DO-35 [WINNERJOIN]

For general purpose applicationsnull; 对于通用applicationsnull
DO-35
型号: DO-35
厂家: SHENZHEN YONGERJIA INDUSTRY CO.,LTD    SHENZHEN YONGERJIA INDUSTRY CO.,LTD
描述:

For general purpose applicationsnull
对于通用applicationsnull

文件: 总2页 (文件大小:75K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RoHS  
1N6263  
DO-35  
FEATURES  
For general purpose applications  
Metal-on-silicon junction Schottky barrier which is protected by a PN  
junction guard ring.The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,steering,biasing and  
coupling diodes for fast switching and low logic level applications  
These diodes are also available in the Mini-MELF case with type  
designation LL6263,in the Micro-MELF case with type designation  
MCL6263  
0.02(0.52)  
MAX  
DIA  
0.079(2.0)  
MAX  
DIA  
MECHANICAL DATA  
Case:DO-35 Glass CASE  
Polarity:Color band denotes cathode end  
Weight:Approx.0.13gram  
Dimensions in inches and (millimeters)  
ABSOLUTE RATINGS(LIMITING VALUES)  
SYMBOLS  
VALUE  
60  
UNITS  
Peak Reverse Voltage  
V
RRM  
V
mV  
A
P
tot  
400  
Power Dissipation (infinite Heat Sink)  
I
FSM  
Maximum Single cycle surge 10 s square ware  
2.0  
O
T
J
Junction Temperature  
125  
C
O
T
STG  
-55 to +150  
Storage Temperature Range  
C
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS  
O
C
(Ratings at 25 ambient temperature unless otherwise specified)  
SYMBOLS  
Min.  
TYP.  
MAX.  
UNITS  
Reverse Breakover Voltage at IR=10 A  
Leakage Current at VR=50V  
V
R
V
60  
I
R
200  
nA  
V
Forward voltage drop at IF=1mA  
IF=15mA  
0.41  
1.0  
V
F
WEJ ELECTRONIC CO.,LTD  
C
J
pF  
ns  
2.0  
1
Junction Capacitance at VR=0V,f=1MHz  
Reverse Recovery time at IF=IR=5mA,  
recover to 0.1 IR  
T
rr  
R
JA  
K/W  
Thermal resistance  
0.3  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  
RoHS  
1N6263  
Fig.1 Typical variation of forward. Current vs forward.voltage  
for primary conduction through the Schottky barrier  
Fig.2 Typical forward conduction curve of combination  
Schottky barrier and PN iunction guard ring  
mA  
10  
mA  
100  
5
80  
60  
2
1
5
2
IF  
IF  
40  
0.1  
5
20  
2
0.01  
0
0
0.5  
1V  
0
0.5  
VF  
1V  
VF  
Fig.3 Typical variation of reverse current at  
various temperatures  
Fig.4 Typical variation curve as a function of  
reverse voltage  
mA  
100  
PF  
2
O
C
150  
O
5
125 C  
T
=25oC  
j
2
O
100 C  
10  
5
O
75 C  
2
1
1
O
C
50  
CJ  
IR  
5
2
0.1  
5
25  
O
C
2
0.01  
0
0
10  
20  
30  
40  
50V  
0
10  
20  
30  
VR  
40  
50V  
VR  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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