BD140 [WINNERJOIN]
TRANSISTOR (PNP); 晶体管( PNP )![BD140](http://pdffile.icpdf.com/pdf2/p00216/img/icpdf/BD140_1225533_icpdf.jpg)
型号: | BD140 |
厂家: | ![]() |
描述: | TRANSISTOR (PNP) |
文件: | 总1页 (文件大小:126K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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RoHS
BD136/138/140
BD136/BD138/BD140 TRANSISTOR (PNP)
TO-126
FEATURES
Power dissipation
PCM:
1.25
-1.5
W (Tamb=25℃)
1. EMITTER
Collector current
ICM:
2. COLLECTOR
3. BASE
A
1 2 3
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
BD136
MIN
-45
-60
-80
-45
-60
-80
-5
TYP
MAX
UNIT
V(BR)CBO
V
Collector-base breakdown voltage
BD138
BD140
BD136
BD138
BD140
Ic=-100µA, IE=0
Ic=-30mA, IB=0
V(BR)CEO
V
Collector-emitter breakdown voltage
V(BR)EBO
ICBO
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
IE=-100µA, IC=0
CB=-30V, IE=0
µA
µA
V
-0.1
-10
IEBO
VEB=-5V, IC=0
hFE(1)
V
CE=-2V, IC=-5Ma
25
40
BD136
250
160
DC current gain
hFE(2)
V
CE=-2V, IC=-150mA
BD138
BD140
40
25
hFE(3)
VCE(sat)
VBE
V
CE=-2V, IC=-500mA
IC=-500mA, IB=-50mA
CE=-2V, IC=-500mA
V
V
Collector-emitter saturation voltage
Base-emitter voltage
-0.5
-1
V
WEJ ELECTRONIC CO.,LTD
CLASSIFICATION OF hFE(2)
Rank
6
10
16
Range
40-100
63-160
100-250
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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CENTRAL
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