A7-A0
D7-D0
D7-D0
D7-D0
D7-D0
Fast Read Quad Output
6Bh
A31-A24
A23-A16
A15-A8
A7-A0
Dummy
Dummy
(D7-D0)(9)
Fast Read Quad Output
with 4-Byte Address
Dummy
Dummy
(D7-D0)(9)
6Ch
A31-A24
A23-A16
A15-A8
A7-A0
Number of Clock(1-4-4)
8
2
2
2
2
2
4
2
2
Mftr./Device ID Quad I/O
Fast Read Quad I/O
94h
A31-A24
A31-A24
A23-A16
A23-A16
A15-A8
A15-A8
00
Dummy(11)
Dummy(11)
Dummy
Dummy
(MF7-MF0)
(D7-D0)
(ID7-ID0)
EBh
A7-A0
Fast Read Quad I/O
with 4-Byte Address
ECh
A31-A24
A23-A16
A15-A8
A7-A0
Dummy(11)
Dummy
(D7-D0)
- 29 -
W25Q256JW
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data
output from the device on either 1, 2 or 4 IO pins.
2. The Status Register contents and Device ID will repeat continuously until /CS terminates the instruction.
3. At least one byte of data input is required for Page Program, Quad Page Program and Program Security
Registers, up to 256 bytes of data input. If more than 256 bytes of data are sent to the device, the
addressing will wrap to the beginning of the page and overwrite previously sent data.
4. Write Status Register-1 (01h) can also be used to program Status Register-1&2, see section 8.2.5.
5. Security Register Address:
Security Register 1: A23-16 = 00h; A15-8 = 10h; A7-0 = byte address
Security Register 2: A23-16 = 00h; A15-8 = 20h; A7-0 = byte address
Security Register 3: A23-16 = 00h; A15-8 = 30h; A7-0 = byte address
6. Dual SPI address input format:
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
7. Dual SPI data output format:
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
8. Quad SPI address input format:
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
9. Quad SPI data input/output format:
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
10. Fast Read Quad I/O data output format:
IO0 = (x, x, x, x, D4, D0, D4, D0)
IO1 = (x, x, x, x, D5, D1, D5, D1)
IO2 = (x, x, x, x, D6, D2, D6, D2)
IO3 = (x, x, x, x, D7, D3, D7, D3)
11. The first dummy is M7-M0 should be set to Fxh or FFh.
Publication Release Date: December 08. 2017
- 30 -
- Revision B
W25Q256JW
8.2 Instruction Descriptions
8.2.1 Write Enable (06h)
The Write Enable instruction (Figure 5) sets the Write Enable Latch (WEL) bit in the Status Register to a
1. The WEL bit must be set prior to every Page Program, Quad Page Program, Sector Erase, Block
Erase, Chip Erase, Write Status Register and Erase/Program Security Registers instruction. The Write
Enable instruction is entered by driving /CS low, shifting the instruction code “06h” into the Data Input (DI)
pin on the rising edge of CLK, and then driving /CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (06h)
High Impedance
DI
(IO0)
DO
(IO1)
Figure 5. Write Enable Instruction
8.2.2 Write Enable for Volatile Status Register (50h)
The non-volatile Status Register bits described in section 7.1 can also be written to as volatile bits. This
gives more flexibility to change the system configuration and memory protection schemes quickly without
waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-
volatile bits. To write the volatile values into the Status Register bits, the Write Enable for Volatile Status
Register (50h) instruction must be issued prior to a Write Status Register (01h) instruction. Write Enable
for Volatile Status Register instruction (Figure 6) will not set the Write Enable Latch (WEL) bit, it is only
valid for the Write Status Register instruction to change the volatile Status Register bit values.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (50h)
High Impedance
DI
(IO0)
DO
(IO1)
Figure 6. Write Enable for Volatile Status Register Instruction
- 31 -
W25Q256JW
8.2.3 Write Disable (04h)
The Write Disable instruction (Figure 7) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the
DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon
completion of the Write Status Register, Erase/Program Security Registers, Page Program, Quad Page
Program, Sector Erase, Block Erase, Chip Erase and Reset instructions.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (04h)
High Impedance
DI
(IO0)
DO
(IO1)
Figure 7. Write Disable Instruction for SPI Mode
8.2.4 Read Status Register-1 (05h), Status Register-2 (35h) & Status Register-3 (15h)
The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” for Status Register-1, “35h” for Status
Register-2 or “15h” for Status Register-3 into the DI pin on the rising edge of CLK. The status register bits
are then shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown
in Figure 8. Refer to section 7.1 for Status Register descriptions.
The Read Status Register instruction may be used at any time, even while a Program, Erase or Write
Status Register cycle is in progress. This allows the BUSY status bit to be checked to determine when the
cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 8. The instruction is completed by driving /CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
Instruction (05h/35h/15h)
High Impedance
DI
(IO0)
Status Register-1/2/3 out
Status Register-1/2/3 out
DO
(IO1)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
= MSB
*
*
*
Figure 8. Read Status Register Instruction
Publication Release Date: December 08. 2017
- Revision B
- 32 -
W25Q256JW
8.2.5
Write Status Register-1 (01h), Status Register-2 (31h) & Status Register-3 (11h)
The Write Status Register instruction allows the Status Registers to be written. The writable Status
Register bits include: SRP, TB, BP[3:0] in Status Register-1; CMP, LB[3:1], QE, SRL in Status Register-2;,
DRV1, DRV0, WPS & ADP in Status Register-3. All other Status Register bit locations are read-only and
will not be affected by the Write Status Register instruction. LB[3:1] are non-volatile OTP bits, once it is set
to 1, it cannot be cleared to 0.
To write non-volatile Status Register bits, a standard Write Enable (06h) instruction must previously have
been executed for the device to accept the Write Status Register instruction (Status Register bit WEL
must equal 1). Once write enabled, the instruction is entered by driving /CS low, sending the instruction
code “01h/31h/11h”, and then writing the status register data byte as illustrated in Figure 9a & 9b.
To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) instruction must
have been executed prior to the Write Status Register instruction (Status Register bit WEL remains 0).
However, SRL and LB[3:1] cannot be changed from “1” to “0” because of the OTP protection for these
bits. Upon power off or the execution of a Software/Hardware Reset, the volatile Status Register bit values
will be lost, and the non-volatile Status Register bit values will be restored.
During non-volatile Status Register write operation (06h combined with 01h/31h/11h), after /CS is driven
high, the self-timed Write Status Register cycle will commence for a time duration of tW (See AC
Characteristics). While the Write Status Register cycle is in progress, the Read Status Register instruction
may still be accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status
Register cycle and a 0 when the cycle is finished and ready to accept other instructions again. After the
Write Status Register cycle has finished, the Write Enable Latch (WEL) bit in the Status Register will be
cleared to 0.
During volatile Status Register write operation (50h combined with 01h/31h/11h), after /CS is driven high,
the Status Register bits will be refreshed to the new values within the time period of tSHSL2 (See AC
Characteristics). BUSY bit will remain 0 during the Status Register bit refresh period.
Refer to section 7.1 for Status Register descriptions.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Register-1/2/3 in
Mode 3
Mode 0
CLK
Instruction
(01h/31h/11h)
DI
(IO0)
7
6
5
4
3
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
Figure 9a. Write Status Register-1/2/3 Instruction
- 33 -
W25Q256JW
The W25Q256JW is also backward compatible to Winbond’s previous generations of serial flash
memories, in which the Status Register-1&2 can be written using a single “Write Status Register-1 (01h)”
command. To complete the Write Status Register-1&2 instruction, the /CS pin must be driven high after
the sixteenth bit of data that is clocked in as shown in Figure 9c & 9d. If /CS is driven high after the eighth
clock, the Write Status Register-1 (01h) instruction will only program the Status Register-1, the Status
Register-2 will not be affected (Previous generations will clear CMP and QE bits).
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
Mode 3
Mode 0
CLK
Instruction (01h)
Status Register 1 in
Status Register 2 in
DI
(IO0)
7
6
5
4
3
2
1
0
15 14 13 12 11 10
9
8
*
*
High Impedance
DO
(IO1)
= MSB
*
Figure 9c. Write Status Register-1/2 Instruction
Publication Release Date: December 08. 2017
- Revision B
- 34 -
W25Q256JW
8.2.6 Read Extended Address Register (C8h)
When the device is in the 3-Byte Address Mode, the Extended Address Register is used as the 4th
address byte A[31:24] to access memory regions beyond 128Mb. The Read Extended Address Register
instruction is entered by driving /CS low and shifting the instruction code “C8h” into the DI pin on the rising
edge of CLK. The Extended Address Register bits are then shifted out on the DO pin at the falling edge of
CLK with most significant bit (MSB) first as shown in Figure 10.
When the device is in the 4-Byte Address Mode, the Extended Address Register is not used.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
Instruction (C8h)
High Impedance
DI
(IO0)
Extended Addr. Reg. Out
Extended Addr. Reg. Out
DO
(IO1)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
= MSB
*
*
*
Figure 10a. Read Extended Address Register Instruction
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W25Q256JW
8.2.7 Write Extended Address Register (C5h)
The Extended Address Register is a volatile register that stores the 4th byte address (A31-A24) when the
device is operating in the 3-Byte Address Mode (ADS=0). To write the Extended Address Register bits, a
Write Enable (06h) instruction must previously have been executed for the device to accept the Write
Extended Address Register instruction (Status Register bit WEL must equal 1). Once write enabled, the
instruction is entered by driving /CS low, sending the instruction code “C5h”, and then writing the Extended
Address Register data byte as illustrated in Figure 11.
Upon power up or the execution of a Software/Hardware Reset, the Extended Address Register bit values
will be cleared to 0.
The Extended Address Register is only effective when the device is in the 3-Byte Address Mode. When
the device operates in the 4-Byte Address Mode (ADS=1), any command with address input of A31-A24
will replace the Extended Address Register values. It is recommended to check and update the Extended
Address Register if necessary when the device is switched from 4-Byte to 3-Byte Address Mode.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Ext. Add. Reg in
Mode 3
Mode 0
CLK
Instruction (C5h)
DI
(IO0)
7
6
5
4
3
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
Figure 11. Write Extended Address Register Instruction
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- Revision B
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8.2.8 Enter 4-Byte Address Mode (B7h)
The Enter 4-Byte Address Mode instruction (Figure 12) will allow 32-bit address (A31-A0) to be used to
access the memory array beyond 128Mb. The Enter 4-Byte Address Mode instruction is entered by driving
/CS low, shifting the instruction code “B7h” into the DI pin and then driving /CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (B7h)
High Impedance
DI
(IO0)
DO
(IO1)
Figure 12. Enter 4-Byte Address Mode instruction
8.2.9 Exit 4-Byte Address Mode (E9h)
In order to be backward compatible, the Exit 4-Byte Address Mode instruction (Figure 13) will only allow
24-bit address (A23-A0) to be used to access the memory array up to 128Mb. The Extended Address
Register must be used to access the memory array beyond 128Mb. The Exit 4-Byte Address Mode
instruction is entered by driving /CS low, shifting the instruction code “E9h” into the DI pin and then driving
/CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (E9h)
High Impedance
DI
(IO0)
DO
(IO1)
Figure 13. Exit 4-Byte Address Mode instruction
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W25Q256JW
8.2.10 Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by a
32/24-bit address (A31/A23-A0) into the DI pin, no matter in 3-byte address mode or 4-byte address
mode. The code and address bits are latched on the rising edge of the CLK pin. After the address is
received, the data byte of the addressed memory location will be shifted out on the DO pin at the falling
edge of CLK with most significant bit (MSB) first. The address is automatically incremented to the next
higher address after each byte of data is shifted out allowing for a continuous stream of data. This means
that the entire memory can be accessed with a single instruction as long as the clock continues. The
instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in Figure 14. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR
(see AC Electrical Characteristics).
The Read Data (03h) instruction is only supported in Standard SPI mode.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
CLK
Instruction (03h)
24-Bit Address
DI
(IO0)
23 22 21
3
2
1
0
*
Data Out 1
High Impedance
DO
(IO1)
7
6
5
4
3
2
1
0
7
= MSB
*
*
Figure 14. Read Data Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
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8.2.11 Read Data with 4-Byte Address (13h)
The Read Data with 4-Byte Address instruction is similar to the Read Data (03h) instruction. Instead of 24-
bit address, 32-bit address is needed following the instruction code 13h. No matter the device is operating
in 3-Byte Address Mode or 4-byte Address Mode, the Read Data with 4-Byte Address instruction will
always require 32-bit address to access the entire 256Mb memory.
The Read Data with 4-Byte Address instruction sequence is shown in Figure 15. If this instruction is issued
while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have
any effects on the current cycle. The Read Data with 4-Byte Address instruction allows clock rates from
D.C. to a maximum of fR (see AC Electrical Characteristics).
The Read Data with 4-Byte Address (13h) instruction is only supported in Standard SPI mode.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47
CLK
Instruction (13h)
32-Bit Address
DI
(IO0)
31 30 29
3
2
1
0
*
Data Out 1
High Impedance
DO
(IO1)
7
6
5
4
3
2
1
0
7
= MSB
*
*
Figure 15. Read Data with 4-Byte Address Instruction
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W25Q256JW
8.2.12 Fast Read (0Bh)
The Fast Read instruction is similar to the Read Data instruction except that it can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24/32-bit address as shown in Figure 16. The dummy clocks allow the devices
internal circuits additional time for setting up the initial address. During the dummy clocks the data value
on the DO pin is a “don’t care”.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
CLK
Instruction (0Bh)
24-Bit Address
DI
(IO0)
23 22 21
3
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
CLK
Dummy Clocks
DI
(IO0)
0
Data Out 1
Data Out 2
High Impedance
DO
(IO1)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
*
*
Figure 16. Fast Read Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
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8.2.13 Fast Read with 4-Byte Address (0Ch)
The Fast Read with 4-Byte Address instruction is similar to the Fast Read instruction except that it
requires 32-bit address instead of 24-bit address. No matter the device is operating in 3-Byte Address
Mode or 4-byte Address Mode, the Read Data with 4-Byte Address instruction will always require 32-bit
address to access the entire 256Mb memory.
The Fast Read with 4-Byte Address (0Ch) instruction is only supported in Standard SPI mode.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39
CLK
Instruction (0Ch)
32-Bit Address
DI
(IO0)
31 30 29
3
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
/CS
39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63
CLK
Dummy Clocks
DI
(IO0)
0
Data Out 1
Data Out 2
High Impedance
DO
(IO1)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
*
*
Figure 18. Fast Read with 4-Byte Address Instruction
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W25Q256JW
8.2.14 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except
that data is output on two pins; IO0 and IO1. This allows data to be transferred at twice the rate of standard
SPI devices. The Fast Read Dual Output instruction is ideal for quickly downloading code from Flash to
RAM upon power-up or for applications that cache code-segments to RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24/32-bit address as shown in Figure 19. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks is
“don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the first data out
clock.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
CLK
Instruction (3Bh)
24-Bit Address
DI
(IO0)
23 22 21
3
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
CLK
IO0 switches from
Dummy Clocks
Input to Output
DI
(IO0)
0
6
4
2
0
6
4
5
2
3
0
1
6
4
5
2
3
0
1
6
4
5
2
3
0
1
6
7
High Impedance
DO
(IO1)
7
5
3
1
7
7
7
Data Out 1
Data Out 2
Data Out 3
Data Out 4
*
*
*
*
Figure 19. Fast Read Dual Output Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
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W25Q256JW
8.2.15 Fast Read Dual Output with 4-Byte Address (3Ch)
The Fast Read Dual Output with 4-Byte Address instruction is similar to the Fast Read Dual Output
instruction except that it requires 32-bit address instead of 24-bit address. No matter the device is
operating in 3-Byte Address Mode or 4-byte Address Mode, the Fast Read Dual Output with 4-Byte
Address instruction will always require 32-bit address to access the entire 256Mb memory.
The Fast Read Dual Output with 4-Byte Address (3Ch) instruction is only supported in Standard SPI
mode.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39
CLK
Instruction (3Ch)
32-Bit Address
DI
(IO0)
31 30 29
3
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
/CS
39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63
CLK
IO0 switches from
Dummy Clocks
Input to Output
DI
(IO0)
0
6
4
2
0
6
4
5
2
3
0
1
6
4
5
2
3
0
1
6
4
5
2
3
0
1
6
7
High Impedance
DO
(IO1)
7
5
3
1
7
7
7
Data Out 1
Data Out 2
Data Out 3
Data Out 4
*
*
*
*
Figure 20. Fast Read Dual Output with 4-Byte Address Instruction
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W25Q256JW
8.2.16 Fast Read Quad Output (6Bh)
The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh) instruction
except that data is output on four pins, IO0, IO1, IO2, and IO3. The Quad Enable (QE) bit in Status
Register-2 must be set to 1 before the device will accept the Fast Read Quad Output Instruction. The Fast
Read Quad Output Instruction allows data to be transferred at four times the rate of standard SPI devices.
The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see AC
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24/32-bit
address as shown in Figure 21. The dummy clocks allow the device's internal circuits additional time for
setting up the initial address. The input data during the dummy clocks is “don’t care”. However, the IO pins
should be high-impedance prior to the falling edge of the first data out clock.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
CLK
IO0
Instruction (6Bh)
24-Bit Address
23 22 21
3
2
1
0
*
High Impedance
High Impedance
High Impedance
IO1
IO2
IO3
= MSB
*
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
CLK
IO0 switches from
Dummy Clocks
Input to Output
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
IO0
IO1
IO2
IO3
High Impedance
High Impedance
High Impedance
Byte 1
Byte 2
Byte 3
Byte 4
Figure 21. Fast Read Quad Output Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
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W25Q256JW
8.2.17 Fast Read Quad Output with 4-Byte Address (6Ch)
The Fast Read Quad Output with 4-Byte Address instruction is similar to the Fast Read Quad Output
instruction except that it requires 32-bit address instead of 24-bit address. No matter the device is
operating in 3-Byte Address Mode or 4-byte Address Mode, the Fast Read Quad Output with 4-Byte
Address instruction will always require 32-bit address to access the entire 256Mb memory.
The Fast Read Quad Output with 4-Byte Address (6Ch) instruction is only supported in Standard SPI
mode.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39
CLK
IO0
Instruction (6Ch)
32-Bit Address
31 30 29
3
2
1
0
*
High Impedance
High Impedance
High Impedance
IO1
IO2
IO3
= MSB
*
/CS
39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
CLK
IO0 switches from
Dummy Clocks
Input to Output
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
IO0
IO1
IO2
IO3
High Impedance
High Impedance
High Impedance
Byte 1
Byte 2
Byte 3
Byte 4
Figure 22. Fast Read Quad Output with 4-Byte Address Instruction
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W25Q256JW
8.2.18 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO
pins, IO0 and IO1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to input
the Address bits (A23/A31-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
Similar to the Fast Read Dual Output (3Bh) instruction, the Fast Read Dual I/O instruction can operate at
the highest possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding
four “dummy” clocks after the 24/32-bit address as shown in Figure 23. The dummy clocks allow the
device's internal circuits additional time for setting up the initial address. The input data during the dummy
clocks is “don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the first
data out clock.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
Instruction (BBh)
A23-16
A15-8
A7-0
M7-0
DI
(IO0)
22 20 18 16 14 12 10
8
9
6
7
4
2
0
1
6
4
2
0
1
DO
(IO1)
23 21 19 17 15 13 11
5
3
7
5
3
*
*
= MSB
*
/CS
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
CLK
IOs switch from
Input to Output
DI
(IO0)
0
1
6
4
5
2
0
6
4
5
2
0
1
6
4
5
2
0
1
6
4
5
2
0
1
6
7
DO
(IO1)
7
3
1
7
3
7
3
7
3
*
*
*
*
Byte 1
Byte 2
Byte 3
Byte 4
Figure 23a. Fast Read Dual I/O (M7-M0 should be set to FFh)
32-Bit Address is required when the device is operating in 4-Byte Address Mode
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- Revision B
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8.2.19 Fast Read Dual I/O with 4-Byte Address (BCh)
The Fast Read Dual I/O with 4-Byte Address instruction is similar to the Fast Read Dual I/O instruction
except that it requires 32-bit address instead of 24-bit address. No matter the device is operating in 3-Byte
Address Mode or 4-byte Address Mode, the Fast Read Dual I/O with 4-Byte Address instruction will
always require 32-bit address to access the entire 256Mb memory.
The Fast Read Dual I/O with 4-Byte Address (BCh) instruction is only supported in Standard SPI mode.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
21 22 23 24 25 26 27
CLK
Instruction (BCh)
32-Bit Address
M7-0
DI
(IO0)
30 28 26
4
2
3
0
1
6
4
2
0
1
DO
(IO1)
31 29 27
5
7
5
3
*
*
= MSB
*
/CS
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
CLK
IOs switch from
Input to Output
DI
(IO0)
0
1
6
4
5
2
0
6
4
5
2
0
1
6
4
5
2
0
1
6
4
5
2
0
1
6
7
DO
(IO1)
7
3
1
7
3
7
3
7
3
*
*
*
*
Byte 1
Byte 2
Byte 3
Byte 4
Figure 25a. Fast Read Dual I/O w/ 4-Byte Addr. (M7-M0 shuld set to FFh, SPI Mode only)
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W25Q256JW
8.2.20 Fast Read Quad I/O (EBh)
The Fast Read Quad I/O (EBh) instruction is similar to the Fast Read Dual I/O (BBh) instruction except
that address and data bits are input and output through four pins IO0, IO1, IO2 and IO3 and four Dummy
clocks are required in SPI mode prior to the data output. The Quad I/O dramatically reduces instruction
overhead allowing faster random access for code execution (XIP) directly from the Quad SPI. The Quad
Enable bit (QE) of Status Register-2 must be set to enable the Fast Read Quad I/O Instruction.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
IOs switch from
Input to Output
A23-16
A15-8
A7-0
M7-0
Dummy
Dummy
Instruction (EBh)
20 16 12
21 17 13
8
9
4
0
1
2
3
4
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
IO0
IO1
IO2
IO3
5
6
7
5
6
7
22 18 14 10
23 19 15 11
Byte 1
Byte 2
Byte 3
Figure 26a. Fast Read Quad I/O (M7-M0 should be set to FFh)
32-Bit Address is required when the device is operating in 4-Byte Address Mode
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- Revision B
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W25Q256JW
8.2.21 Fast Read Quad I/O with 4-Byte Address (ECh)
The Fast Read Quad I/O with 4-Byte Address instruction is similar to the Fast Read Dual I/O instruction
except that it requires 32-bit address instead of 24-bit address. No matter the device is operating in 3-Byte
Address Mode or 4-byte Address Mode, the Fast Read Quad I/O with 4-Byte Address instruction will
always require 32-bit address to access the entire 256Mb memory.
The Fast Read Quad I/O with 4-Byte Address (ECh) instruction is only supported in Standard SPI mode.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
14 15 16 17 18 19 20 21 22 23 24 25
CLK
IOs switch from
Input to Output
M7-0
Dummy
Dummy
Instruction (ECh)
32-Bit Address
28 24
29 25
30 26
31 27
4
5
6
7
0
1
2
3
4
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
IO0
IO1
IO2
IO3
5
6
7
Byte 1
Byte 2
Byte 3
Figure 28. Fast Read Quad I/O w/ 4-Byte Addr. (M7-M0 should be set to FFh)
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W25Q256JW
8.2.22 Page Program (02h)
The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed at
previously erased (FFh) memory locations. A Write Enable instruction must be executed before the device
will accept the Page Program Instruction (Status Register bit WEL= 1). The instruction is initiated by
driving the /CS pin low then shifting the instruction code “02h” followed by a 24/32-bit address (A23/A31-
A0) and at least one data byte, into the DI pin. The /CS pin must be held low for the entire length of the
instruction while data is being sent to the device. The Page Program instruction sequence is shown in
Figure 32.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits)
should be set to 0. If the last address byte is not zero, and the number of clocks exceeds the remaining
page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a
partial page) can be programmed without having any effect on other bytes within the same page. One
condition to perform a partial page program is that the number of clocks cannot exceed the remaining
page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the
page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last byte
has been latched. If this is not done the Page Program instruction will not be executed. After /CS is driven
high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC
Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may
still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program
cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register
is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by
the Block Protect (CMP, TB, BP3, BP2, BP1, and BP0) bits or the Individual Block/Sector Locks.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
CLK
Instruction (02h)
24-Bit Address
Data Byte 1
DI
(IO0)
23 22 21
3
2
1
0
7
6
5
4
3
2
1
0
*
*
= MSB
*
/CS
39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
Mode 3
Mode 0
CLK
Data Byte 2
Data Byte 3
Data Byte 256
DI
(IO0)
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
*
*
*
Figure 32. Page Program Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
- 50 -
W25Q256JW
8.2.23 Page Program with 4-Byte Address (12h)
The Page Program with 4-Byte Address instruction is similar to the Page Program instruction except that it
requires 32-bit address instead of 24-bit address. No matter the device is operating in 3-Byte Address
Mode or 4-byte Address Mode, the Page Program with 4-Byte Address instruction will always require 32-
bit address to access the entire 256Mb memory.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39 40 41 42 43 44 45 46 47
CLK
Instruction (12h)
32-Bit Address
Data Byte 1
DI
(IO0)
31 30 29
3
2
1
0
7
6
5
4
3
2
1
0
*
*
= MSB
*
/CS
47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63
Mode 3
Mode 0
CLK
Data Byte 2
Data Byte 3
Data Byte 256
DI
(IO0)
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
*
*
*
Figure 33. Page Program with 4-Byte Addr.
- 51 -
W25Q256JW
8.2.24 Quad Input Page Program (32h)
The Quad Page Program instruction allows up to 256 bytes of data to be programmed at previously
erased (FFh) memory locations using four pins: IO0, IO1, IO2, and IO3. The Quad Page Program can
improve performance for PROM Programmer and applications that have slow clock speeds <5MHz.
Systems with faster clock speed will not realize much benefit for the Quad Page Program instruction since
the inherent page program time is much greater than the time it take to clock-in the data.
To use Quad Page Program the Quad Enable (QE) bit in Status Register-2 must be set to 1. A Write
Enable instruction must be executed before the device will accept the Quad Page Program instruction
(Status Register-1, WEL=1). The instruction is initiated by driving the /CS pin low then shifting the
instruction code “32h” followed by a 24/32-bit address (A23/A31-A0) and at least one data byte, into the IO
pins. The /CS pin must be held low for the entire length of the instruction while data is being sent to the
device. All other functions of Quad Page Program are identical to standard Page Program. The Quad
Page Program instruction sequence is shown in Figure 34.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
CLK
IO0
Instruction (32h)
24-Bit Address
23 22 21
3
2
1
0
*
IO1
IO2
IO3
= MSB
*
/CS
31 32 33 34 35 36 37
Mode 3
Mode 0
CLK
Byte
253
Byte
254
Byte
255
Byte
256
Byte 1
Byte 2
Byte 3
0
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
0
1
2
3
4
5
6
0
1
2
3
4
0
1
2
3
4
0
1
2
3
IO0
IO1
IO2
IO3
5
6
5
6
5
6
7
7
7
7
7
7
7
*
*
*
*
*
*
*
Figure 34. Quad Input Page Program Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
- 52 -
W25Q256JW
8.2.25 Quad Input Page Program with 4-Byte Address (34h)
The Quad Input Page Program with 4-Byte Address instruction is similar to the Quad Input Page Program
instruction except that it requires 32-bit address instead of 24-bit address. No matter the device is
operating in 3-Byte Address Mode or 4-byte Address Mode, the Quad Input Page Program with 4-Byte
Address instruction will always require 32-bit address to access the entire 256Mb memory.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
36 37 38 39
CLK
IO0
Instruction (34h)
32-Bit Address
31 30 29
3
2
1
0
*
IO1
IO2
IO3
= MSB
*
/CS
39 40 41 42 43 44 45
Mode 3
Mode 0
CLK
Byte
253
Byte
254
Byte
255
Byte
256
Byte 1
Byte 2
Byte 3
0
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
0
1
2
3
4
5
6
0
1
2
3
4
0
1
2
3
4
0
1
2
3
IO0
IO1
IO2
IO3
5
6
5
6
5
6
7
7
7
7
7
7
7
*
*
*
*
*
*
*
Figure 35. Quad Input Page Program with 4-Byte Addr.
- 53 -
W25Q256JW
8.2.26 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24/32-bit sector address (A23/A31-A0). The Sector
Erase instruction sequence is shown in Figure 36.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, TB, BP3,
BP2, BP1, and BP0) bits or the Individual Block/Sector Locks.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
29 30 31
Mode 3
Mode 0
CLK
Instruction (20h)
24-Bit Address
DI
(IO0)
23 22
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
Figure 36. Sector Erase Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
- 54 -
W25Q256JW
8.2.27 Sector Erase with 4-Byte Address (21h)
The Sector Erase with 4-Byte Address instruction is similar to the Sector Erase instruction except that it
requires 32-bit address instead of 24-bit address. No matter the device is operating in 3-Byte Address
Mode or 4-byte Address Mode, the Sector Erase with 4-Byte Address instruction will always require 32-bit
address to access the entire 256Mb memory.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
37 38 39
Mode 3
Mode 0
CLK
Instruction (21h)
32-Bit Address
DI
(IO0)
31 30
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
Figure 37. Sector Erase with 4-Byte Address Instruction
- 55 -
W25Q256JW
8.2.28 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “52h” followed a 24/32-bit block address (A23/A31-A0). The Block Erase
instruction sequence is shown in Figure 38.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, TB, BP3, BP2, BP1, and BP0)
bits or the Individual Block/Sector Locks.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
29 30 31
Mode 3
Mode 0
CLK
Instruction (52h)
24-Bit Address
DI
(IO0)
23 22
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
Figure 38a. 32KB Block Erase Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
- 56 -
W25Q256JW
8.2.29 64KB Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “D8h” followed a 24/32-bit block address (A23/A31-A0). The Block Erase
instruction sequence is shown in Figure 33a & 33b.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, TB, BP3, BP2, BP1, and BP0)
bits or the Individual Block/Sector Locks.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
29 30 31
Mode 3
Mode 0
CLK
Instruction (D8h)
24-Bit Address
DI
(IO0)
23 22
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
Figure 39. 64KB Block Erase Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
- 57 -
W25Q256JW
8.2.30 64KB Block Erase with 4-Byte Address (DCh)
The 64KB Block Erase with 4-Byte Address instruction is similar to the 64KB Block Erase instruction
except that it requires 32-bit address instead of 24-bit address. No matter the device is operating in 3-Byte
Address Mode or 4-byte Address Mode, the 64KB Block Erase with 4-Byte Address instruction will always
require 32-bit address to access the entire 256Mb memory.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
37 38 39
Mode 3
Mode 0
CLK
Instruction (DCh)
32-Bit Address
DI
(IO0)
31 30
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
Figure 40. 64KB Block Erase with 4-Byte Address Instruction
Publication Release Date: December 08. 2017
- Revision B
- 58 -
W25Q256JW
8.2.31 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in Figure 41.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The BUSY
bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to accept
other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Chip Erase instruction will not be executed if any memory region is
protected by the Block Protect (CMP, TB, BP3, BP2, BP1, and BP0) bits or the Individual Block/Sector
Locks.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (C7h/60h)
High Impedance
DI
(IO0)
DO
(IO1)
Figure 41. Chip Erase Instruction Sequence Diagram
- 59 -
W25Q256JW
8.2.32 Erase / Program Suspend (75h)
The Erase/Program Suspend instruction “75h”, allows the system to interrupt a Sector or Block Erase
operation or a Page Program operation and then read from or program/erase data to, any other sectors or
blocks. The Erase/Program Suspend instruction sequence is shown in Figure 42.
The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h) are not
allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status
Register instruction (01h) and Program instructions (02h, 32h, 42h) are not allowed during Program
Suspend. Program Suspend is valid only during the Page Program or Quad Page Program operation.
The Erase/Program Suspend instruction “75h” will be accepted by the device only if the SUS bit in the
Status Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase or a Page
Program operation is on-going. If the SUS bit equals to 1 or the BUSY bit equals to 0, the Suspend
instruction will be ignored by the device. A maximum of time of “tSUS” (See AC Characteristics) is required
to suspend the erase or program operation. The BUSY bit in the Status Register will be cleared from 1 to
0 within “tSUS” and the SUS bit in the Status Register will be set from 0 to 1 immediately after
Erase/Program Suspend. For a previously resumed Erase/Program operation, it is also required that the
Suspend instruction “75h” is not issued earlier than a minimum of time of “tSUS” following the preceding
Resume instruction “7Ah”.
Unexpected power off during the Erase/Program suspend state will reset the device and release the
suspend state. SUS bit in the Status Register will also reset to 0. The data within the page, sector or block
that was being suspended may become corrupted. It is recommended for the user to implement system
design techniques against the accidental power interruption and preserve data integrity during
erase/program suspend state.
/CS
tSUS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (75h)
High Impedance
DI
(IO0)
DO
(IO1)
Accept instructions
Figure 42. Erase/Program Suspend Instruction
Publication Release Date: December 08. 2017
- Revision B
- 60 -
W25Q256JW
8.2.33 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction “7Ah”
will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY bit
equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set from
0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the
program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah”
will be ignored by the device. The Erase/Program Resume instruction sequence is shown in Figure 43.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “tSUS” following a previous Resume instruction.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (7Ah)
DI
(IO0)
Resume previously
suspended Program or
Erase
Figure 43. Erase/Program Resume Instruction
- 61 -
W25Q256JW
8.2.34 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
Figure 44.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release Power-down
(ABh) instruction, which restores the device to normal operation, will be recognized. All other instructions
are ignored. This includes the Read Status Register instruction, which is always available during normal
operation. Ignoring all but one instruction makes the Power Down state a useful condition for securing
maximum write protection. The device always powers-up in the normal operation with the standby current
of ICC1.
/CS
tDP
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (B9h)
DI
(IO0)
Stand-by current
Power-down current
Figure 44. Deep Power-down Instruction
Publication Release Date: December 08. 2017
- Revision B
- 62 -
W25Q256JW
8.2.35 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, or read the devices electronic identification (ID) number.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in Figure 45. Release from power-down
will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal
operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first. The Device ID
values for the W25Q256JW is listed in Manufacturer and Device Identification table. The Device ID can be
read continuously. The instruction is completed by driving /CS high.
/CS
tRES1
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (ABh)
DI
(IO0)
Power-down current
Stand-by current
Figure 45a. Release Power-down Instruction
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
29
30
31
32
33
34
35
36
37
38
Mode 3
Mode 0
CLK
Instruction (ABh)
3 Dummy Bytes
22
DI
(IO0)
23
2
1
0
Device ID
*
High Impedance
DO
(IO1)
7
6
5
4
3
2
1
0
*
= MSB
*
Figure 45b. Device ID Instruction
- 63 -
W25Q256JW
8.2.36 Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down / Device
ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID
instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “90h”
followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond (EFh)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown
in Figure 46. The Device ID values for the W25Q256JW are listed in Manufacturer and Device
Identification table. The instruction is completed by driving /CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
CLK
Instruction (90h)
Address (000000h)
DI
(IO0)
23 22 21
3
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
Mode 3
Mode 0
CLK
DI
(IO0)
0
DO
(IO1)
7
6
5
4
3
2
1
0
Manufacturer ID (EFh)
Device ID
*
Figure 46. Read Manufacturer / Device ID Instruction
Publication Release Date: December 08. 2017
- Revision B
- 64 -
W25Q256JW
8.2.37 Read Manufacturer / Device ID Dual I/O (92h)
The Read Manufacturer / Device ID Dual I/O instruction is an alternative to the Read Manufacturer /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID
at 2x speed.
The Read Manufacturer / Device ID Dual I/O instruction is similar to the Fast Read Dual I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “92h” followed by a
24/32-bit address (A23/A31-A0) of 000000h, but with the capability to input the Address bits two bits per
clock. After which, the Manufacturer ID for Winbond (EFh) and the Device ID are shifted out 2 bits per
clock on the falling edge of CLK with most significant bits (MSB) first as shown in Figure 47. The Device
ID values for the W25Q256JW are listed in Manufacturer and Device Identification table. The
Manufacturer and Device IDs can be read continuously, alternating from one to the other. The instruction
is completed by driving /CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
A23-16
A15-8
A7-0 (00h)
M7-0
Instruction (92h)
High Impedance
DI
(IO0)
6
4
2
0
1
6
4
2
0
1
6
4
2
0
1
6
4
2
0
1
DO
(IO1)
7
5
3
7
5
3
7
5
3
7
5
3
= MSB
*
*
*
*
*
/CS
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
Mode 3
Mode 0
CLK
IOs switch from
Input to Output
DI
(IO0)
0
1
6
4
5
2
0
6
4
5
2
3
0
1
6
4
5
2
3
0
1
6
4
5
2
3
0
1
DO
(IO1)
7
3
1
7
7
7
MFR ID
(repeat)
Device ID
(repeat)
*
*
*
*
MFR ID
Device ID
Figure 47. Read Manufacturer / Device ID Dual I/O Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Note:
The “Continuous Read Mode” bits M(7-0) must be set to FFh to be compatible with Fast Read Dual I/O instruction.
- 65 -
W25Q256JW
8.2.38 Read Manufacturer / Device ID Quad I/O (94h)
The Read Manufacturer / Device ID Quad I/O instruction is an alternative to the Read Manufacturer /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID
at 4x speed.
The Read Manufacturer / Device ID Quad I/O instruction is similar to the Fast Read Quad I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “94h” followed by a
four clock dummy cycles and then a 24/32-bit address (A23/A31-A0) of 000000h, but with the capability to
input the Address bits four bits per clock. After which, the Manufacturer ID for Winbond (EFh) and the
Device ID are shifted out four bits per clock on the falling edge of CLK with most significant bit (MSB) first
as shown in Figure 48. The Device ID values for the W25Q256JW are listed in Manufacturer and Device
Identification table. The Manufacturer and Device IDs can be read continuously, alternating from one to
the other. The instruction is completed by driving /CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
A7-0
(00h)
IOs switch from
Input to Output
A23-16
A15-8
M7-0
Dummy
Dummy
Instruction (94h)
4
5
6
7
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
IO0
IO1
IO2
IO3
High Impedance
High Impedance
High Impedance
5
6
7
5
6
7
5
6
7
MFR ID Device ID
/CS
23 24 25 26 27 28 29 30
Mode 3
Mode 0
CLK
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
IO0
IO1
IO2
IO3
MFR ID Device ID MFR ID Device ID
(repeat) (repeat) (repeat) (repeat)
Figure 48. Read Manufacturer / Device ID Quad I/O Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Note:
The “Continuous Read Mode” bits M(7-0) must be set to FFh to be compatible with Fast Read Quad I/O instruction.
Publication Release Date: December 08. 2017
- 66 -
- Revision B
W25Q256JW
8.2.39 Read Unique ID Number (4Bh)
The Read Unique ID Number instruction accesses a factory-set read-only 64-bit number that is unique to
each W25Q256JW device. The ID number can be used in conjunction with user software methods to help
prevent copying or cloning of a system. The Read Unique ID instruction is initiated by driving the /CS pin
low and shifting the instruction code “4Bh” followed by a four bytes of dummy clocks. After which, the 64-
bit ID is shifted out on the falling edge of CLK as shown in Figure 49.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
Instruction (4Bh)
Dummy Byte 1
Dummy Byte 2
DI
(IO0)
High Impedance
DO
(IO1)
/CS
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42
Mode 3
Mode 0
CLK
Dummy Byte 3
Dummy Byte 4
DI
(IO0)
High Impedance
DO
(IO1)
63 62 61
2
1
0
= MSB
64-bit Unique Serial Number
*
*
Figure 49. Read Unique ID Number Instruction
5 Dummy Bytes are required when the device is operating in 4-Byte Address Mode
- 67 -
W25Q256JW
8.2.40 Read JEDEC ID (9Fh)
For compatibility reasons, the W25Q256JW provides several instructions to electronically determine the
identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard for SPI
compatible serial memories that was adopted in 2003. The instruction is initiated by driving the /CS pin low
and shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID byte for Winbond (EFh) and
two Device ID bytes, Memory Type (ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the falling
edge of CLK with most significant bit (MSB) first as shown in Figure 50. For memory type and capacity
values refer to Manufacturer and Device Identification table.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
CLK
Instruction (9Fh)
High Impedance
DI
(IO0)
Manufacturer ID (EFh)
DO
(IO1)
= MSB
*
/CS
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Mode 3
Mode 0
CLK
DI
(IO0)
Memory Type ID15-8
Capacity ID7-0
DO
(IO1)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
*
*
Figure 50. Read JEDEC ID Instruction
Publication Release Date: December 08. 2017
- Revision B
- 68 -
W25Q256JW
8.2.41 Read SFDP Register (5Ah)
The W25Q256JW features a 256-Byte Serial Flash Discoverable Parameter (SFDP) register that contains
information about device configurations, available instructions and other features. The SFDP parameters
are stored in one or more Parameter Identification (PID) tables. Currently only one PID table is specified,
but more may be added in the future. The Read SFDP Register instruction is compatible with the SFDP
standard initially established in 2010 for PC and other applications, as well as the JEDEC standard
JESD216 that is published in 2011. Most Winbond SpiFlash Memories shipped after June 2011 (date
code 1124 and beyond) support the SFDP feature as specified in the applicable datasheet.
The Read SFDP instruction is initiated by driving the /CS pin low and shifting the instruction code “5Ah”
followed by a 24-bit address (A23-A0)(1) into the DI pin. Eight “dummy” clocks are also required before the
SFDP register contents are shifted out on the falling edge of the 40th CLK with most significant bit (MSB)
first as shown in Figure 51. For SFDP register values and descriptions, please refer to the Winbond
Application Note for SFDP Definition Table.
Note: 1. A23-A8 = 0; A7-A0 are used to define the starting byte address for the 256-Byte SFDP Register.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
CLK
Instruction (5Ah)
24-Bit Address
DI
(IO0)
23 22 21
3
2
1
0
*
High Impedance
DO
(IO1)
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
CLK
Dummy Byte
DI
(IO0)
0
7
6
5
4
3
2
1
0
Data Out 1
Data Out 2
High Impedance
DO
(IO1)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
= MSB
*
*
*
Figure 51. Read SFDP Register Instruction Sequence Diagram
Only 24-Bit Address is required when the device is operating in either 3-Byte or 4-Byte Address Mode
- 69 -
W25Q256JW
8.2.42 Erase Security Registers (44h)
The W25Q256JW offers three 256-byte Security Registers which can be erased and programmed
individually. These registers may be used by the system manufacturers to store security and other
important information separately from the main memory array.
The Erase Security Register instruction is similar to the Sector Erase instruction. A Write Enable
instruction must be executed before the device will accept the Erase Security Register Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “44h” followed by a 24/32-bit address (A23/A31-A0) to erase one of the three security
registers.
ADDRESS
{A23/A31}-16
00h/0000h
00h/0000h
00h/0000h
A15-12
0 0 0 1
0 0 1 0
0 0 1 1
A11-8
0 0 0 0
0 0 0 0
0 0 0 0
A7-0
Security Register #1
Security Register #2
Security Register #3
Don’t Care
Don’t Care
Don’t Care
The Erase Security Register instruction sequence is shown in Figure 52. The /CS pin must be driven high
after the eighth bit of the last byte has been latched. If this is not done the instruction will not be executed.
After /CS is driven high, the self-timed Erase Security Register operation will commence for a time
duration of tSE (See AC Characteristics). While the Erase Security Register cycle is in progress, the Read
Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is
a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept
other instructions again. After the Erase Security Register cycle has finished the Write Enable Latch
(WEL) bit in the Status Register is cleared to 0. The Security Register Lock Bits (LB3-1) in the Status
Register-2 can be used to OTP protect the security registers. Once a lock bit is set to 1, the corresponding
security register will be permanently locked, Erase Security Register instruction to that register will be
ignored (Refer to section 7.1.8 for detail descriptions).
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
29 30 31
Mode 3
Mode 0
CLK
Instruction (44h)
24-Bit Address
DI
(IO0)
23 22
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
Figure 52. Erase Security Registers Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
- 70 -
W25Q256JW
8.2.43 Program Security Registers (42h)
The Program Security Register instruction is similar to the Page Program instruction. It allows from one
byte to 256 bytes of security register data to be programmed at previously erased (FFh) memory locations.
A Write Enable instruction must be executed before the device will accept the Program Security Register
Instruction (Status Register bit WEL= 1). The instruction is initiated by driving the /CS pin low then shifting
the instruction code “42h” followed by a 24/32-bit address (A23/A31-A0) and at least one data byte, into
the DI pin. The /CS pin must be held low for the entire length of the instruction while data is being sent to
the device.
ADDRESS
{A23/A31}-16
00h/0000h
00h/0000h
00h/0000h
A15-12
0 0 0 1
0 0 1 0
0 0 1 1
A11-8
0 0 0 0
0 0 0 0
0 0 0 0
A7-0
Security Register #1
Security Register #2
Security Register #3
Byte Address
Byte Address
Byte Address
The Program Security Register instruction sequence is shown in Figure 53. The Security Register Lock
Bits (LB3-1) in the Status Register-2 can be used to OTP protect the security registers. Once a lock bit is
set to 1, the corresponding security register will be permanently locked, Program Security Register
instruction to that register will be ignored (See 7.1.8, 8.2.25 for detail descriptions).
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
CLK
Instruction (42h)
24-Bit Address
Data Byte 1
DI
(IO0)
23 22 21
3
2
1
0
7
6
5
4
3
2
1
0
*
*
= MSB
*
/CS
39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
Mode 3
Mode 0
CLK
Data Byte 2
Data Byte 3
Data Byte 256
DI
(IO0)
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
*
*
*
Figure 53. Program Security Registers Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
- 71 -
W25Q256JW
8.2.44 Read Security Registers (48h)
The Read Security Register instruction is similar to the Fast Read instruction and allows one or more data
bytes to be sequentially read from one of the four security registers. The instruction is initiated by driving
the /CS pin low and then shifting the instruction code “48h” followed by a 24/32-bit address (A23/A31-A0)
and eight “dummy” clocks into the DI pin. The code and address bits are latched on the rising edge of the
CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out
on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The byte address is
automatically incremented to the next byte address after each byte of data is shifted out. Once the byte
address reaches the last byte of the register (byte address FFh), it will reset to address 00h, the first byte
of the register, and continue to increment. The instruction is completed by driving /CS high. The Read
Security Register instruction sequence is shown in Figure 54. If a Read Security Register instruction is
issued while an Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will
not have any effects on the current cycle. The Read Security Register instruction allows clock rates from
D.C. to a maximum of FR (see AC Electrical Characteristics).
ADDRESS
{A23/A31}-16
00h/0000h
00h/0000h
00h/0000h
A15-12
0 0 0 1
0 0 1 0
0 0 1 1
A11-8
0 0 0 0
0 0 0 0
0 0 0 0
A7-0
Security Register #1
Security Register #2
Security Register #3
Byte Address
Byte Address
Byte Address
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
CLK
Instruction (48h)
24-Bit Address
DI
(IO0)
23 22 21
3
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
/CS
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
CLK
Dummy Byte
DI
(IO0)
0
7
6
5
4
3
2
1
0
Data Out 1
Data Out 2
High Impedance
DO
(IO1)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
*
*
Figure 54. Read Security Registers Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
- 72 -
W25Q256JW
8.2.45 Individual Block/Sector Lock (36h)
The Individual Block/Sector Lock provides an alternative way to protect the memory array from adverse
Erase/Program. In order to use the Individual Block/Sector Locks, the WPS bit in Status Register-3 must
be set to 1. If WPS=0, the write protection will be determined by the combination of CMP, TB, BP[3:0] bits
in the Status Registers. The Individual Block/Sector Lock bits are volatile bits. The default values after
device power up or after a Reset are 1, so the entire memory array is being protected.
To lock a specific block or sector as illustrated in Figure 4d, an Individual Block/Sector Lock command
must be issued by driving /CS low, shifting the instruction code “36h” into the Data Input (DI) pin on the
rising edge of CLK, followed by a 24/32-bit address and then driving /CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
29 30 31
Mode 3
Mode 0
CLK
Instruction (36h)
24-Bit Address
DI
(IO0)
23 22
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
Figure 55. Individual Block/Sector Lock Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
- 73 -
W25Q256JW
8.2.46 Individual Block/Sector Unlock (39h)
The Individual Block/Sector Lock provides an alternative way to protect the memory array from adverse
Erase/Program. In order to use the Individual Block/Sector Locks, the WPS bit in Status Register-3 must
be set to 1. If WPS=0, the write protection will be determined by the combination of CMP, TB, BP[3:0] bits
in the Status Registers. The Individual Block/Sector Lock bits are volatile bits. The default values after
device power up or after a Reset are 1, so the entire memory array is being protected.
To unlock a specific block or sector as illustrated in Figure 4d, an Individual Block/Sector Unlock
command must be issued by driving /CS low, shifting the instruction code “39h” into the Data Input (DI) pin
on the rising edge of CLK, followed by a 24/32-bit address and then driving /CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
29 30 31
Mode 3
Mode 0
CLK
Instruction (39h)
24-Bit Address
DI
(IO0)
23 22
2
1
0
*
High Impedance
DO
(IO1)
= MSB
*
Figure 56. Individual Block Unlock Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
Publication Release Date: December 08. 2017
- Revision B
- 74 -
W25Q256JW
8.2.47 Read Block/Sector Lock (3Dh)
The Individual Block/Sector Lock provides an alternative way to protect the memory array from adverse
Erase/Program. In order to use the Individual Block/Sector Locks, the WPS bit in Status Register-3 must
be set to 1. If WPS=0, the write protection will be determined by the combination of CMP, TB, BP[3:0] bits
in the Status Registers. The Individual Block/Sector Lock bits are volatile bits. The default values after
device power up or after a Reset are 1, so the entire memory array is being protected.
To read out the lock bit value of a specific block or sector as illustrated in Figure 4d, a Read Block/Sector
Lock command must be issued by driving /CS low, shifting the instruction code “3Dh” into the Data Input
(DI) pin on the rising edge of CLK, followed by a 24/32-bit address. The Block/Sector Lock bit value will be
shifted out on the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown in Figure
57. If the least significant bit (LSB) is 1, the corresponding block/sector is locked; if LSB=0, the
corresponding block/sector is unlocked, Erase/Program operation can be performed.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
Mode 3
Mode 0
CLK
Instruction (3Dh)
24-Bit Address
DI
(IO0)
23 22 21
3
2
1
0
*
Lock Value Out
High Impedance
DO
(IO1)
X
X
X
X
X
X
X
0
= MSB
*
*
Figure 57. Read Block Lock Instruction
32-Bit Address is required when the device is operating in 4-Byte Address Mode
- 75 -
W25Q256JW
8.2.48 Global Block/Sector Lock (7Eh)
All Block/Sector Lock bits can be set to 1 by the Global Block/Sector Lock instruction. The command must
be issued by driving /CS low, shifting the instruction code “7Eh” into the Data Input (DI) pin on the rising
edge of CLK, and then driving /CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (7Eh)
High Impedance
DI
(IO0)
DO
(IO1)
Figure 58. Global Block Lock Instruction for SPI
8.2.49 Global Block/Sector Unlock (98h)
All Block/Sector Lock bits can be set to 0 by the Global Block/Sector Unlock instruction. The command
must be issued by driving /CS low, shifting the instruction code “98h” into the Data Input (DI) pin on the
rising edge of CLK, and then driving /CS high.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (98h)
High Impedance
DI
(IO0)
DO
(IO1)
Figure 59. Global Block Unlock Instruction
Publication Release Date: December 08. 2017
- Revision B
- 76 -
W25Q256JW
8.2.50 Enable Reset (66h) and Reset Device (99h)
Because of the small package and the limitation on the number of pins, the W25Q256JW provide a
software Reset instruction instead of a dedicated RESET pin. Once the Reset instruction is accepted, any
on-going internal operations will be terminated and the device will return to its default power-on state and
lose all the current volatile settings, such as Volatile Status Register bits, Write Enable Latch (WEL)
status, Program/Erase Suspend status, Read parameter setting (P7-P0), and Continuous Read Mode bit
setting (M7-M0).
“Enable Reset (66h)” and “Reset (99h)” instructions can be issued in SPI. To avoid accidental reset, both
instructions must be issued in sequence. Any other commands other than “Reset (99h)” after the “Enable
Reset (66h)” command will disable the “Reset Enable” state. A new sequence of “Enable Reset (66h)” and
“Reset (99h)” is needed to reset the device. Once the Reset command is accepted by the device, the
device will take approximately tRST=30us to reset. During this period, no command will be accepted.
Data corruption may happen if there is an on-going or suspended internal Erase or Program operation
when Reset command sequence is accepted by the device. It is recommended to check the BUSY bit and
the SUS bit in Status Register before issuing the Reset command sequence.
/CS
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
0
1
2
3
4
5
6
7
Mode 3
Mode 0
CLK
Instruction (66h)
High Impedance
Instruction (99h)
DI
(IO0)
DO
(IO1)
Figure 60. Enable Reset and Reset Instruction Sequence
- 77 -
W25Q256JW
9. ELECTRICAL CHARACTERISTICS
(1)
9.1 Absolute Maximum Ratings
PARAMETERS
Supply Voltage
SYMBOL
VCC
CONDITIONS
RANGE
UNIT
V
–0.6 to +2.5V
Voltage Applied to Any Pin
Transient Voltage on any Pin
VIO
Relative to Ground
–0.6 to VCC+0.4
V
<20nS Transient
Relative to Ground
VIOT
–2.0 to VCC+2.0
V
Storage Temperature
TSTG
TLEAD
VESD
–65 to +150
See Note (2)
°C
°C
V
Lead Temperature
Electrostatic Discharge Voltage
Human Body Model(3)
–2000 to +2000
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the
European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
9.2 Operating Ranges
SPEC
PARAMETER
SYMBOL CONDITIONS
UNIT
MIN
MAX
Supply Voltage(1)
VCC
TA
FR = 133MHz,
Industrial
fR = 50MHz
1.7
1.95
V
Ambient Temperature,
Operating
–40
+85
°C
Note:
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of
the programming (erase/write) voltage.
Publication Release Date: December 08. 2017
- 78 -
- Revision B
W25Q256JW
9.3 Power-up Power-down Timing and Requirements
SPEC
PARAMETER
SYMBOL
UNIT
MIN
20
MAX
VCC (min) to /CS Low
tVSL(1)
tPUW(1)
VWI(1)
µs
ms
V
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
5
1.0
100
1.4
0.8
The minimum duration for ensuring tPWD(1)
initialization will occur
µs
VCC voltage needed to below VPWD for VPWD(1)
ensuring initialization will occur
V
Note:
1. These parameters are characterized only.
VCC
VCC (max)
Program, Erase and Write Instructions are ignored
/CS must track VCC
VCC (min)
VWI
Read Instructions
Allowed
Device is fully
Accessible
tVSL
Reset
State
tPUW
Time
Figure 65a. Power-up Timing and Voltage Levels
- 79 -
W25Q256JW
/CS must track VCC
during VCC Ramp Up/Down
VCC
/CS
Time
Figure 65b. Power-up, Power-Down Requirement
9.3.1 Power Cycle Requirement
For power cycle, the system must not initial the power-up sequence until Vcc drops down to VPWD and
keeps a tPWD for device to initialize correctly.
VCC
Chip select is notacceptable
VCC (max)
VCC
(min)
Device is fully accessible
tVSL
V
PWD (max)
tPWD
Time
Figure 65c. Power Cycle Requirement
Publication Release Date: December 08. 2017
- Revision B
- 80 -
W25Q256JW
9.4 DC Electrical Characteristics
SPEC
TYP
PARAMETER
SYMBOL
CONDITIONS
UNIT
MAX
MIN
(1)
Input Capacitance
Output Capacitance
Input Leakage
CIN
VIN = 0V
6
8
pF
pF
µA
µA
(1)
Cout
VOUT = 0V
ILI
±2
±2
I/O Leakage
ILO
/CS = VCC,
VIN = GND or VCC
Standby Current
ICC1
ICC2
10
1
35
15
µA
µA
/CS = VCC,
VIN = GND or VCC
Power-down Current
C = 0.1 VCC / 0.9
VCC
DO = Open
ICC3(2)
Current Read Data 1MHz
1
6
3
8
mA
mA
mA
mA
C = 0.1 VCC / 0.9
VCC
DO = Open
Current Read Data / Dual
/Quad 50MHz
ICC3(2)
ICC3(2)
C = 0.1 VCC / 0.9
VCC
DO = Open
Current Read Data / Dual
/Quad 80MHz
8
10
12
ICC3(2)
Current Read Data / Dual
Output Read/Quad Output
Read 104MHz
C = 0.1 VCC / 0.9
VCC
DO = Open
10
Current Write Status
Register
ICC4
ICC5
ICC6
/CS = VCC
/CS = VCC
/CS = VCC
/CS = VCC
12
12
12
12
20
20
20
mA
mA
mA
Current Page Program
Current Sector/Block
Erase
Current Chip Erase
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
ICC7
VIL
20
mA
V
VCC x 0.3
–0.5
VIH
VCC x 0.7
V
VOL
VOH
IOL = 100 µA
0.2
V
IOH = –100 µA
VCC – 0.2
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 1.8V.
2. Checker Board Pattern.
- 81 -
W25Q256JW
9.5 AC Measurement Conditions
SPEC
PARAMETER
SYMBOL
UNIT
MAX
MIN
Load Capacitance
CL
TR, TF
VIN
30
5
pF
ns
V
Input Rise and Fall Times
Input Pulse Voltages
0.1 VCC to 0.9 VCC
0.3 VCC to 0.7 VCC
0.5 VCC to 0.5 VCC
Input Timing Reference Voltages
Output Timing Reference Voltages
IN
V
OUT
V
Note:
1. Output Hi-Z is defined as the point where data out is no longer driven.
Input and Output
Timing Reference Levels
Input Levels
0.9 VCC
0.5 VCC
0.1 VCC
Figure 66. AC Measurement I/O Waveform
Publication Release Date: December 08. 2017
- Revision B
- 82 -
W25Q256JW
9.6 AC Electrical Characteristics(4,5)
SPEC
UNIT
DESCRIPTION
SYMBOL
ALT
MIN
D.C.
D.C.
TYP
MAX
133
104
FR
FR
fR
fC1
fC2
MHz
MHz
MHz
Clock frequency for Quad I/O
Clock frequency except Quad I/O and 03h
Clock frequency for Read Data instruction (03h)
D.C.
50
45%
PC
Clock High, Low Time
for all instructions except for Read Data (03h)
tCLH,
tCLL
ns
ns
(1)
45%
PC
Clock High, Low Time
for Read Data (03h) instruction
tCRLH,
(1)
tCRLL
(2)
Clock Rise Time peak to peak
Clock Fall Time peak to peak
/CS Active Setup Time relative to CLK
/CS Not Active Hold Time relative to CLK
Data In Setup Time
tCLCH
0.1
0.1
5
V/ns
V/ns
ns
(2)
tCHCL
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL1
tSHSL2
tCSS
5
ns
tDSU
tDH
2
ns
Data In Hold Time
3
ns
/CS Active Hold Time relative to CLK
/CS Not Active Setup Time relative to CLK
/CS Deselect Time (During Read)
/CS Deselect Time (During Erase or Program or Write)
Output Disable Time
5
ns
5
ns
tCSH
tCSH
tDIS
tV1
10
50
ns
ns
(2)
tSHQZ
10
6
ns
Clock Low to Output Valid
tCLQV1
tCLQX
ns
Output Hold Time
tHO
2
ns
Continued – next page
- 83 -
W25Q256JW
9.7 AC Electrical Characteristics (cont’d)
DESCRIPTION
SPEC
TYP
SYMBOL
ALT
UNIT
MIN
MAX
(3)
Write Protect Setup Time Before /CS Low
tWHSL
20
ns
(3)
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
tSHWL
100
ns
µs
(2)
tDP
3
(2)
/CS High to Standby Mode without ID Read
/CS High to Standby Mode with ID Read
/CS High to next Instruction after Suspend
tRES1
3
µs
µs
µs
(2)
tRES2
1.8
20
(2)
tSUS
(2)
/CS High to next Instruction after Reset
/RESET pin Low period to reset the device
Write Status Register Time
tRST
30
µs
µs
tRESET
1(3)
(2)
tW
2
30
ms
Page Program Time
tPP
tSE
0.8
50
5
ms
ms
Sector Erase Time (4KB)
400
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
tBE1
tBE2
tCE
120
200
90
1,600
2,000
400
ms
ms
s
Notes:
1. Clock high + Clock low must be less than or equal to PC = 1/fC(MAX.).
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. It is possible to reset the device with shorter tRESET (as short as a few hundred ns), a 1us minimum is recommended to
ensure reliable operation.
4. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 1.8V, 25% driver
strength.
5. 4-bytes address alignment: read address always start from (A1,A0)=[0,0]
Publication Release Date: December 08. 2017
- 84 -
- Revision B
W25Q256JW
9.8 Serial Output Timing
/CS
tCLH
CLK
tCLQV
tCLQX
tCLQV
tCLL
tSHQZ
tCLQX
IO
output
MSB OUT
LSB OUT
9.9 Serial Input Timing
/CS
tSHSL
tSHCH
tCHSL
tSLCH
tCHSH
CLK
tDVCH
tCHDX
tCLCH
tCHCL
IO
input
MSB IN
LSB IN
9.10 /WP Timing
/CS
tWHSL
/WP
tSHWL
CLK
IO
input
Write Status Register is allowed
Write Status Register is not allowed
- 85 -
W25Q256JW
10. PACKAGE SPECIFICATIONS
10.1 16-Pin SOIC 300-mil (Package Code F)
Millimeters
Symbol
Inches
Nom
0.098
---
Min
2.36
0.10
---
Nom
2.49
---
Max
2.64
0.30
---
Min
0.093
0.004
---
Max
0.104
0.012
---
A
A1
A2
b
2.31
0.41
0.23
10.31
10.31
7.49
1.27 BSC
0.81
---
0.091
0.016
0.009
0.406
0.406
0.295
0.050 BSC
0.032
---
0.33
0.18
10.08
10.01
7.39
0.51
0.28
10.49
10.64
7.59
0.013
0.007
0.397
0.394
0.291
0.020
0.011
0.413
0.419
0.299
C
D
E
E1
e
L
0.38
---
1.27
0.076
8°
0.015
---
0.050
0.003
8°
y
θ
0°
---
0°
---
Publication Release Date: December 08. 2017
- Revision B
- 86 -
W25Q256JW
10.1 8-Pad WSON 6x5-mm (Package Code P)
Millimeters
Symbol
Inches
Min
0.70
0.00
Nom
Max
0.80
0.05
Min
0.028
0.000
Nom
0.030
0.001
Max
0.031
0.002
A
0.75
A1
0.02
b
C
0.35
---
0.40
0.20 REF
6.00
0.48
---
0.014
---
0.016
0.008 REF
0.236
0.019
---
D
5.90
2.9
6.10
3.10
5.10
4.35
0.232
0.114
0.193
0.167
0.240
0.136
0.201
0.171
D2
E
3.0
0.118
4.90
4.25
5.00
0.197
E2
e
4.30
0.169
1.27 BSC
0.050 BSC
L
y
0.55
0.00
0.60
---
0.65
0.022
0.000
0.024
---
0.026
0.003
0.075
Note:
The metal pad area on the bottom center of the package is not connected to any internal electrical signals. It can be
left floating or connected to the device ground (GND pin). Avoid placement of exposed PCB vias under the pad.
- 87 -
W25Q256JW
10.2 8-Pad WSON 8x6-mm (Package Code E)
MILLIMETERS
SYMBOL
INCHES
Min
0.70
0.00
0.35
---
Nom
0.75
Max
0.80
0.05
0.48
---
Min
0.028
0.000
0.014
---
Nom
0.030
Max
0.031
0.002
0.019
---
A
A1
b
0.02
0.001
0.40
0.016
C
0.20 Ref.
8.00
0.008 Ref.
0.315
D
7.90
3.35
5.90
4.25
8.10
3.45
6.10
4.35
0.311
0.132
0.232
0.167
0.319
0.136
0.240
0.171
D2
E
3.40
0.134
6.00
0.236
E2
e
4.30
0.169
1.27 BSC
0.50
0.050 BSC
0.020
L
0.45
0.00
0.55
0.05
0.018
0.000
0.022
0.002
y
---
---
Note:
The metal pad area on the bottom center of the package is not connected to any internal electrical signals. It can be
left floating or connected to the device ground (GND pin). Avoid placement of exposed PCB vias under the pad.
Publication Release Date: December 08. 2017
- 88 -
- Revision B
W25Q256JW
10.3 24-Ball TFBGA 8x6-mm (Package Code B, 5x5-1 Ball Array)
Note:
Ball land: 0.45mm.
Ball Opening: 0.35mm
PCB ball land suggested <= 0.35mm
Millimeters
Inches
Nom
---
Symbol
Min
---
Nom
---
Max
1.20
0.36
---
Min
---
Max
0.047
0.014
---
A
A1
A2
b
0.26
---
0.31
0.010
---
0.012
0.85
0.033
0.35
7.90
0.40
0.45
8.10
0.014
0.311
0.016
0.018
0.319
D
8.00
0.315
D1
E
4.00 BSC
6.00
0.157 BSC
0.236
5.90
6.10
0.232
0.240
E1
SE
SD
e
4.00 BSC
1.00 TYP
1.00 TYP
1.00 BSC
---
0.157 BSC
0.039 TYP
0.039 TYP
0.039 BSC
---
ccc
---
0.10
---
0.0039
- 89 -
W25Q256JW
10.4 24-Ball TFBGA 8x6-mm (Package Code C, 6x4 Ball Array)
Note:
Ball land: 0.45mm.
Ball Opening: 0.35mm
PCB ball land suggested <= 0.35mm
Millimeters
Inches
Nom
---
Symbol
Min
---
Nom
---
Max
1.20
0.35
0.45
8.05
Min
---
Max
0.047
0.014
0.018
0.317
A
A1
b
0.25
0.35
7.95
0.30
0.010
0.014
0.313
0.012
0.40
0.016
D
8.00
0.315
D1
E
5.00 BSC
6.00
0.197 BSC
0.236
5.95
---
6.05
0.10
0.234
---
0.238
0.039
E1
e
3.00 BSC
1.00 BSC
---
0.118 BSC
0.039 BSC
---
ccc
Publication Release Date: December 08. 2017
- Revision B
- 90 -
W25Q256JW
10.5 32-Ball WLCSP (Package Code Y, Ball pitch:0.50mm)
Millimeters
Symbol
Inches
Nom
0.02
Min
0.454
0.152
0.302
0.240
Nom
0.497
0.167
0.330
0.300
2.50
Max
0.540
0.182
0.358
0.360
Min
0.018
0.006
0.012
0.009
Max
0.021
0.007
0.014
0.014
A
A1
c
0.007
0.013
0.01
b
D1
D2
D3
E1
E2
E3
eD
eE
aaa
bbb
ccc
ddd
0.098
0.059
0.02
1.50
0.663
2.50
0.154
0.114
0.047
3.50
0.633
0.5 BSC
0.5 BSC
0.10
0.0197 BSC
0.0197 BSC
0.004
0.10
0.004
0.03
0.001
0.15
0.006
Note:
1.
Dimension b is measured at the maximum solder bump diameter, parallel to primary datum C.
2. For dimension D & E; please contact Winbond.
- 91 -
W25Q256JW
10.6 Ordering Information
(1)
(1)
W 25Q 256J W x I
W
=
Winbond
25Q
=
SpiFlash Serial Flash Memory with 4KB sectors, Dual/Quad I/O
256J
=
256M-bit
W
=
1.7V to 1.95V
F
E
C
=
=
=
16-pin SOIC 300-mil
8-pad WSON 8x6mm
24-ball TFBGA 8x6-mm (6x4 ball array)
P
B
Y
=
=
=
WSON8 6x5-mm
24-ball TFBGA 8x6-mm (5x5 ball array)
32-ball WLCSP
I
=
Industrial (-40°C to +85°C)
(2,3)
(4)
Q
=
=
Green Package (Lead-free, RoHS Compliant, Halogen-free (TBBA), Antimony-Oxide-free Sb2O3)
with QE = 1 (fixed) in Status register-2. Backward compatible to FW family.
(5)
M
Green Package (Lead-free, RoHS Compliant, Halogen-free (TBBA), Antimony-Oxide-free Sb2O3)
with QE = 0 (programmable) in Status register-2. New device ID is used to identify JW family
Notes:
1. The “W” prefix and the Temperature designator “I” are not included on the part marking.
2. Standard bulk shipments are in Tube (shape E). Please specify alternate packing method, such as Tape and
Reel (shape T) or Tray (shape S), when placing orders.
3. For shipments with special order options, please contact Winbond.
4. /HOLD function is disabled to support Standard, Dual and Quad I/O without user setting.
5. For DTR, QPI supporting, please refer to W25Q256JW DTR datasheet
Publication Release Date: December 08. 2017
- 92 -
- Revision B
W25Q256JW
10.7 Valid Part Numbers and Top Side Marking
The following table provides the valid part numbers for the W25Q256JW SpiFlash Memory. Please
contact Winbond for specific availability by density and package type. Winbond SpiFlash memories use a
12-digit Product Number for ordering. However, due to limited space, the Top Side Marking on all
packages uses an abbreviated 10-digit number.
W25Q256JW-IQ valid part numbers:
PACKAGE TYPE
DENSITY
256M-bit
256M-bit
PRODUCT NUMBER
W25Q256JWFIQ
W25Q256JWPIQ
TOP SIDE MARKING
25Q256JWFQ
F
SOIC-16 300mil
P
25Q256JWPQ
WSON-8 6x5-mm
E
256M-bit
256M-bit
W25Q256JWEIQ
W25Q256JWBIQ
25Q256JWEQ
25Q256JWBQ
WSON-8 8x6mm
B
TFBGA-24 8x6mm
(5x5-1 Ball Array)
C
TFBGA-24 8x6mm
(6x4 Ball Array)
256M-bit
256M-bit
W25Q256JWCIQ
W25Q256JWYIQ
25Q256JWCQ
Y(1)
Q256JWY
IC-yyww
32-ball WLCSP
W25Q256JW-IM(2) valid part numbers:
PACKAGE TYPE
DENSITY
256M-bit
256M-bit
PRODUCT NUMBER
W25Q256JWFIM
W25Q256JWPIM
TOP SIDE MARKING
25Q256JWFM
F
SOIC-16 300mil
P
25Q256JWPM
WSON-8 6x5-mm
E
256M-bit
256M-bit
W25Q256JWEIM
W25Q256JWBIM
25Q256JWEM
25Q256JWBM
WSON-8 8x6mm
B
TFBGA-24 8x6mm
(5x5-1 Ball Array)
C
TFBGA-24 8x6mm
(6x4 Ball Array)
256M-bit
W25Q256JWCIM
25Q256JWCM
Note:
1. WLCSP package type Y has special top marking due to size limitation.
2. For DTR, QPI supporting, please refer to W25Q256JW DTR datasheet.
- 93 -
W25Q256JW
11. REVISION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
New Create Preliminary
Removed 77h command
Updated /WP information
Updated instruction set table – 03h
Updated ICC1-3
A
09/09/2016
Updated tPP(max.), tCHSH, tSHCH, tSHQZ, tCLQV
Added WLCSP information
Added WSON6X5 information
Removed “Preliminary”
B
12/08/2017
81
88
Updated Icc1(max.)
Updated WSON6X5 D2 information
Trademarks
Winbond and SpiFlash are trademarks of Winbond Electronics Corporation.
All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in systems
or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for
other applications intended to support or sustain life. Furthermore, Winbond products are not intended for
applications wherein failure of Winbond products could result or lead to a situation wherein personal injury,
death or severe property or environmental damage could occur. Winbond customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any
damages resulting from such improper use or sales.
Information in this document is provided solely in connection with Winbond products. Winbond
reserves the right to make changes, corrections, modifications or improvements to this document
and the products and services described herein at any time, without notice.
Publication Release Date: December 08. 2017
- 94 -
- Revision B
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