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WFY5N03 [WINSEMI]

30V N?Channel MOSFET; 30V N沟道MOSFET
WFY5N03
元器件型号： WFY5N03
生产厂家： SHENZHEN WINSEMI MICROELECTRONICS CO., LTD    SHENZHEN WINSEMI MICROELECTRONICS CO., LTD
描述和应用：

30V N?Channel MOSFET
30V N沟道MOSFET
PDF文件： 总5页 (文件大小：381K)
下载文档：  下载PDF数据表文档文件
型号参数：WFY5N03参数
 查看货源

WFY5P03

 -30V P?Channel MOSFET

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18 WINSEMI

WFY6N02

 20V N?Channel MOSFET

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20 WINSEMI

WG10008S

 GATE TURN THYRISTORS

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24 ETC

WG10008S

 GATE TURN THYRISTORS

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8 ETC

WG10008S08

 Symmetrical GTO SCR, 1160A I(T)RMS, 800V V(DRM), 18V V(RRM), 1 Element

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1 IXYS

WG10008S10

 Gate Turn-Off SCR, 1160A I(T)RMS, 900V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S12

 Gate Turn-Off SCR, 1160A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S12

 Gate Turn-Off SCR, 1160A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S14

 Gate Turn-Off SCR, 1160A I(T)RMS, 1100V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S16

 Gate Turn-Off SCR, 1160A I(T)RMS, 1200V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S18

 Gate Turn-Off SCR, 1160A I(T)RMS, 1300V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S18

 Gate Turn-Off SCR, 1160A I(T)RMS, 1300V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S20

 Gate Turn-Off SCR, 1160A I(T)RMS, 1400V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S24

 Gate Turn-Off SCR, 1160A I(T)RMS, 1700V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S24

 Gate Turn-Off SCR, 1160A I(T)RMS, 1700V V(DRM), 18V V(RRM), 1 Element

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0 IXYS
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