WFY5P03 [WINSEMI]

-30V P?Channel MOSFET; -30V P沟道MOSFET
WFY5P03
型号: WFY5P03
厂家: SHENZHEN WINSEMI MICROELECTRONICS CO., LTD    SHENZHEN WINSEMI MICROELECTRONICS CO., LTD
描述:

-30V P?Channel MOSFET
-30V P沟道MOSFET

文件: 总5页 (文件大小:318K)
下载:  下载PDF数据表文档文件

WFY6N02

20V N?Channel MOSFET

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20 WINSEMI

WG10008S

GATE TURN THYRISTORS

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24 ETC

WG10008S

GATE TURN THYRISTORS

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8 ETC

WG10008S08

Symmetrical GTO SCR, 1160A I(T)RMS, 800V V(DRM), 18V V(RRM), 1 Element

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1 IXYS

WG10008S10

Gate Turn-Off SCR, 1160A I(T)RMS, 900V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S12

Gate Turn-Off SCR, 1160A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S12

Gate Turn-Off SCR, 1160A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S14

Gate Turn-Off SCR, 1160A I(T)RMS, 1100V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S16

Gate Turn-Off SCR, 1160A I(T)RMS, 1200V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S18

Gate Turn-Off SCR, 1160A I(T)RMS, 1300V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S18

Gate Turn-Off SCR, 1160A I(T)RMS, 1300V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S20

Gate Turn-Off SCR, 1160A I(T)RMS, 1400V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S24

Gate Turn-Off SCR, 1160A I(T)RMS, 1700V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S24

Gate Turn-Off SCR, 1160A I(T)RMS, 1700V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10020F01

Gate Turn-Off SCR, 2000V V(DRM), 100V V(RRM), 1 Element

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0 IXYS