SFF7N60 [WINSEMI]
Silicon N-Channel MOSFET; 硅N沟道MOSFET
| 型号： | SFF7N60 |
| 厂家： | 
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD |
| 描述： | Silicon N-Channel MOSFET |
| 文件： | 总7页 (文件大小：668K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF7N60
Silicon N-Channel MOSFET
Features
■ 7A,600V,RDS(on)(Max 1.0Ω)@VGS=10V
■
■
■
Ultra-low Gate Charge(Typical 29nC)
Fast Switching Capability
100%Avalanche Tested
■ Isolation Voltage(VISO=4000V AC)
■
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast,high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
Value
600
7*
Units
V
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
4.1*
26
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
240
15
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
mJ
mJ
V/ ns
W
EAR
dv/dt
4.5
48
PD
0.38
-55~150
300
W/℃
℃
TJ,Tstg
TL
℃
*Drain current limited by junction temperature
Thermal Characteristics
Value
Symbol
Parameter
Units
Min
Typ
Max
2.6
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
-
-
℃
/W
/W
-
-
62.5
℃
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
SFF7N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
Min Type Max Unit
Gate leakage current
-
-
-
-
±100
-
nA
V
Gate-source breakdown voltage
Drain cut -off current
V(BR)GSS
±30
VDS=600V,VGS=0V
-
10
µA
µA
V
IDSS
VDS=480V,Tc=125℃
-
100
-
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
V(BR)DSS
VGS(th)
RDS(ON)
gfs
ID=250 µA,VGS=0V
VDS=10V,ID=250 µA
VGS=10V,ID=3.5A
VDS=50V,ID=3.5A
VDS=25V,
600
-
-
2
-
-
-
-
-
-
-
-
-
4
V
0.8
8.7
1100
15
1.0
-
Ω
S
Ciss
1430
20
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
tr
pF
ns
f=1MHz
135
30
175
70
Rise time
VDD=200V,
ID=7.0A
，
Turn-on time
Switching time
ton
80
170
140
130
RG=25Ω，
Fall time
tf
65
(Note4,5)
Turn-off time
Total gate charge(gate-source
plus gate-drain)
toff
60
VDD=480V,
VGS=10V,
ID=7.0A
Qg
-
29
38
nC
Gate-source charge
Qgs
Qgd
-
-
7
-
-
(Note4,5)
Gate-drain("miller") Charge
14.5
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse drain reverse current
Forward voltage(diode)
Reverse recovery time
IDR
IDRP
VDSF
trr
-
-
-
-
-
-
-
-
-
7.0
28
1.4
-
A
A
IDR=7.4A,VGS=0V
IDR=7.4A,VGS=0V,
dIDR / dt =100 A / µs
-
V
320
2.4
ns
µC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=7A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤7.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
SFF7N60
Fig.1 On-State Characteristics
Fig.2 Transfer Current characteristics
Fig.4 Body Diode Forward Voltage
Variation with Source Current
and temperature
Fig.3 On Resistance variation vs
Drain Current
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.6 Gate Charge Characteristics
3/7
Steady, keep you advance
SFF7N60
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response curve
4/7
Steady, keep you advance
SFF7N60
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
Steady, keep you advance
SFF7N60
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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SFF7N60
TO-220F Package Dimension
Unit:mm
7/7
Steady, keep you advance
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