2N5172 [WINNERJOIN]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | 2N5172 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
2N5172
2N5172 TRANSISTOR (NPN)
TO—92
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
Power dissipation
PCM : 0.625 W (Tamb=25℃)
Collector current
ICM : 0.5
Collector-base voltage
(BR)CBO : 25
A
1 2 3
V
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
V(BR)CBO
V(BR)CEO
Test conditions
MIN
25
25
5
TYP
MAX
UNIT
V
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Ic= 10µA, IE=0
Ic= 10 mA, IB=0
V
V(BR)EBO
ICBO
V
Emitter-base breakdown voltage
Collector cut-off current
IE= 10µA, IC=0
VCB= 25V, IE=0
0.1
0.1
µA
µA
IEBO
VEB= 5 V, IC=0
Emitter cut-off current
hFE
VCE= 10V, IC= 10mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
100
500
0.25
1.2
DC current gain
VCE(sat)
VBE(sat)
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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