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元器件品牌
WFY3P02
[WINSEMI]
−20V, P−Channel MOSFET; -20V ， P沟道MOSFET
元器件型号：
WFY3P02
生产厂家：
SHENZHEN WINSEMI MICROELECTRONICS CO., LTD
描述和应用：
−20V, P−Channel MOSFET
-20V ， P沟道MOSFET
PDF文件：
总5页 (文件大小：248K)
下载文档：
下载PDF数据表文档文件
型号参数：WFY3P02参数
查看货源
WFY4101
Trench Power MOSFET −20 V, Single P−Channel, SOT−23
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156
-
28
WINSEMI
WFY5N03
30V N?Channel MOSFET
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156
-
30
WINSEMI
WFY5P03
-30V P?Channel MOSFET
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156
-
18
WINSEMI
WFY6N02
20V N?Channel MOSFET
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156
-
20
WINSEMI
WG10008S
GATE TURN THYRISTORS
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156
-
24
ETC
WG10008S
GATE TURN THYRISTORS
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156
-
8
ETC
WG10008S08
Symmetrical GTO SCR, 1160A I(T)RMS, 800V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
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156
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1
IXYS
WG10008S10
Gate Turn-Off SCR, 1160A I(T)RMS, 900V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
IXYS
WG10008S12
Gate Turn-Off SCR, 1160A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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-
0
IXYS
WG10008S12
Gate Turn-Off SCR, 1160A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
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156
-
0
IXYS
WG10008S14
Gate Turn-Off SCR, 1160A I(T)RMS, 1100V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
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156
-
0
IXYS
WG10008S16
Gate Turn-Off SCR, 1160A I(T)RMS, 1200V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
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156
-
0
IXYS
WG10008S18
Gate Turn-Off SCR, 1160A I(T)RMS, 1300V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
IXYS
WG10008S18
Gate Turn-Off SCR, 1160A I(T)RMS, 1300V V(DRM), 18V V(RRM), 1 Element
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
IXYS
WG10008S20
Gate Turn-Off SCR, 1160A I(T)RMS, 1400V V(DRM), 18V V(RRM), 1 Element
Warning
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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0
IXYS
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