STF25A60 [WINSEMI]
Bi-Directional Triode Thyristor; 双向晶闸管
| 型号： | STF25A60 |
| 厂家： | 
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD |
| 描述： | Bi-Directional Triode Thyristor |
| 文件： | 总5页 (文件大小：386K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STF25A60
Bi-Directional Triode Thyristor
Features
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Repetitive Peak Off -State Voltage:600V
R.M.S On-State Current(IT(RMS)=25A)
High Commutation dv/dt
Isolation Voltage (VISO=1500V AC)
General Description
This device is suitable for AC switching application,phase control
application such as fan speed and temperature modulation control,
lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
VDRM
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
condition
Ratings
600
Units
V
IT(RMS)
Tc=86℃
25
A
One Cycle, 50Hz/60Hz,
Peak,Non-Repetitive
ITSM
Surge On-State Current
225/250
A
I2t
PGM
PG(AV)
IGM
I2t
260
5.0
A2s
W
W
A
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
0.5
2.0
VGM
VISO
TJ
10
V
Isolation Breakdown voltage(R.M.S.) A.C 1 minute
Operating Junction Temperature
Storage Temperature
1500
-40~125
-40~150
6.2
V
℃
℃
g
TSTG
Mass
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
Thermal Resistance Junction to Case
1.3
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
STF25A60
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Ratin
Unit
Symbol
Items
conditions
Min Typ Max
Repetitive Peak Off-State
VD=VDRM,Single Phase, Half
Wave TJ=125℃
IDRM
VTM
-
-
5.0
mA
V
Current
Peak On-State Voltage
IT=35A,Inst.Measurement
-
-
-
-
-
-
-
-
-
1.4
30
30
30
1.5
1.5
1.5
-
I+
Ⅰ
-
GT1
I-GT1
I-GT3
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Gate Trigger Current
Gate Trigger Voltage
VD=6V,RL=10Ω
-
mA
V
-
V+
-
-
GT1
V-GT1
V-GT3
VGD
VD=6V,RL=10Ω
-
Non-Trigger Gate Voltage
TJ=125℃,VD=1/2VDRM
0.2
V
Critical Rate of Rise Off-State TJ=125℃,[di/dt]c=-12.5A/ms,
(dv/dt)c
IH
6
-
-
-
-
V/µs
mA
Voltage at Commutation
Holding Current
VD=2/3VDRM
35
2/5
Steady, all for your advance
STF25A60
Fig1.Gate Characteristics
Fig.2 On-State Voltage
Fig.3 On State Current vs.Maximum
Power Dissipation
Fig.4 On State Current vs.Allowable
Case Temperature
Fig.5Surge On-State Current Rating
(Non-Repetitive)
Fig.6 Gate Trigger Voltage vs.
Junction Temperature
3/5
Steady, all for your advance
STF25A60
Fig.7 Gate Trigger Current vs.
Junction Temperature
Fig.8 Transient Thermal Impedance
Fig.9 Gate Trigger Characteristics Test Circuit
4/5
Steady, all for your advance
STF25A60
TO-220F Package Dimension
Unit:mm
5/5
Steady, all for your advance
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