2N6520 [WINNERJOIN]
TRANSISTOR (PNP); 晶体管（ PNP ）
| 型号： | 2N6520 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | TRANSISTOR (PNP) |
| 文件： | 总1页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
2N6520
2N6520
TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
PCM : 0.625
1. EMITTER
2. BASE
W (Tamb=25℃)
3. COLLECTOR
Collector current
ICM
Collector-base voltage
(BR)CBO : -350
:
-0.5
A
1 2 3
V
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Test conditions
Ic= -100 µA , IE=0
IC= -1 mA , IB=0
IE= -10 µA, IC=0
VCB= -250 V , IE=0
VEB= -4 V , IC=0
MIN
-350
-350
-5
TYP
MAX
UNIT
V
Parameter
V(BR)CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
*
V
V(BR)CEO
V(BR)EBO
V
ICBO
IEBO
-0.05
-0.05
µA
µA
Emitter cut-off current
V
CE=-10 V, IC= -1 mA
VCE=-10 V, IC= -10 mA
VCE=-10 V, IC= -30 mA
VCE=-10 V, IC= -50 mA
VCE=-10 V, IC= -100 mA
IC= -10 mA, IB= -1 mA
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
IC= -50 mA, IB= -5 mA
IC= -10 mA, IB= -1 mA
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
20
30
30
20
15
hFE
DC current gain
200
200
-0.3
-0.35
-0.5
-1
VCE(sat)
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
-0.75
-0.85
-0.9
VBE(sat)
WEJ ELECTRONIC CO.,LTD
VBE(on)
VCE=-10V, IC= -100 mA
-2
V
Base-emitter voltage
VCE=-20 V, IC= -10 mA
f =20 MHz
*
40
200
MHz
Transition frequency
f T
* Pulse test, Pulse width≤300µs, Duty cycle≤2%.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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