BCW61BLT1 [WINNERJOIN]
SOT-23 Plastic-Encapsulate Transistors; SOT- 23塑封装晶体管
| 型号： | BCW61BLT1 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | SOT-23 Plastic-Encapsulate Transistors |
| 文件： | 总1页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
BCW61B
SOT-23 Plastic-Encapsulate Transistors
BCW61B TRANSISTOR (PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM:
2. 4
1. 3
0.25 W (Tamb=25℃)
Collector current
ICM:
-0.2
A
Collector-base voltage
V(BR)CBO:
-32
V
Unit: mm
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= -10µA, IE=0
Ic= -1mA, IB=0
MIN
-32
-32
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=-10µA, IC=0
VCB=-32V, IE=0
VEB=-4V, IC=0
-0.02
-0.02
µA
µA
IEBO
Collector cut-off current
hFE
VCE=-5V, IC= -2mA
IC=-50mA, IB=-1.25mA
IC=-50mA, IB=-1.25mA
180
310
DC current gain
VCE(sat)
VBE(sat)
-0.55
-1.05
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE= -5V, IC=-10mA
f=100MHz
100
MHz
Transition frequency
fT
Marking
BB
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