W25X32AVSSIG [WINBOND]
32M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI; 与4KB扇区输出和双输出的SPI 32M位串行闪存
| 型号： | W25X32AVSSIG |
| 厂家： | 
WINBOND |
| 描述： | 32M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI |
| 文件： | 总45页 (文件大小：1290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
W25X32A
32M-BIT
SERIAL FLASH MEMORY WITH
4KB SECTORS AND DUAL OUTPUT SPI
Publication Release Date: August 7, 2009
Preliminary - Revision B
- 1 -
W25X32A
Table of Contents
1
2
3
4
5
6
7
GENERAL DESCRIPTION...............................................................................................................4
FEATURES.......................................................................................................................................4
PIN CONFIGURATION SOIC 208-MIL ............................................................................................5
PAD CONFIGURATION WSON 6X5-MM & 8X6-MM......................................................................5
PIN DESCRIPTION SOIC 208-MIL, WSON 6X5-MM, WSON 8X6-MM..........................................5
PIN CONFIGURATION SOIC 300-MIL ............................................................................................6
PIN DESCRIPTION SOIC 300-MIL..................................................................................................6
7.1
7.2
7.3
7.4
7.5
7.6
7.7
Package Types.....................................................................................................................7
Chip Select (/CS)..................................................................................................................7
Serial Data Output (DO).......................................................................................................7
Write Protect (/WP)...............................................................................................................7
HOLD (/HOLD) .....................................................................................................................7
Serial Clock (CLK)................................................................................................................7
Serial Data Input / Output (DIO)...........................................................................................7
8
9
BLOCK DIAGRAM............................................................................................................................8
FUNCTIONAL DESCRIPTION.........................................................................................................9
9.1
SPI OPERATIONS ...............................................................................................................9
9.1.1 SPI Modes..............................................................................................................................9
9.1.2 Dual Output SPI .....................................................................................................................9
9.1.3 Hold Function .........................................................................................................................9
9.2
WRITE PROTECTION .......................................................................................................10
9.2.1 Write Protect Features..........................................................................................................10
10
CONTROL AND STATUS REGISTERS ........................................................................................11
10.1 STATUS REGISTER..........................................................................................................11
10.1.1 BUSY..................................................................................................................................11
10.1.2 Write Enable Latch (WEL)..................................................................................................11
10.1.3 Block Protect Bits (BP2, BP1, BP0)....................................................................................11
10.1.4 Top/Bottom Block Protect (TB)...........................................................................................11
10.1.5 Reserved Bits.....................................................................................................................11
10.1.6 Status Register Protect (SRP)............................................................................................12
10.1.7 Status Register Memory Protection....................................................................................13
10.2 INSTRUCTIONS.................................................................................................................14
10.2.1 Manufacturer and Device Identification ..............................................................................14
10.2.2 Instruction Set ....................................................................................................................15
10.2.3 Write Enable (06h)..............................................................................................................16
10.2.4 Write Disable (04h).............................................................................................................16
- 2 -
W25X32A
10.2.5 Read Status Register (05h)................................................................................................17
10.2.6 Write Status Register (01h) ................................................................................................18
10.2.7 Read Data (03h).................................................................................................................19
10.2.8 Fast Read (0Bh).................................................................................................................20
10.2.9 Fast Read Dual Output (3Bh).............................................................................................21
10.2.10 Page Program (02h).........................................................................................................22
10.2.11 Sector Erase (20h) ...........................................................................................................23
10.2.12 Block Erase (D8h) ............................................................................................................24
10.2.13 Chip Erase (C7h)..............................................................................................................25
10.2.14 Power-down (B9h)............................................................................................................26
10.2.15 Release Power-down / Device ID (ABh)...........................................................................27
10.2.16 Read Manufacturer / Device ID (90h)...............................................................................29
10.2.17 JEDEC ID (9Fh)................................................................................................................30
11
ELECTRICAL CHARACTERISTICS ..............................................................................................31
11.1 Absolute Maximum Ratings................................................................................................31
11.2 Operating Ranges ..............................................................................................................31
11.3 Power-up Timing and Write Inhibit Threshold....................................................................32
11.4 DC Electrical Characteristics..............................................................................................33
11.5 AC Measurement Conditions .............................................................................................34
11.6 AC Electrical Characteristics..............................................................................................35
11.7 AC Electrical Characteristics (cont’d).................................................................................36
11.8 Serial Output Timing...........................................................................................................37
11.9 Input Timing........................................................................................................................37
11.10 Hold Timing.......................................................................................................................37
PACKAGE SPECIFICATION..........................................................................................................38
12.1 8-Pin SOIC 208-mil (Package Code SS) ...........................................................................38
12.2 8-Contact 6x5mm WSON (Package Code ZP)..................................................................39
8-Contact 6x5mm WSON Cont’d....................................................................................................40
12.3 16-Pin SOIC 300-mil (Package Code SF)..........................................................................41
12.4 8-Contact 8x6mm WSON (Package Code ZE)..................................................................42
ORDERING INFORMATION..........................................................................................................43
13.1 Valid Part Numbers and Top Side Marking........................................................................44
REVISION HISTORY......................................................................................................................45
12
13
14
Publication Release Date: August 7, 2009
- 3 -
Preliminary - Revision B
W25X32A
1
GENERAL DESCRIPTION
The W25X32A (32M-bit) Serial Flash memory provide a storage solution for systems with limited space,
pins and power. The 25X series offers flexibility and performance well beyond ordinary Serial Flash
devices. They are ideal for code download applications as well as storing voice, text and data. The
devices operate on a single 2.7V to 3.6V power supply with current consumption as low as 5mA active
and 1µA for power-down. All devices are offered in space-saving packages.
The W25X32A array is organized into 16,384 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time using the Page Program instruction. Pages can be erased in groups of 16
(sector erase), groups of 256 (block erase) or the entire chip (chip erase). The W25X32A has 1,024
erasable sectors and 64 erasable blocks. The small 4KB sectors allow for greater flexibility in applications
that require data and parameter storage. (See figure 2.)
The W25X32A supports the standard Serial Peripheral Interface (SPI), and a high performance dual
output SPI using four pins: Serial Clock, Chip Select, Serial Data I/O and Serial Data Out. SPI clock
frequencies of up to 100MHz are supported allowing equivalent clock rates of 200MHz when using the
Fast Read Dual Output instruction. These transfer rates are comparable to those of 8 and 16-bit Parallel
Flash memories.
A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control features,
provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and
device identification.
2
FEATURES
Family of Serial Flash Memories
Low Power Consumption, Wide
Temperature Range
– Single 2.7 to 3.6V supply
– 5mA active current, 1µA Power-down (typ)
– -40° to +85°C operating range
– W25X32A: 32M-bit / 4M-byte (4,194,304)
– 256-bytes per programmable page
– Uniform 4K-byte Sectors / 64K-byte Blocks
SPI with Single or Dual Outputs
– Clock, Chip Select, Data I/O, Data Out
– Optional Hold function for SPI flexibility
Software and Hardware Write Protection
– Write-Protect all or portion of memory
– Enable/Disable protection with /WP pin
– Top or bottom array protection
Data Transfer up to 150M-bits / second
– Clock operation to 100MHz
– Fast Read Dual Output instruction
– Auto-increment Read capability
Space Efficient Packaging
– 8-pin SOIC 208-mil
– 16-pin SOIC 300-mil
– 8-pad WSON 6x5-mm
Flexible Architecture with 4KB sectors
– Sector Erase (4K-bytes)
– 8-pad WSON 8x6-mm(1)
– Block Erase (64K-byte)
– Page program up to 256 bytes <2ms
– More than 100,000 erase/write cycles
– More than 20-year data retention
Note 1 – Special Order Device Package, please contact Winbond for more information about this package type.
- 4 -
W25X32A
3
PIN CONFIGURATION SOIC 208-MIL
Figure 1a. W25X32A Pin Assignments, 8-pin SOIC 208-mil (Package Code SS)
4
PAD CONFIGURATION WSON 6X5-MM & 8X6-MM
Figure 1b. W25X32A Pad Assignments, 8-pad WSON 6x5-mm (Package Code ZP) & 8x6-mm (Package Code ZE)
5
PIN DESCRIPTION SOIC 208-MIL, WSON 6X5-MM, WSON 8X6-MM
PIN NO.
PIN NAME
/CS
I/O
I
FUNCTION
1
2
3
4
5
6
7
8
Chip Select Input
Data Output
DO
O
I
/WP
Write Protect Input
Ground
GND
DIO
I/O
Data Input / Output
Serial Clock Input
Hold Input
CLK
I
I
/HOLD
VCC
Power Supply
Publication Release Date: August 7, 2009
Preliminary - Revision B
- 5 -
W25X32A
6
PIN CONFIGURATION SOIC 300-MIL
Figure 1c. W25X32A Pin Assignments, 16-pin SOIC 300-mil (Package Code SF)
7
PIN DESCRIPTION SOIC 300-MIL
PIN NO.
PIN NAME
/HOLD
VCC
N/C
I/O
FUNCTION
1
2
I
Hold Input
Power Supply
No Connect
3
4
N/C
No Connect
5
N/C
No Connect
6
N/C
No Connect
7
/CS
I
O
I
Chip Select Input
Data Output
Write Protect Input
Ground
8
DO
9
/WP
GND
N/C
10
11
12
13
14
15
16
No Connect
N/C
No Connect
N/C
No Connect
N/C
No Connect
DIO
I/O
I
Data Input / Output
Serial Clock Input
CLK
- 6 -
W25X32A
7.1 Package Types
W25X32A is offered in an 8-pin plastic 208-mil width SOIC (package code SS), 6x5-mm WSON (package
code ZP), 16-pin plastic 300-mil width SOIC (package code SF) and Specal Order 8x6-mm (package
code ZE). See figures 1a-c. Package diagrams and dimensions are illustrated at the end of this
datasheet.
7.2 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables the device operation. When /CS is high the device is
deselected and the Serial Data Output (DO) pin is at high impedance. When deselected, the device’s
power consumption will be at standby levels unless an internal erase, program or status register cycle is
in progress. When /CS is brought low the device will be selected, power consumption will increase to
active levels and instructions can be written to and data read from the device. After power-up, /CS must
transition from high to low before a new instruction will be accepted. The /CS input must track the VCC
supply level at power-up (see “Write Protection” and figure 20). If needed a pull-up resister on /CS can be
used to accomplish this.
7.3 Serial Data Output (DO)
The SPI Serial Data Output (DO) pin provides a means for data and status to be serially read from
(shifted out of) the device. Data is shifted out on the falling edge of the Serial Clock (CLK) input pin.
7.4 Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (BP2, BP1, and BP0) bits and Status Register
Protect (SRP) bits, a portion or the entire memory array can be hardware protected. The /WP pin is active
low.
7.5 HOLD (/HOLD)
The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought low,
while /CS is low, the DO pin will be at high impedance and signals on the DIO and CLK pins will be
ignored (don’t care). When /HOLD is brought high, device operation can resume. The /HOLD function can
be useful when multiple devices are sharing the same SPI signals. (“See Hold function”)
7.6 Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI
Operations")
7.7 Serial Data Input / Output (DIO)
The SPI Serial Data Input/Output (DIO) pin provides a means for instructions, addresses and data to be
serially written to (shifted into) the device. Data is latched on the rising edge of the Serial Clock (CLK)
input pin. The DIO pin is also used as an output pin when the Fast Read Dual Output instruction is
executed.
Publication Release Date: August 7, 2009
- 7 -
Preliminary - Revision B
W25X32A
8 BLOCK DIAGRAM
Block Segmentation
3FFF00h
•
3F0000h
3FFFFFh
•
3F00FFh
xxFF00h
•
xxFFFFh
•
Block 63 (64KB)
Sector 15 (4KB)
Sector 14 (4KB)
Sector 13 (4KB)
xxF000h
xxF0FFh
xxEF00h
•
xxEFFFh
•
xxE000h
xxE0FFh
xxDF00h
•
xxDFFFh
•
xxD000h
xxD0FFh
•
•
•
•
•
•
xx2F00h
•
xx2000h
xx2FFFh
•
xx20FFh
Sector 2 (4KB)
Sector 1 (4KB)
Sector 0 (4KB)
20FF00h
•
200000h
20FFFFh
•
2000FFh
xx1F00h
•
xx1000h
xx1FFFh
•
xx10FFh
Block 32 (64KB)
Block 31 (64KB)
xx0F00h
•
xx0FFFh
•
1FFF00h
•
1FFFFFh
•
xx0000h
xx00FFh
1F0000h
1F00FFh
•
•
•
Write Control
Logic
/WP
10FF00h
•
100000h
10FFFFh
•
1000FFh
Block 16 (64KB)
Block 15 (64KB)
Status
Register
0FFF00h
•
0FFFFFh
•
0F0000h
0F00FFh
•
•
•
High Voltage
Generators
00FF00h
•
000000h
00FFFFh
•
0000FFh
Block 0 (64KB)
/HOLD
CLK
Page Address
Latch / Counter
Beginning
Page Address
Ending
Page Address
SPI
Command &
Control Logic
/CS
Column Decode
And 256-Byte Page Buffer
Data
DIO
DO
Byte Address
Latch / Counter
Figure 2. W25X32A Serial Flash Memory Block Diagram
- 8 -
W25X32A
9
FUNCTIONAL DESCRIPTION
9.1 SPI OPERATIONS
9.1.1 SPI Modes
The W25X32A is accessed through an SPI compatible bus consisting of four signals: Serial Clock (CLK),
Chip Select (/CS), Serial Data Input/Output (DIO) and Serial Data Output (DO). Both SPI bus operation
Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3 concerns
the normal state of the CLK signal when the SPI bus master is in standby and data is not being
transferred to the Serial Flash. For Mode 0 the CLK signal is normally low. For Mode 3 the CLK signal is
normally high. In either case data input on the DIO pin is sampled on the rising edge of the CLK. Data on
the DO and DIO pins are clocked out on the falling edge of CLK.
9.1.2 Dual Output SPI
The W25X32A supports Dual output operation when using the "Fast Read with Dual Output" (3B hex)
instruction. This feature allows data to be transferred from the Serial Flash memory at twice the rate
possible with the standard SPI. This instruction is ideal for quickly downloading code from Flash to RAM
upon power-up (code-shadowing) or for applications that cache code-segments to RAM for execution.
The Dual output feature simply allows the SPI input pin to also serve as an output during this instruction.
All other operations use the standard SPI interface with single output signal.
9.1.3 Hold Function
The /HOLD signal allows the W25X32A operation to be paused while it is actively selected (when /CS is
low). The /HOLD function may be useful in cases where the SPI data and clock signals are shared with
other devices. For example, consider if the page buffer was only partially written when a priority interrupt
requires use of the SPI bus. In this case the /HOLD function can save the state of the instruction and the
data in the buffer so programming can resume where it left off once the bus is available again.
To initiate a /HOLD condition, the device must be selected with /CS low. A /HOLD condition will activate
on the falling edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the
/HOLD condition will activate after the next falling edge of CLK. The /HOLD condition will terminate on the
rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the /HOLD
condition will terminate after the next falling edge of CLK.
During a /HOLD condition, the Serial Data Output (DO) is high impedance, and Serial Data Input/Output
(DIO) and Serial Clock (CLK) are ignored. The Chip Select (/CS) signal should be kept active (low) for the
full duration of the /HOLD operation to avoid resetting the internal logic state of the device.
Publication Release Date: August 7, 2009
- 9 -
Preliminary - Revision B
W25X32A
9.2 WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern the W25X32A
provides several means to protect data from inadvertent writes.
9.2.1 Write Protect Features
Device resets when VCC is below threshold.
Time delay write disable after Power-up.
Write enable/disable instructions.
Automatic write disable after program and erase.
Software write protection using Status Register.
Hardware write protection using Status Register and /WP pin.
Write Protection using Power-down instruction.
Upon power-up or at power-down the W25X32A will maintain a reset condition while VCC is below the
threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 20). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage
exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until
the VCC-min level and tVSL time delay is reached. If needed a pull-up resister on /CS can be used to
accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector
Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a program,
erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-disabled state
of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting
the Status Register Protect (SRP) and Block Protect (TB, BP2, BP1, and BP0) bits. These Status
Register bits allow a portion or all of the memory to be configured as read only. Used in conjunction with
the Write Protect (/WP) pin, changes to the Status Register can be enabled or disabled under hardware
control. See Status Register for further information.
Additionally, the Power-down instruction offers an extra level of write protection as all instructions are
ignored except for the Release Power-down instruction.
- 10 -
W25X32A
10 CONTROL AND STATUS REGISTERS
The Read Status Register instruction can be used to provide status on the availability of the Flash
memory array, if the device is write enabled or disabled, and the state of write protection. The Write
Status Register instruction can be used to configure the devices write protection features. See Figure 3.
10.1 STATUS REGISTER
10.1.1 BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a
Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction. During this
time the device will ignore further instructions except for the Read Status Register instruction (see tW, tPP,
tSE, tBE, and tCE in AC Characteristics). When the program, erase or write status register instruction has
completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for further instructions.
10.1.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to a 1 after executing a
Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is write disabled. A write
disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Sector Erase, Block Erase, Chip Erase and Write Status Register.
10.1.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, and BP0) are non-volatile read/write bits in the status register (S4, S3,
and S2) that provide Write Protection control and status. Block Protect bits can be set using the Write
Status Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array can
be protected from Program and Erase instructions (see Status Register Memory Protection table). The
factory default setting for the Block Protection Bits is 0, none of the array protected. The Block Protect bits
can not be written to if the Status Register Protect (SRP) bit is set to 1 and the Write Protect (/WP) pin is
low.
10.1.4 Top/Bottom Block Protect (TB)
The Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB=0) or
the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table. The TB bit is
non-volatile and the factory default setting is TB=0. The TB bit can be set with the Write Status Register
Instruction provided that the Write Enable instruction has been issued. The TB bit can not be written to if
the Status Register Protect (SRP) bit is set to 1 and the Write Protect (/WP) pin is low.
10.1.5 Reserved Bits
Status register bit location S6 is reserved for future use. Current devices will read 0 for this bit location. It
is recommended to mask out the reserved bit when testing the Status Register. Doing this will ensure
compatibility with future devices.
Publication Release Date: August 7, 2009
- 11 -
Preliminary - Revision B
W25X32A
10.1.6 Status Register Protect (SRP)
The Status Register Protect (SRP) bit is a non-volatile read/write bit in status register (S7) that can be
used in conjunction with the Write Protect (/WP) pin to disable writes to status register. When the SRP bit
is set to a 0 state (factory default) the /WP pin has no control over status register. When the SRP pin is
set to a 1, the Write Status Register instruction is locked out while the /WP pin is low. When the /WP pin
is high the Write Status Register instruction is allowed.
Figure 3. Status Register Bit Locations
- 12 -
W25X32A
10.1.7 Status Register Memory Protection
STATUS REGISTER(1)
W25X32A (32M-BIT) MEMORY PROTECTION
TB
x
BP2 BP1 BP0
BLOCK(S)
NONE
ADDRESSES
DENSITY
NONE
64KB
128KB
256KB
512KB
1MB
PORTION
NONE
0
0
0
0
1
1
1
0
0
0
1
1
1
1
0
0
1
1
0
0
1
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
NONE
0
0
0
0
0
0
1
1
1
1
1
1
x
63
3F0000h – 3FFFFFh
3E0000h – 3FFFFFh
3C0000h – 3FFFFFh
380000h – 3FFFFFh
300000h – 3FFFFFh
200000h – 3FFFFFh
000000h – 00FFFFh
000000h – 01FFFFh
000000h – 03FFFFh
000000h – 07FFFFh
000000h – 0FFFFFh
000000h – 1FFFFFh
000000h – 3FFFFFh
Upper 1/64
Upper 1/32
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
Lower 1/64
Lower 1/32
Lower 1/16
Lower 1/8
Lower 1/4
Lower 1/2
ALL
62 and 63
60 thru 63
56 thru 63
48 thru 63
32 thru 63
0
0 and 1
0 thru 3
0 thru 7
0 thru 15
0 thru 31
0 thru 63
2MB
64KB
128KB
256KB
512KB
1MB
2MB
4MB
Note:
1. x = don’t care
Publication Release Date: August 7, 2009
Preliminary - Revision B
- 13 -
W25X32A
10.2 INSTRUCTIONS
The instruction set of the W25X32A consists of fifteen basic instructions that are fully controlled through
the SPI bus (see Instruction Set table). Instructions are initiated with the falling edge of Chip Select (/CS).
The first byte of data clocked into the DIO input provides the instruction code. Data on the DIO input is
sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in figures 4
through 19. All read instructions can be completed after any clocked bit. However, all instructions that
Write, Program or Erase must complete on a byte boundary (CS driven high after a full 8-bits have been
clocked) otherwise the instruction will be terminated. This feature further protects the device from
inadvertent writes. Additionally, while the memory is being programmed or erased, or when the Status
Register is being written, all instructions except for Read Status Register will be ignored until the program
or erase cycle has completed.
10.2.1 Manufacturer and Device Identification
MANUFACTURER ID
(M7-M0)
Winbond Serial Flash
EFh
(ID15-ID0)
9Fh
Device ID
Instruction
W25X32A
(ID7-ID0)
ABh, 90h
15h
3016h
- 14 -
W25X32A
10.2.2 Instruction Set (1)
INSTRUCTION
NAME
BYTE 1 BYTE 2
CODE
BYTE 3
BYTE 4 BYTE 5
BYTE 6
N-BYTES
Write Enable
06h
04h
Write Disable
Read Status
Register
(2)
05h
(S7–S0)(1)
Write Status
Register
01h
03h
0Bh
S7–S0
Read Data
A23–A16
A23–A16
A15–A8
A15–A8
A7–A0
A7–A0
(D7–D0)
dummy
(Next byte)
(D7–D0)
I/O =
(D6,D4,D2,D0)
O =
continuous
(Next Byte)
continuous
Fast Read
(one byte
per 4 clocks,
continuous)
Fast Read Dual
Output
3Bh
A23–A16
A15–A8
A7–A0
dummy
(D7,D5,D3,D1)
Up to 256
bytes
Page Program
02h
D8h
20h
A23–A16
A23–A16
A23–A16
A15–A8
A15–A8
A15–A8
A7–A0
A7–A0
A7–A0
(D7–D0)
(Next byte)
Block Erase
(64KB)
Sector Erase
(4KB)
Chip Erase
Power-down
Release Power-
down / Device ID
Manufacturer/
Device ID (3)
C7h
B9h
ABh
90h
dummy
dummy
dummy
dummy
dummy
00h
(ID7-ID0)(4)
(M7-M0)
(ID7-ID0)
(ID15-ID8)
Memory
Type
(M7-M0)
Manufacturer
(ID7-ID0)
Capacity
JEDEC ID
9Fh
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “( )” indicate data being
read from the device on the DO pin.
2. The Status Register contents will repeat continuously until /CS terminates the instruction.
3. See Manufacturer and Device Identification table for Device ID information.
4. The Device ID will repeat continuously until /CS terminates the instruction.
Publication Release Date: August 7, 2009
- 15 -
Preliminary - Revision B
W25X32A
10.2.3 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a
1. The WEL bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase and
Write Status Register instruction. The Write Enable instruction is entered by driving /CS low, shifting the
instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then driving /CS high.
Figure 4. Write Enable Instruction Sequence Diagram
10.2.4 Write Disable (04h)
The Write Dissable instruction (Figure 5) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the
DIO pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon
completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip Erase
instructions.
Figure 5. Write Disable Instruction Sequence Diagram
- 16 -
W25X32A
10.2.5 Read Status Register (05h)
The Read Status Register instruction allows the 8-bit Status Register to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” into the DIO pin on the rising edge of
CLK. The status register bits are then shifted out on the DO pin at the falling edge of CLK with most
significant bit (MSB) first as shown in figure 6. The Status Register bits are shown in figure 3 and include
the BUSY, WEL, BP2-BP0, TB and SRP bits (see description of the Status Register earlier in this
datasheet).
The Read Status Register instruction may be used at any time, even while a Program, Erase or Write
Status Register cycle is in progress. This allows the BUSY status bit to be checked to determine when
the cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 6. The instruction is completed by driving /CS high.
Figure 6. Read Status Register Instruction Sequence Diagram
Publication Release Date: August 7, 2009
- 17 -
Preliminary - Revision B
W25X32A
10.2.6 Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. A Write Enable instruction
must previously have been executed for the device to accept the Write Status Register Instruction (Status
Register bit WEL must equal 1). Once write enabled, the instruction is entered by driving /CS low,
sending the instruction code “01h”, and then writing the status register data byte as illustrated in figure 7.
The Status Register bits are shown in figure 3 and described earlier in this datasheet.
Only non-volatile Status Register bits SRP, TB, BP2, BP1 and BP0 (bits 7, 5, 4, 3 and 2) can be written
to. All other Status Register bit locations are read-only and will not be affected by the Write Status
Register instruction.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Write Status Register instruction will not be executed. After /CS is driven high, the self-timed Write
Status Register cycle will commence for a time duration of tW (See AC Characteristics). While the Write
Status Register cycle is in progress, the Read Status Register instruction may still accessed to check the
status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle and a 0 when the cycle
is finished and ready to accept other instructions again. After the Write Register cycle has finished the
Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
The Write Status Register instruction allows the Block Protect bits (TB, BP2, BP1 and BP0) to be set for
protecting all, a portion, or none of the memory from erase and program instructions. Protected areas
become read-only (see Status Register Memory Protection table). The Write Status Register instruction
also allows the Status Register Protect bit (SRP) to be set. This bit is used in conjunction with the Write
Protect (/WP) pin to disable writes to the status register. When the SRP bit is set to a 0 state (factory
default) the /WP pin has no control over the status register. When the SRP pin is set to a 1, the Write
Status Register instruction is locked out while the /WP pin is low. When the /WP pin is high the Write
Status Register instruction is allowed.
Figure 7. Write Status Register Instruction Sequence Diagram
- 18 -
W25X32A
10.2.7 Read Data (03h)
The Read Data instruction allows one more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by
a 24-bit address (A23-A0) into the DIO pin. The code and address bits are latched on the rising edge of
the CLK pin. After the address is received, the data byte of the addressed memory location will be shifted
out on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is
automatically incremented to the next higher address after each byte of data is shifted out allowing for a
continuous stream of data. This means that the entire memory can be accessed with a single instruction
as long as the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in figure 8. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR
(see AC Electrical Characteristics).
Figure 8. Read Data Instruction Sequence Diagram
Publication Release Date: August 7, 2009
- 19 -
Preliminary - Revision B
W25X32A
10.2.8 Fast Read (0Bh)
The Fast Read instruction is similar to the Read Data instruction except that it can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 9. The dummy clocks allow the devices
internal circuits additional time for setting up the initial address. During the dummy clocks the data value
on the DIO pin is a “don’t care”.
Figure 9. Fast Read Instruction Sequence Diagram
- 20 -
W25X32A
10.2.9 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except
that data is output on two pins, DO and DIO, instead of just DO. This allows data to be transferred from
the W25X32A at twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal
for quickly downloading code from Flash to RAM upon power-up or for applications that cache code-
segments to RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks
is “don’t care”. However, the DIO pin should be high-impedance prior to the falling edge of the first data
out clock.
Figure 10. Fast Read Dual Output Instruction Sequence Diagram
Publication Release Date: August 7, 2009
- 21 -
Preliminary - Revision B
W25X32A
10.2.10 Page Program (02h)
The Page Program instruction allows up to 256 bytes of data to be programmed at previously erased to
all 1s (FFh) memory locations. A Write Enable instruction must be executed before the device will accept
the Page Program Instruction (Status Register bit WEL must equal 1). The instruction is initiated by
driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address (A23-A0) and
at least one data byte, into the DIO pin. The /CS pin must be held low for the entire length of the
instruction while data is being sent to the device. The Page Program instruction sequence is shown in
figure 11.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits)
should be set to 0. If the last address byte is not zero, and the number of clocks exceed the remaining
page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a
partial page) can be programmed without having any effect on other bytes within the same page. One
condition to perform a partial page program is that the number of clocks can not exceed the remaining
page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the
page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last
byte has been latched. If this is not done the Page Program instruction will not be executed. After /CS is
driven high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC
Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may
still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program
cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register
is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by
the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 11. Page Program Instruction Sequence Diagram
- 22 -
W25X32A
10.2.11 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in figure 12.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (TB, BP2, BP1,
and BP0) bits (see Status Register Memory Protection table).
Figure 12. Sector Erase Instruction Sequence Diagram
Publication Release Date: August 7, 2009
- 23 -
Preliminary - Revision B
W25X32A
10.2.12 Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in figure 13.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase
instruction will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle
is in progress, the Read Status Register instruction may still be accessed for checking the status of the
BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished
and the device is ready to accept other instructions again. After the Block Erase cycle has finished the
Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (TB, BP2, BP1, and BP0) bits (see
Status Register Memory Protection table).
Figure 13. Block Erase Instruction Sequence Diagram
- 24 -
W25X32A
10.2.13 Chip Erase (C7h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h”. The Chip Erase instruction sequence is shown in figure 14.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The
BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to
accept other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit
in the Status Register is cleared to 0. The Chip Erase instruction will not be executed if any page is
protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 14. Chip Erase Instruction Sequence Diagram
Publication Release Date: August 7, 2009
- 25 -
Preliminary - Revision B
W25X32A
10.2.14 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
figure 15.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
Figure 15. Deep Power-down Instruction Sequence Diagram
- 26 -
W25X32A
10.2.15 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, obtain the devices electronic identification (ID) number or
do both.
When used only to release the device from the power-down state, the instruction is issued by driving the
/CS pin low, shifting the instruction code “ABh” and driving /CS high as shown in figure 16. After the time
duration of tRES1 (See AC Characteristics) the device will resume normal operation and other instructions
will be accepted. The /CS pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure
17. The Device ID value for the W25X32A is listed in Manufacturer and Device Identification table. The
Device ID can be read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is
the same as previously described, and shown in figure 17, except that after /CS is driven high it must
remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will
resume normal operation and other instructions will be accepted.
If the Release from Power-down / Device ID instruction is issued while an Erase, Program or Write cycle
is in process (when BUSY equals 1) the instruction is ignored and will not have any effects on the current
cycle
Figure 16. Release Power-down Instruction Sequence
Publication Release Date: August 7, 2009
- 27 -
Preliminary - Revision B
W25X32A
Figure 17. Release Power-down / Device ID Instruction Sequence Diagram
- 28 -
W25X32A
10.2.16 Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down / Device
ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID
instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “90h”
followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond (EFh)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown
in figure 18. The Device ID value for the W25X32A is listed in Manufacturer and Device Identification
table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by
the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to
the other. The instruction is completed by driving /CS high.
Figure 18. Read Manufacturer / Device ID Diagram
Publication Release Date: August 7, 2009
- 29 -
Preliminary - Revision B
W25X32A
10.2.17 JEDEC ID (9Fh)
For compatibility reasons, the W25X32A provides several instructions to electronically determine the
identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard for SPI
compatible serial memories that was adopted in 2003.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “9Fh”. The JEDEC
assigned Manufacturer ID byte for Winbond (EFh) and two Device ID bytes, Memory Type (ID15-ID8) and
Capacity (ID7-ID0) are then shifted out on the falling edge of CLK with most significant bit (MSB) first as
shown in figure 19. For memory type and capacity values refer to Manufacturer and Device Identification
table.
Figure 19. Read JEDEC ID instruction Sequence Diagram
- 30 -
W25X32A
11 ELECTRICAL CHARACTERISTICS(1)
(2)
11.1 Absolute Maximum Ratings
PARAMETERS
SYMBOL CONDITIONS
RANGE
UNIT
Supply Voltage
VCC
VIO
–0.6 to +4.0
V
Voltage applied to any Pin
Relative to Ground
–0.6 to VCC +0.4
V
<20nS Transient
Relative to Ground
Transient Voltage on any Pin
VIOT
–2.0V to VCC+2.0V
V
Storage Temperature
TSTG
TLEAD
VESD
–65 to +150
See Note (3)
°C
°C
V
Lead Temperature
Electrostatic Discharge Voltage
Human Body Model(4)
–2000 to +2000
Notes:
1. Specification for W25X32A is preliminary. See preliminary designation at the end of this document.
2. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
3. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and
the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
4. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 ohms, R2=500 ohms).
11.2 Operating Ranges
SPEC
PARAMETER
SYMBOL CONDITIONS
UNIT
MIN
MAX
Supply Voltage
VCC
TA
FR0 = 75MHz, fR = 33MHz
Industrial
2.7
3.6
V
Ambient Temperature,
Operating
–40
+85
°C
Publication Release Date: August 7, 2009
Preliminary - Revision B
- 31 -
W25X32A
11.3 Power-up Timing and Write Inhibit Threshold
SPEC
PARAMETER
SYMBOL
UNIT
MIN
10
1
MAX
VCC (min) to /CS Low
tVSL(1)
tPUW(1)
VWI(1)
µs
ms
V
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
10
2
1
Note:
1. These parameters are characterized only.
Figure 20. Power-up Timing and Voltage Levels
- 32 -
W25X32A
11.4 DC Electrical Characteristics
SPEC
TYP
PARAMETER
SYMBOL CONDITIONS
UNIT
MIN
MAX
Input Capacitance
CIN(1)
VIN = 0V(2)
6
pF
pF
µA
µA
Output Capacitance Cout(1)
VOUT = 0V(2)
8
Input Leakage
I/O Leakage
ILI
±2
±2
ILO
/CS = VCC,
VIN = GND or VCC
Standby Current
ICC1
25
<1
50
10
µA
µA
/CS = VCC,
VIN = GND or VCC
Power-down Current ICC2
Current Read Data /
Dual Output Read
1MHz(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
ICC3
ICC3
ICC3
ICC3
5/6
7/8
7/8
mA
mA
mA
mA
Current Read Data /
Dual Output Read
33MHz(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
11/12
13/15
17/20
Current Read Data /
Dual Output Read
50MHz(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
9/10
12/14
Current Read Data /
Dual Output Read
100MHz(2)
C = 0.1 VCC / 0.9 VCC
DO = Open
Current Page
Program
ICC4
ICC5
ICC6
/CS = VCC
/CS = VCC
20
10
25
18
25
mA
mA
mA
Current Write Status
Register
Current Sector/Block
Erase
/CS = VCC
/CS = VCC
20
20
Current Chip Erase
Input Low Voltage
Input High Voltage
Output Low Voltage
ICC7
VIL
25
mA
V
–0.5
VCC x 0.3
VCC +0.4
0.4
VIH
VOL
VCC x0.7
V
IOL = 1.6 mA
V
Output High Voltage VOH
IOH = –100 µA
VCC –0.2
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA=25° C, VCC 3V.
2. Checker Board Pattern.
Publication Release Date: August 7, 2009
Preliminary - Revision B
- 33 -
W25X32A
11.5 AC Measurement Conditions
SPEC
PARAMETER
SYMBOL
UNIT
MIN
MAX
30
Load Capacitance
CL
TR, TF
VIN
pF
ns
V
Input Rise and Fall Times
Input Pulse Voltages
5
0.2 VCC to 0.8 VCC
0.3 VCC to 0.7 VCC
0.5 VCC to 0.5 VCC
Input Timing Reference Voltages
Output Timing Reference Voltages
IN
V
OUT
V
Note:
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC Measurement I/O Waveform
- 34 -
W25X32A
11.6 AC Electrical Characteristics
SPEC
DESCRIPTION
SYMBOL
ALT
UNIT
MIN
TYP MAX
Clock frequency
for all instructions, except Read Data (03h)
2.7V-3.6V VCC & Industrial Temperature
FR0
fC0
D.C.
75
MHz
MHz
Clock frequency, for Fast Read (0Bh, 3Bh) only
3.0V-3.6V VCC & Industrial Temperature
FR1
fC1
D.C.
100
33
Clock freq. Read Data instruction 03h
fR
D.C.
4.5
MHz
ns
Clock High, Low Time for all instructions
except Read Data (03h)
tCLH,
(1)
tCLL
Clock High, Low Time for Read Data (03h)
instruction
tCRLH,
tCRLL
8
ns
(1)
(2)
Clock Rise Time peak to peak
Clock Fall Time peak to peak
/CS Active Setup Time relative to CLK
/CS Not Active Hold Time relative to CLK
Data In Setup Time
tCLCH
0.1
V/ns
V/ns
ns
(2)
tCHCL
0.1
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL
tCSS
5
5
ns
tDSU
tDH
2
ns
Data In Hold Time
5
ns
/CS Active Hold Time relative to CLK
/CS Not Active Setup Time relative to CLK
5
5
ns
ns
/CS Deselect Time (for Array Read Array Read /
Erase or Program Read Status Register)
tCSH
50/100
ns
(2)
Output Disable Time
tSHQZ
tDIS
tV
7
ns
ns
ns
Clock Low to Output Valid
2.7V-3.6V / 3.0V-3.6V
tCLQV
tCLQX
7/6
Output Hold Time
tHO
0
Continued – next page
Publication Release Date: August 7, 2009
Preliminary - Revision B
- 35 -
W25X32A
11.7 AC Electrical Characteristics (cont’d)
SPEC
DESCRIPTION
SYMBOL ALT
UNIT
MIN
5
TYP
MAX
/HOLD Active Setup Time relative to CLK
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
tHLCH
tCHHH
tHHCH
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
5
5
tCHHL
5
(2)
tHHQX
tLZ
7
(2)
/HOLD to Output High-Z
tHLQZ
tWHSL
tSHWL
tHZ
12
(3)
(3)
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
20
100
(2)
tDP
3
3
/CS High to Standby Mode without Electronic
Signature Read
tRES1(2)
tRES2(2)
/CS High to Standby Mode with Electronic
Signature Read
1.8
µs
Write Status Register Time
Byte Program Time (First Byte) (4)
Additional Byte Program Time (After First Byte) (4)
Page Program Time
tW
tBP1
tBP2
tPP
tSE
tBE
tCE
10
30
15
50
12
3
ms
µs
µs
ms
ms
s
6
1.6
120
0.32
20
Sector Erase Time (4KB)
200
1
Block Erase Time (64KB)
Chip Erase Time
40
s
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N =
number of bytes programmed.
- 36 -
W25X32A
11.8 Serial Output Timing
11.9 Input Timing
11.10 Hold Timing
Publication Release Date: August 7, 2009
Preliminary - Revision B
- 37 -
W25X32A
12 PACKAGE SPECIFICATION
12.1 8-Pin SOIC 208-mil (Package Code SS)
MILLIMETERS
SYMBOL
INCHES
NOM
MIN
NOM
MAX
MIN
MAX
A
A1
A2
b
C
D
D1
E
E1
e
H
L
1.75
0.05
1.70
0.35
0.19
5.18
5.13
5.18
5.13
1.95
0.15
1.80
0.42
0.20
5.28
5.23
5.28
5.23
1.27 BSC
7.90
0.65
-
2.16
0.25
1.91
0.48
0.25
5.38
5.33
5.38
5.33
0.069
0.002
0.067
0.014
0.007
0.204
0.202
0.204
0.202
0.077
0.006
0.071
0.017
0.008
0.208
0.206
0.208
0.206
0.050 BSC
0.311
0.026
-
0.085
0.010
0.075
0.019
0.010
0.212
0.210
0.212
0.210
7.70
0.50
-
8.10
0.80
0.010
8°
0.303
0.020
-
0.319
0.031
0.004
8°
y
θ
0°
-
0°
-
Notes:
1. Controlling dimensions: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D1 and E1 do not include mold flash protrusions and should be measured from the bottom of the package.
4. Formed leads coplanarity with respect to seating plane shall be within 0.004 inches.
- 38 -
W25X32A
12.2 8-Contact 6x5mm WSON (Package Code ZP)
MILLIMETERS
SYMBOL
INCHES
MIN
0.70
0.00
TYP.
0.75
0.02
MAX
0.80
0.05
MIN
TYP.
0.0295
0.0007
MAX
A
0.0275
0.0000
0.0314
0.0019
A1
b
C
0.35
-
0.40
0.20 REF.
6.00
0.48
-
0.0137
-
0.0157
0.0078 REF.
0.2362
0.0188
-
D
5.90
3.35
4.90
4.25
6.10
3.45
5.10
4.35
0.2322
0.1318
0.1929
0.1673
0.2401
0.1358
0.2007
0.1712
D2
E
3.40
0.1338
5.00
0.1968
4.30
0.1692
E2
(2)
1.27 BSC
0.0500 BSC
E
L
y
0.55
0.00
0.60
-
0.65
0.75
0.0216
0.0000
0.0236
-
0.0255
0.0029
Publication Release Date: August 7, 2009
Preliminary - Revision B
- 39 -
W25X32A
8-Contact 6x5mm WSON Cont’d.
MILLIMETERS
INCHES
TYP.
SYMBOL
MIN
TYP.
MAX
MIN
MAX
SOLDER PATTERN
M
N
P
3.40
4.30
6.00
0.50
0.75
0.1338
0.1692
0.2360
0.0196
0.0255
Q
R
Notes:
1. Advanced Packaging Information; please contact Winbond for the latest minimum and maximum specifications.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package.
4. The metal pad area on the bottom center of the package is connected to the device ground (GND pin). Avoid placement of
exposed PCB vias under the pad.
- 40 -
W25X32A
12.3 16-Pin SOIC 300-mil (Package Code SF)
MILLIMETERS
SYMBOL
INCHES
NOM
MIN
NOM
MAX
MIN
MAX
A
A1
A2
b
C
D
2.36
0.10
-
0.33
0.18
10.08
10.01
7.39
2.49
-
2.64
0.30
-
0.51
0.28
10.49
10.64
7.59
0.093
0.004
-
0.013
0.007
0.397
0.394
0.291
0.098
-
0.104
0.012
-
0.020
0.011
0.413
0.419
0.299
2.31
0.41
0.23
10.31
10.31
7.49
0.091
0.016
0.009
0.406
0.406
0.295
E
E1
2
1.27 BSC
0.50 BSC
E
L
y
θ
0.38
-
0°
0.81
-
-
1.27
0.076
8°
0.015
-
0°
0.032
-
-
0.050
0.003
8°
Notes:
1. Controlling dimensions: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package.
Publication Release Date: August 7, 2009
Preliminary - Revision B
- 41 -
W25X32A
12.4 8-Contact 8x6mm WSON (Package Code ZE)
MILLIMETERS
SYMBOL
INCHES
MIN TYP.
MAX
0.80
0.05
MIN
TYP.
MAX
A
0.70
0.00
0.75
0.02
0.02755
0.0000
0.02952
0.00078
0.03149
0.00196
A1
b
C
0.35
0.19
7.90
4.60
5.90
5.15
0.40
.0.20
8.00
0.48
0.25
8.10
4.70
6.10
5.25
0.01377
0.00748
0.31102
0.18110
0.23228
0.20275
0.01574
0.00787
0.31496
0.18307
0.23622
0.20472
0.05000 BSC
0.01889
0.00984
0.31889
0.18503
0.24015
0.20669
D
D2
E
4.65
6.00
E2
e
5.20
1.27 BSC
L
0.45
0.50
0.55
0.01771
0.01968
0.02165
- 42 -
W25X32A
13 ORDERING INFORMATION (1)
32A
=
32M-bit
V
=
2.7V to 3.6V
SS
SF
ZP
=
=
=
8-pin SOIC 208-mil
16-pin SOIC 300-mil
8-pad WSON 6x5mm
ZE(2)
=
8-pad WSON 8x6mm
Notes:
1a
Only the 2nd letter is used for the part marking; WSON package type ZP is not used for the top marking.
1b.
Standard bulk shipments are in Tube (shape E). Please specify alternate packing method, such as Tape and
Reel (shape T), when placing orders.
1c.
2.
The “W” prefix is not included on the part marking.
Package Type ZE (WSON-8 8x6mm) is a special order item, please contact Winbond for availability.
Publication Release Date: August 7, 2009
- 43 -
Preliminary - Revision B
W25X32A
13.1 Valid Part Numbers and Top Side Marking
The following table provides the valid part numbers for the W25X32A SpiFlash Memory. Please contact
Winbond for specific availability by density and package type. Winbond SpiFlash memories use an 12-
digit Product Number for ordering. However, due to limited space, the Top Side Marking on all packages
use an abbreviated 9 or 10-digit number depending on package type..
PACKAGE TYPE
DENSITY
32M-bit
PRODUCT NUMBER
W25X32AVSSIG
TOP SIDE MARKING
25X32AVSIG
SS
SOIC-8 208mil
SF
32M-bit
W25X32AVSFIG
25X32AVFIG
SOIC-16 300mil
ZP(1)
32M-bit
32M-bit
W25X32AVZPIG
W25X32AVZEIG
25X32AVIG
25X32AVIG
WSON-8 6x5mm
ZE(1)(2)
WSON-8 8x6mm
Notes:
1. For WSON packages, the package type ZP and ZE are not used in the top side marking.
2. Package type ZE (WSON-8 8x6mm) is a special order package, please contact Winbond for ordering
information.
- 44 -
W25X32A
14 REVISION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
New Create Preliminary
A
08/24/08
All
Changed references from 75MHz to 100MHz
where appropriate.
Remove PDIP8
Added WSON-8 8X6mm Special Order
Added WSON-8 6x5mm
4, 5, 6 32, 34,
36, 40,43~45
B
08/07/09
Update Package Diagrams
Updated Ordering Information
Preliminary Designation
The “Preliminary” designation on a Winbond datasheet indicates that the product is not fully
characterized. The specifications are subject to change and are not guaranteed. Winbond or an
authorized sales representative should be consulted for current information before using this product.
Trademarks
Winbond and SpiFlash are trademarks of Winbond Electronics Corporation.
All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in systems
or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for
other applications intended to support or sustain life. Further more, Winbond products are not intended
for applications wherein failure of Winbond products could result or lead to a situation wherein personal
injury, death or severe property or environmental damage could occur. Winbond customers using or
selling these products for use in such applications do so at their own risk and agree to fully indemnify
Winbond for any damages resulting from such improper use or sales.
Information in this document is provided solely in connection with Winbond products. Winbond reserves
the right to make changes, corrections, modifications or improvements to this document and the products
and services decribed herein at any time, without notice.
Publication Release Date: August 7, 2009
- 45 -
Preliminary - Revision B
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