MCK100-6 [WINSEMI]
Silicon Controlled Rectifiers; 可控硅整流器器
| 型号： | MCK100-6 |
| 厂家： | 
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD |
| 描述： | Silicon Controlled Rectifiers |
| 文件： | 总5页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCK100-6
Sensitive Gate
Silicon Controlled Rectifiers
Features
■ Sensitive gate trigger current: IGT=200uA maximum
■ Low on-state voltage: VTM=1.2(typ.)@ ITM
■ Low reverse and forward blocking current:
IDRM/IPRM=100uA@TC=125℃
■ Low holding current: IH=5mA maximum
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as microcontrollers, logic integrated
circuits, small motor control, gate driver for large SCR, sensing
and detecting circuits.
General purpose switching and phase control applications
Absolute Maximum Ratings (Tj=25℃ unless otherwise specified)
Symbol
Parameter
Value Units
VDRM/VRRM
IT(RMS)
Repetitive peak off-state voltage
Note(1)
TI=85℃
400
0.8
0.5
9
V
A
A
RMS on-state current (180o conduction angles)
Average on-state current (80o conduction angles )
IT(AV)
TI=85℃
tp = 8.3 ms
tp = 10 ms
tp = 8.3 ms
ITSM
Non repetitive surge peak on-state current
A
8
I2t
I²t Value for fusing
0.41
2
A2s
W
PGM
Peak gate power
Critical rate of rise of on-state current
ITM = 2A; IG = 10mA; dIG/dt = 100mA/µs
Average gate power dissipation
Peak gate current
dI/dt
TJ=125℃
50
A/μs
PG(AV)
IFGM
VRGM
TJ,
TJ=125℃
TJ=125℃
TJ=125℃
0.1
1
W
A
Peak gate voltage
5
V
Junction temperature
-40~125
-40~150
℃
℃
Tstg
Storage temperature
Note1: Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.
Thermal Characteristics
Value
Typ
-
Symbol
Parameter
Units
Min
-
Max
60
RQJC
RQJA
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
℃/W
℃/W
-
-
150
Rev. A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
MCK100-6
Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified)
Characteristics
Symbol
IDRM/IRRM
Min
-
Typ.
-
Max
Unit
μA
Tc=25℃
1
off-state leakage current
(V AK= V /VRRM
)
DRM
Tc=125℃
100
Forward “On” voltage (ITM = 1A tp = 380μs)
(Note2.1)
VTM
-
1.2
-
1.7
V
Gate trigger current (continuous dc)
(VAK = 7 Vdc, RL = 100 Ω)
(Note2.2)
(Note2.2)
IGT
15
200
μA
Gate Trigger Voltage (Continuous dc)
(VAK = 7 Vdc, RL = 100 Ω)
VGT
VGD
-
-
-
0.8
V
V
Gate threshold Voltage
(Note2.1)
0.2
-
-
TJ=125℃
500
800
25
Voltage Rate of Rise Off-State Voltage
(VD=0.67VDRM ;exponential waveform)
dv/dt
V/μs
Gate open circuit
Holding Current (VD = 12 V; IGT = 0.5 mA)
latching current (VD = 12 V; IGT = 0.5 mA)
Dynamic resistance
IH
IL
-
-
-
2
2
-
5
6
mA
mA
mΩ
TJ=125℃
Rd
245
Note 2.1 Pulse width≤1.0ms,duty cycle≤1%
2.2 RGK current is not included in measurement.
2/5
Steady, keep you advance
MCK100-6
3/5
Steady, keep you advance
MCK100-6
4/5
Steady, keep you advance
MCK100-6
SPT-89 Package Dimension
5/5
Steady, keep you advance
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