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MMBT5551LT1 [WINNERJOIN]

NPN EPITAXIAL SILICON TRANSISTOR; NPN外延硅晶体管
MMBT5551LT1
型号： MMBT5551LT1
厂家： SHENZHEN YONGERJIA INDUSTRY CO.,LTD    SHENZHEN YONGERJIA INDUSTRY CO.,LTD
描述：

NPN EPITAXIAL SILICON TRANSISTOR
NPN外延硅晶体管

晶体 晶体管
文件： 总2页 (文件大小：153K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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RoHS  
M M B T 5 5 5 1 L T 1  
NPN EPITAXIAL SILICON TRANSISTOR  
SOT-23  
3
HIGH VOLTAGE TRANSISTOR  
Collector Dissipation:Pc-225mW(Ta=25o)  
1
Collector-Emiller Voltage:VCEO=160V  
2
1.  
1.BASE  
2.EMITTER  
2.4  
1.3  
3.COLLECTOR  
Unit:mm  
(Ta=25oC)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Rating  
Unit  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
V
V
CBO  
CEO  
EBO  
V
V
180  
160  
V
Emitter-Base Voltage  
Collector Current  
6
mA  
Ic  
600  
Collector Dissipation Ta=25oC*  
Junction Temperature  
Storage Temperature  
P
T
T
D
mW  
225  
O C  
O C  
j
150  
stg  
-55~150  
(Ta=25oC)  
Electrical Characteristics  
Parameter  
Symbol MIN. TYP.MAX. Unit  
Condition  
V
V
180  
160  
6
BVCBO  
BVCEO  
BVEBO  
I
I
I
C
C
E
=100 A I =0  
E
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage#  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
Emitter-Base Cutoff Current  
DC Current Gain  
=1mA I  
=10 A I  
B
=0  
V
C
=0  
I
I
CBO  
50  
50  
nA  
nA  
V
V
V
V
V
CB=120V, V =0  
C
EBO  
CB=4V, I  
CE=5V, I  
CE=5V, I  
CE=5V, I  
C
C
C
C
=0  
=1mA  
h
h
h
FE1  
FE2  
FE3  
80  
80  
30  
DC Current Gain  
=-10mA  
=50mA  
DC Current Gain  
250  
0.5  
0.15  
1
V
V
V
V
CE(sat)  
CE(sat)  
BE(sat)  
BE(sat)  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
I
I
I
I
C
C
C
C
=50mA, I  
=10mA, I  
=50mA, I  
=10mA, I  
B
B
B
B
=5mA  
=1mA  
=1mA  
=1mA  
V
V
1
V
WEJ ELECTRONIC CO.,LTD  
Current Gain-Bandwidth Product  
f
T
MHz  
100  
300  
V
CE=10V, I =10mA,f=100MHz  
C
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC  
# Pulse Test: Pulse Width 300uS Duty cycle 2%  
DEVICE MARKING:  
2N5551S=Z1  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  
RoHS  
M M B T 5 5 5 1 L T 1  
Typical Characteristics  
500  
VCE=1.0V  
VCE=5.0V  
TJ=125。C  
300  
200  
+25。C  
100  
-55。C  
50  
30  
20  
10  
7.0  
5.0  
0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
20  
30  
50  
70 100  
IC,COLLECTOR CURRENT (mA)  
DC Current Gain  
1.0  
TJ=25。C  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
IC=1.0mA  
10mA  
30mA  
100mA  
0
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
IB,BASE CURRENT (mA)  
Collector Saturation Region  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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