1N4148 [WINNERJOIN]

High-speed switching diode;
1N4148
型号: 1N4148
厂家: SHENZHEN YONGERJIA INDUSTRY CO.,LTD    SHENZHEN YONGERJIA INDUSTRY CO.,LTD
描述:

High-speed switching diode

二极管
文件: 总3页 (文件大小:134K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RoHS  
1N4148  
High-speed switching diode  
Features  
1. High reliability  
2. High speed (trr4 ns)  
Applications  
Extreme fast switches  
Construction  
Silicon epitaxial planar  
Absolute Maximum Ratings  
Tj=25℃  
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Test Conditions  
Type  
Symbol  
VRRM  
VR  
Value  
100  
Unit  
V
75  
V
Peak forward surge current  
Repetitive peak forward current  
Forward current  
tp=1μs  
IFSM  
IFRM  
IF  
2
A
500  
mA  
mA  
mA  
mW  
300  
Average forward current  
Power dissipation  
VR=0  
IFAV  
PV  
150  
I=4mm TL25℃  
500  
Junction temperature  
Tj  
175  
Storage temperature range  
Tstg  
-65~+175  
Maximum Thermal Resistance  
Tj=25℃  
Parameter  
Test Conditions  
I=4mm T =constant  
Symbol  
R
Value  
350  
Unit  
K/W  
Junction ambient  
WEJ ELECTRONIC CO.,LTD  
L
thJA  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  
RoHS  
1N4148  
Figure 3. Forward current vs. forward voltage  
Figure 4. Reverse current vs. reverse voltage  
Dimensions in mm  
Cathode identification  
φ0.55 max.  
Cathode  
Anode  
φ2.0 max.  
26 min.  
4.2 max.  
26 min.  
Standard Glass Case  
JEDEC DO 35  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  
RoHS  
1N4148  
Electrical Characteristics  
Tj=25℃  
Parameter  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
IF=5mA  
1N4448  
1N4148  
1N4448  
VF  
VF  
VF  
IR  
0.62  
0.72  
1
V
V
IF=10mA  
0.86  
0.93  
IF=100mA  
1
V
Reverse current  
VR=20V  
25  
50  
5
nA  
μA  
μA  
V
VR=20V, Tj=150℃  
VR=75V  
IR  
IR  
Breakdown voltage  
Diode capacitance  
IR=100μA,tp/T=0.01,tp=0.3ms  
VR=0, f=1MHz, VHF=50mV  
VHF=2V, f=100MHz  
IF= IR=10mA, iR=1mA  
IF=10mA, VR=6V, iR=0.1×IR,  
RL=100Ω  
V(BR)  
CD  
ηR  
trr  
100  
45  
4
pF  
%
Rectification efficiency  
Reverse recovery time  
8
4
ns  
ns  
trr  
Characteristics (Tj=25unless otherwise specified)  
Figure 1. Forward voltage vs. junction temperature  
Figure 2. Forward current vs. forward voltage  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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