WTN1A80 [WINSEMI]
Bi-Directional Triode Thyristor; 双向晶闸管
| 型号： | WTN1A80 |
| 厂家： | 
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD |
| 描述： | Bi-Directional Triode Thyristor |
| 文件： | 总4页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WTN1A80
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage:800V
■
R.M.S On-State Current(I =1A
T(RMS)
■ Low on-state voltage: V =1.2(typ.)@ I
TM
TM
■ Low reverse and forward blocking current:
I
=500uA@TC=125℃
DRM
■ Low holding current: I =4mA (typ.)
H
■
High Commutation dV/dt.
General Description
General purpose switching and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
VDRM
IT(RMS)
ITSM
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t
condition
Ratings
800
Units
V
Tc=86℃
Full sine wave, 20/16.7ms
1
A
12.5/13.8
1.28
5.0
A
I2t
A2s
W
PGM
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
PG(AV)
IGM
0.5
W
2.0
A
VGM
Peak Gate Voltage
5
V
TJ
Operating Junction Temperature
Storage Temperature
125
℃
℃
TSTG
-40~150
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
Thermal Resistance Junction to Case
60
℃/W
Rev.A Aug.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WTN1A80
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Ratin
Unit
Symbol
Items
conditions
Min Typ Max
Repetitive Peak Off-State
Current
VD=VDRM,Single Phase, Half
Wave TJ=125℃
IDRM
VTM
-
0.1
0.5
mA
V
Peak On-State Voltage
IT=35A,Inst.Measurement
-
1.2
0.4
1.3
1.4
3.8
-
1.5
5
T2+G+
-
T2+G-
T2-G-
T2-G+
T2+G+
T2+G-
T2-G-
T2-G+
-
5
IGT
Gate Trigger Current
VD=12V,RL=100Ω
VD=12V,RL=100Ω
mA
-
5
-
7
-
1.5
1.5
1.5
1.5
-
-
-
-
V
VGT
Gate Trigger Voltage
-
-
-
VGD
dv/dt
IH
Non-Trigger Gate Voltage
TJ=125℃,VD=VDRM,RL=3.3KΩ
0.2
-
V
Critical Rate of Rise VD=67%VDRM(MAX)
Off-State
TJ=125℃,RGK=1KΩ
10
20
-
V/µs
mA
Voltage at Commutation
Holding Current
VD=12V, IGT=0.1A
-
-
-
-
-
1.3
1.2
4.0
1.0
2.5
5
5
5
8
5
T2+G+
T2+G-
T2-G-
T2-G+
IL
Latching current
VD=12V,IGT=0.1A
mA
µs
ITM=1.5A,VDM=VDRM(MAX)
,
tgt
Gate controlled turn-on time
-
2
-
IG=0.1A,dIG/dt=5A/µs
2/4
Steady, keep you advance
WTN1A80
Fig1. Ptot - IT(RMS)
Fig.2 ITSM - tP
Fig.3 IT(RMS) - Tmb
Fig.4 IT(RMS) - ts
Fig.6 VTM -IT
Fig.5 IGT(Tj)/IGT(25℃) -Tj
3/4
Steady, keep you advance
WTN1A80
TO-92 Package Dimension
Unit:mm
4/4
Steady, keep you advance
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