KTB1366 [WINNERJOIN]
TRANSISTOR (PNP); 晶体管（ PNP ）
| 型号： | KTB1366 |
| 厂家： | 
SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
| 描述： | TRANSISTOR (PNP) |
| 文件： | 总1页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
KTB1366
TO-220F
1. BASE
KTB1366 TRANSISTOR (PNP)
2. COLLECTOR
3. EMITTER
FEATURES
Power dissipation
PCM:
2
W (Tamb=25℃)
1 2 3
Collector current
ICM:
-3
A
V
Collector-base voltage
V(BR)CBO
:
-60
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=-1mA, IE=0
MIN
-60
-60
-7
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
Ic=-50mA, IB=0
IE=-1mA, IC=0
V
µA
µA
VCB=-60V, IE=0
-100
-100
200
IEBO
Emitter cut-off current
VEB=-7V, IC=0
hFE(1)
VCE=-5V, IC=-0.5A
60
20
DC current gain
hFE(2)
VCE=-5V, IC=-3A
VCE(sat)
V
V
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Fall time
IC=-2A, IB=-0.2A
-1
-1
VBE
VCE=-5V, IC=-0.5A
MHz
pF
µs
fT
VCE=-5V, IC=-0.5A
9
Cob
tf
V
CB=-10V, IE=0, f=1MHz
150
0.5
IC=-2A, IB1=-IB2=-0.2A
CC=-30V
V
ts
µs
Storage time
1.7
WEJ ELECTRONIC CO.,LTD
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
Marking
60-120
100-200
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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