Toggle navigation
首页
加载中...
马上查询
×
马上查询
关闭背景特效
首页
|
元器件品牌
WFY3N02
[WINSEMI]
20V N?Channel MOSFET; 20V N沟道MOSFET
元器件型号：
WFY3N02
生产厂家：
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD
描述和应用：
20V N?Channel MOSFET
20V N沟道MOSFET
PDF文件：
总6页 (文件大小：279K)
下载文档：
下载PDF数据表文档文件
型号参数：WFY3N02参数
查看货源
WFY3P02
−20V, P−Channel MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
28
WINSEMI
WFY4101
Trench Power MOSFET −20 V, Single P−Channel, SOT−23
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
28
WINSEMI
WFY5N03
30V N?Channel MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
30
WINSEMI
WFY5P03
-30V P?Channel MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
18
WINSEMI
WFY6N02
20V N?Channel MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
20
WINSEMI
WG10008S
GATE TURN THYRISTORS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
24
ETC
WG10008S
GATE TURN THYRISTORS
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
8
ETC
WG10008S08
Symmetrical GTO SCR, 1160A I(T)RMS, 800V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
1
IXYS
WG10008S10
Gate Turn-Off SCR, 1160A I(T)RMS, 900V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IXYS
WG10008S12
Gate Turn-Off SCR, 1160A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IXYS
WG10008S12
Gate Turn-Off SCR, 1160A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IXYS
WG10008S14
Gate Turn-Off SCR, 1160A I(T)RMS, 1100V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IXYS
WG10008S16
Gate Turn-Off SCR, 1160A I(T)RMS, 1200V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IXYS
WG10008S18
Gate Turn-Off SCR, 1160A I(T)RMS, 1300V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IXYS
WG10008S18
Gate Turn-Off SCR, 1160A I(T)RMS, 1300V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
IXYS
©2020 ICPDF网
联系我们和版权申明
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD 
