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BC817-16 [WINNERJOIN]

NPN EPTTAXIAL SILICON TRANSISTOR; NPN EPTTAXIAL硅晶体管
BC817-16
型号： BC817-16
厂家： SHENZHEN YONGERJIA INDUSTRY CO.,LTD    SHENZHEN YONGERJIA INDUSTRY CO.,LTD
描述：

NPN EPTTAXIAL SILICON TRANSISTOR
NPN EPTTAXIAL硅晶体管

晶体 晶体管
文件： 总2页 (文件大小：225K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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RoHS  
B C 8 1 7 - 1 6 / - 2 5 / 4 0  
NPN EPTTAXIAL SILICON TRANSISTOR  
SURFACE MOUNT SMALL  
SIGANL TRANSISTORS  
(Ta=25oC)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Rating  
Unit  
Characteristic  
Collector-Emitter Voltage  
V
V
CEO  
V
45  
50  
V
Emitter-Base Voltage  
Collector Current  
CBO  
mA  
mA  
mA  
Ic  
Ic  
1000  
1000  
800  
M
Peak Colteetor Current  
Peak Fmitter Current  
Power Dissipation Tsb=50oC(Note1)  
Junction Temperature  
Storage Temperature  
I
EM  
P
T
T
D
310  
mW  
O C  
O C  
j
150  
stg  
-65~150  
(Ta=25oC)  
ELECTRICAL CHARACTERISTICS  
Charactcristic  
Symbol MIN. TYP. MAX. Unit  
Test Conditions  
DC Current Gain Current Gain Group-16  
-10  
160  
250  
60  
250  
400  
600  
V
V
C
e
=1.0V, I  
C
=100mA  
-25  
-40  
Hfe  
Current Gain Group-16  
C
e
=1.0V, I  
C
=300mA  
-25  
-40  
100  
170  
Collector-Emitter Saturation Voltage  
I
C
=500mA, I  
B
=50mA  
Vce(sat)  
0.7  
1.2  
100  
5.0  
100  
Base-  
V
bc  
V
V
V
V
V
C
C
C
e
e
e
=1.0V, I  
=45V,  
=25V, Tj=150o  
C
=300mA  
Emitter Voltage  
Collector-Emitter Cutoff  
Current  
I
I
ces  
ebo  
Emitter-Base Cutoff Current  
Gain Bandwidth Product  
eb=4.0V  
=5V, I =10mA  
C
e
C
100  
f
T
f=50MHz  
=10V,f=1.0MHz  
V
Cb  
Collector-Base Capacitanee  
C
cbo  
12  
WEJ ELECTRONIC CO.,LTD  
Note:Device mounted on ceramic substrate 0.7mmX2.5mm2 area.  
DEVICE MARKING:  
BC817-16=6A  
BC817-25=6B  
BC817-40=6C  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.,LTD  
RoHS  
B C 8 1 7 - 1 6 / - 2 5 / 4 0  
Typical Characteristics  
Typical Pulsed Current Gain  
vs Collector Current  
Collector -Emitter Saturation  
Voltage vs Collector Current  
400  
0.6  
VcE=5V  
-40oC  
25oC  
0.5  
0.4  
300  
125oC  
200  
0.3  
25oC  
125oC  
0.2  
0.1  
0
100  
-40oC  
0
0.01  
0.1  
1
0.01  
0.1  
1
1.5  
Ic，COLLECTOR CURRENT (A)  
IC-COLLECTOR CURRENT(A)  
Base-Emitter Saturation  
Voltage vs Collector Current  
Gain Bandwidth Product  
vs Collector Current  
250  
200  
150  
100  
50  
1
VcE=10V  
0.8  
0.6  
0.4  
-40oC  
25oC  
125oC  
0
1
10  
100  
1000  
1
10  
100  
1000  
IC-COLLECTOR CURRENT(mA)  
IC-COLLECTOR CURRENT(mA)  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.,LTD  

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