SFU1N60 [WINSEMI]
Silicon N-Channel MOSFET; 硅N沟道MOSFET
| 型号： | SFU1N60 |
| 厂家： | 
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD |
| 描述： | Silicon N-Channel MOSFET |
| 文件： | 总7页 (文件大小：399K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFU1N60
Silicon N-Channel MOSFET
Features
■1.3A,600V, RDS(on)(Max 8.5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 9.1nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply. electronic
Lamp ballasts based on half bridge and UPS.
G
D
S
TO251
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
V
Drain Source Voltage
600
1.3
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
A
ID
0.84
5.0
A
IDM
VGS
EAS
(Note1)
A
Gate to Source Voltage
±30
78
V
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
(Note 2)
(Note 1)
(Note 3)
mJ
mJ
V/ns
W
EAR
dv/dt
3.9
Peak Diode Recovery dv/dt
5.5
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
32
PD
0.24
-55~150
300
W/℃
℃
TJ, Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
℃
Thermal Characteristics
Value
Typ
Symbol
Parameter
Units
Min
-
Max
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
-
-
-
3.9
℃/W
℃/W
℃/W
0.5
-
-
Thermal Resistance, Junction-to-Ambient
110
Rev. C Nov.2008
P01-3
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
SFU1N60
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Symbol
IGSS
Test Condition
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, Tc = 125°C
ID = 250 μA, VGS = 0 V
Min
Type
Max
±100
-
Unit
nA
V
-
±30
-
-
-
-
-
-
Gate−source breakdown voltage
V(BR)GSS
10
μA
μA
V
Drain cut−off current
IDSS
-
100
-
Drain−source breakdown voltage
V(BR)DSS
600
ΔBVDSS
/
Break Voltage Temperature
Coefficient
ID=250μA, Referenced to 25℃
-
0.5
-
V/℃
ΔTJ
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
VGS(th)
RDS(ON)
gfs
VDS = 10 V, ID =250 μA
VGS = 10 V, ID =0.65A
VDS = 40 V, ID =0.65A
VDS = 25 V,
2
-
-
-
-
-
-
-
-
-
-
4
8.5
-
V
Ω
S
7.7
1.3
247
23
Ciss
Crss
Coss
tr
318
30
6.4
26
72
59
59
Reverse transfer capacitance
Output capacitance
VGS = 0 V,
pF
f = 1 MHz
4.9
11
Rise time
VDD =300 V,
ID = 1.3 A
RG=25 Ω
Turn−on time
Switching time
ton
33
ns
Fall time
tf
26
(Note4,5)
Turn−off time
Total gate charge (gate−source plus
gate−drain)
toff
26
VDD = 480 V,
VGS = 10 V,
ID = 1.3 A
Qg
-
9.1
12
nC
Gate−source charge
Qgs
Qgd
-
-
1.2
4.5
-
-
(Note4,5)
Gate−drain (“miller”) Charge
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Symbol
IDR
Test Condition
Min
Type
Max
1.3
5.0
1.4
-
Unit
A
-
-
-
-
-
-
-
-
IDRP
-
A
VDSF
trr
IDR = 1.3A, VGS = 0 V
IDR = 1.3A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
V
Reverse recovery time
163
0.85
ns
μC
Reverse recovery charge
Qrr
-
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=92mH,IAS=1.3A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤1.3A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Copyright @ WinSemi Semiconductor Co.,Ltd., All rights reserved.
SFU1N60
Fig. 1 On-State Characteristics
Fig.2 Transfer Current Characteristics
Fig.3 On-Resistance Variation vs
Drain Current
Fig.5 On-Resistance Variation vs
Junction Temperature
Fig.6 Gate Charge Characteristics
3/7
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
SFU1N60
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
Copyright @ WinSemi Semiconductor Co.,Ltd., All rights reserved.
SFU1N60
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
SFU1N60
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
Copyright @ WinSemi Semiconductor Co.,Ltd., All rights reserved.
SFU1N60
TO251 Package Dimension
Unit: mm
7/7
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
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FAIRCHILD
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