关闭背景特效

WFY6N02 [WINSEMI]

20V N?Channel MOSFET; 20V N沟道MOSFET

WFY6N02


元器件型号：	WFY6N02
生产厂家：	SHENZHEN WINSEMI MICROELECTRONICS CO., LTD
描述和应用：	20V N?Channel MOSFET 20V N沟道MOSFET
PDF文件：	总6页 (文件大小：387K)
下载文档：	下载PDF数据表文档文件
型号参数：WFY6N02参数

WG10008S

GATE TURN THYRISTORS

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24 ETC

WG10008S

GATE TURN THYRISTORS

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8 ETC

WG10008S08

Symmetrical GTO SCR, 1160A I(T)RMS, 800V V(DRM), 18V V(RRM), 1 Element

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1 IXYS

WG10008S10

Gate Turn-Off SCR, 1160A I(T)RMS, 900V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S12

Gate Turn-Off SCR, 1160A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S12

Gate Turn-Off SCR, 1160A I(T)RMS, 1000V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S14

Gate Turn-Off SCR, 1160A I(T)RMS, 1100V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S16

Gate Turn-Off SCR, 1160A I(T)RMS, 1200V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S18

Gate Turn-Off SCR, 1160A I(T)RMS, 1300V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S18

Gate Turn-Off SCR, 1160A I(T)RMS, 1300V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S20

Gate Turn-Off SCR, 1160A I(T)RMS, 1400V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S24

Gate Turn-Off SCR, 1160A I(T)RMS, 1700V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10008S24

Gate Turn-Off SCR, 1160A I(T)RMS, 1700V V(DRM), 18V V(RRM), 1 Element

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0 IXYS

WG10020F01

Gate Turn-Off SCR, 2000V V(DRM), 100V V(RRM), 1 Element

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0 IXYS

WG10020FR03

Gate Turn-Off SCR, 2000V V(DRM), 300V V(RRM), 1 Element

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0 IXYS

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