AH1-PCB [WJCI]
High Dynamic Range Amplifier; 高动态范围扩增fi er
| 型号： | AH1-PCB |
| 厂家： | 
WJ COMMUNICATION. INC. |
| 描述： | High Dynamic Range Amplifier |
| 文件： | 总5页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AH1
High Dynamic Range Amplifier
Product Features
Product Description
Functional Diagram
GND
The AH1 is a high dynamic range amplifier in a low-cost
surface-mount package. The combination of low noise
figure and high output IP3 at the same bias point makes it
ideal for receiver and transmitter applications. The device
combines dependable performance with superb quality to
maintain MTTF values exceeding 100 years at mounting
temperatures of +85 qC. The AH1 is available in the
environmentally-friendly lead-free/green/RoHS-compliant
SOT-89 package.
xꢀ 250 – 4000 MHz
xꢀ +41 dBm OIP3
xꢀ 3 dB Noise Figure
xꢀ 13.5 dB Gain
4
xꢀ +22 dBm P1dB
1
xꢀ Lead-free/Green/RoHS-compliant
SOT-89 Package
2
3
RF IN
GND
RF OUT
xꢀ Single +5 V Supply
xꢀ MTTF > 100 years
The broadband amplifier uses a high reliability GaAs
MMIC technology and is targeted for applications where
high linearity is required. It is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA. In addition, the
AH1 will work for other applications within the 250 to
4000 MHz frequency range such as fixed wireless, W-
LAN, and WiBro.
Function
Pin No.
Input
1
3
Output/Bias
Ground
2, 4
Applications
xꢀ Mobile Infrastructure
xꢀ CATV / DBS
xꢀ W-LAN / Wi-Bro / WiMAX
xꢀ RFID
xꢀ Defense / Homeland Security
xꢀ Fixed Wireless
Specifications (1)
Typical Performance (4)
Parameter
Operational Bandwidth
Test Frequency
Gain
Units Min Typ Max
Parameter
Frequency
Units
MHz
dB
Typical
MHz
MHz
dB
250
4000
900
14.2
-21
1900
12.2
-14
2140
S21
12.0
-21
800
13.5
8
S11
dB
12.4
S22
dB
-14
-13
-11
Input Return Loss
Output Return Loss
Output P1dB
dB
Output P1dB
Output IP3 (2)
IS-95 Channel Power (5)
Noise Figure
Supply Voltage
Device Current
dBm
dBm
dB
+21.7
+42
+22
+41
+16.5
3.3
+22
+40
dB
15
dBm
dBm
dB
+21.7
+41
3.0
150
5
Output IP3 (2)
+37
120
+15.5
3.2
Noise Figure (3)
Operating Current Range
Supply Voltage
dB
3.3
V
5
mA
V
180
mA
150
4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3.
5. Measured with -45 dBc ACPR, IS-95 9 channels fwd.
1. Test conditions unless otherwise noted: T = 25 ºC, 50 system.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Noise figure can be optimized by matching the input for optimal return loss.
Absolute Maximum Rating
Parameter
Rating
-40 to +85 qC
-55 to +150 qC
+6 V
+10 dBm
+220 qC
Ordering Information
Operating Case Temperature
Storage Temperature
Supply Voltage
RF Input Power (continuous)
Junction Temperature
Part No.
AH1-G
Description
High Dynamic Range Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
AH1-PCB
0.8 – 2.5 GHz Fully Assembled Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 5 April 2007
AH1
High Dynamic Range Amplifier
Typical Device Data
S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25 C, unmatched device in a 50 ohm system)
Input return loss can be improved with the appropriate input matching network shown later in this datasheet.
Gain vs. Output Power
Output IP3 vs. Output Power
OIP3LoadPull Circles
14
13
12
11
10
9
45
40
35
30
25
20
900 MHz
900MHz
IP3=35
IP3=36
IP3=37
100% Idss
75% Idss
50% Idss
100% Idss
IP3=38
IP3=39
75% Idss
50% Idss
IP3=41
0
5
10
15
20
0
5
10
Output Power (dBm)
15
20
VSWR=1.5
VSWR=2
Output Power (dBm)
VSWR=3
Gain vs. Frequency
Return Loss vs. Frequency
VSWR=4
VSWR=5
20
15
10
5
0
w/o Matching Circuitry
-5
-10
-15
-20
-25
-30
S11
S22
0
0
500
1000 1500 2000 2500 3000
0
500
1000 1500 2000 2500 3000
Frequency (MHz)
Frequency (MHz)
S-Parameters (VD = +5 V, ID = 150 mA, T = 25 C, calibrated to device leads)
Freq (MHz)
50
S11 (dB)
-2.65
-7.97
-8.57
-8.47
-8.24
-7.79
-7.18
-6.55
-6.03
-5.69
-5.55
-5.68
-5.86
S11 (ang)
-29.52
S21 (dB)
17.80
15.28
14.91
14.60
14.22
13.80
13.27
12.69
12.11
11.57
11.12
10.76
10.40
S21 (ang)
164.25
158.50
147.54
134.66
121.38
108.59
96.13
S12 (dB)
-24.29
-21.31
-21.11
-21.11
-21.21
-21.21
-21.41
-21.62
-21.83
-21.99
-22.10
-22.16
-22.27
S12 (ang)
45.18
S22 (dB)
-8.25
S22 (ang)
-39.80
-65.37
-69.25
-84.69
-115.12
-88.78
-94.19
-136.07
-112.00
-97.44
-90.19
-87.80
-82.67
250
-44.15
6.75
-19.01
-25.15
-29.26
-30.76
-29.83
-29.30
-29.12
-28.24
-26.58
-25.60
-26.12
-29.48
500
-60.61
-3.83
750
-80.72
-10.90
-17.00
-23.01
-28.54
-33.67
-38.35
-42.48
-46.41
-50.57
-55.21
1000
1250
1500
1750
2000
2250
2500
2750
3000
-100.99
-120.81
-138.15
-152.70
-164.30
-173.54
176.22
166.67
153.06
84.26
73.25
62.88
52.70
42.57
31.81
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice.
Web site: www.wj.com Page 2 of 5 April 2007
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
AH1
High Dynamic Range Amplifier
Application Circuit: 800 – 2500 MHz (AH1-PCB)
Vcc = +5 V
ID=C5
C=56 pF
Typical RF Performance at 25 qC
Frequency MHz 900 1900 2140
All passive components are of size 0603 unless otherwise noted.
Component C1 is shown in the silkscreen but is not used for this
configuration.
S21 – Gain
dB
dB
14.2 12.2 12.0
ID=C4
L=12 nH
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
-21
-14
-14
-13
-21
-11
Z0=22 Ohm
EL=15.2 Deg
F0=0.9 GHz
ID=Q1
NET="AH1"
ID=C2
C=56 pF
dB
dBm
+21.7 +22 +22
Output IP3
(+5 dBm / tone, 10 MHz spacing)
ID=C6
C=56 pF
dBm
+42
+41 +40
IS-95 Channel Power
(@-45 dBc ACPR, 9 channels fwd)
dBm
dB
+15.5 +16.5
3.2 3.3
+5V @ 150mA
ID=C3
L=5.6 nH
Noise Figure
Device Bias
3.3
Circuit Board Material: .062” total thickness with a .014” FR-4 top RF layer, 4 layers (other
layers added for rigidity), 1 oz copper, 50 Microstrip line details: width = .025”.
Gain
Return Loss
Gain and Output IP3 vs. Temperature
Frequency = 800, 801 MHz @ Pout =5dBm
15
14
13
12
11
10
0
15
14
13
12
11
10
45
44
43
42
41
40
-5
-10
-15
-20
-25
-30
Gain
OIP3
S11
S22
750
1000 1250 1500 1750 2000 2250
750
1000 1250 1500 1750 2000 2250
-40
-15
10
35
60
85
Temperature (oC)
Frequency (MHz)
Frequency (MHz)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 900 MHz
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1900 MHz
P1dB and Noise Figure vs. Temperature
Frequency = 800 MHz
-40
-40
-50
-60
-70
23
4
3
2
1
0
22
21
20
19
-50
-60
-70
P1dB
NF
10
11
12
13
14
15
16
17
10
11
12
13
14
15
16
17
-40
-15
10
35
60
85
Temperature (oC)
Output Channel Power (dBm)
Output Channel Power (dBm)
Specifications and information are subject to change without notice.
Web site: www.wj.com Page 3 of 5 April 2007
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
AH1
High Dynamic Range Amplifier
250 - 650 MHz Reference Design
Gain / Return Loss
16
15
14
13
12
11
0
Freq. MHz 250
450 650
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
+5V
dB
dB
14.8 14.5 13.8
Gain
S11
C=1000 pF
-5
-10
-19
-36
-17
+22
+42
2.8
-11
-13
-10
-15
-20
-25
dB
S22
dBm
dBm
dB
L=82 nH
P1dB
OIP3
NF
NET="AH1"
C=1000 pF
L=15 nH
2.8
3.2
Bias
+5V @ 150mA
0.2
0.3
0.4
0.5
0.6
0.7
Frequency (GHz)
900 MHz Reference Design
+5 V
C=100 pF
Freq. MHz 800
900 1000
Gain / Return Loss
15
14
13
12
11
10
0
dB
dB
Gain
S11
13.7 13.7 13.6
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
L=100 nH
-13
-13
-16
-14
+22
+41
2.5
-18
-15
-5
dB
S22
NET="AH1"
-10
-15
-20
-25
C=100 pF
C=100 pF
dBm
dBm
dB
P1dB
OIP3
NF
L=12 nH
Bias
+5V @ 150mA
0.7
0.8
0.9
1
1.1
Frequency (GHz)
2350 MHz Reference Design
Gain / Return Loss
+5V
13
0
C=56 pF
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
Freq. GHz 2.3
2.35 2.4
12
11
10
9
-5
dB
dB
12.0 12.0 11.9
Gain
S11
TLINP
Z0=50 Ohm
L=250 mil
Eeff=3.4
L=22 nH
-24
-12
-40
-13
+22
+41
3.7
-25
-14
-10
-15
-20
-25
Loss=0
F0=0 GHz
NET="AH1"
C=56 pF
dB
S22
dBm
dBm
dB
P1dB
OIP3
NF
C=1.2 pF
8
Bias
+5V @ 150mA
2.1
2.2
2.3
2.4
2.5
2.6
Frequency (GHz)
3500 MHz Reference Design
Gain / Return Loss
+5V
11
0
Freq. GHz 3.3
3.5
9.9
3.8
9.5
-14
-16
C=18 pF
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
DB(|S(2,1)|) (L)
dB
dB
Gain
S11
9.8
-10
-16
10
9
-5
-18
TLINP
Z0=80 Ohm
L=50 mil
Eeff=3.4
Loss=0
L=12 nH
-10
-15
-20
-25
dB
S22
-17
NET="AH1"
C=18 pF
dBm
dBm
dB
P1dB
OIP3
NF
+21.6
+41
4.3
F0=0 GHz
8
4.8
4.1
7
C=1 pF
Bias
+5V @ 150mA
6
3
3.2
3.4
3.6
3.8
4
Frequency (GHz)
Specifications and information are subject to change without notice.
Web site: www.wj.com Page 4 of 5 April 2007
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
AH1
High Dynamic Range Amplifier
AH1-G (Green / Lead-free SOT-89 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded
(maximum 245 qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The AH1-G will be marked with an “AH1G”
An alphanumeric lot code
designator.
(“XXXX-X”) is also marked below the part
designator on the top surface of the package.
The obsolete tin-lead package is marked with
an “AH1” designator followed by an
alphanumeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
Land Pattern
ESD Rating: Class 1B
Value:
Test:
Standard:
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value:
Test:
Standard:
Passes 1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of
this device. Vias should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board
to a heatsink. Ensure that the ground / thermal via region
contacts the heatsink.
MTTF vs. GND Tab Temperature
Thermal Specifications
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
1000
100
10
Parameter
Rating
-40 to +85 qC
59 qC / W
129 qC
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tj (2)
7. All dimensions are in millimeters (inches). Angles are in
degrees.
1. The thermal resistance is referenced from the hottest
part of the junction to the ground tab (pin 4).
2. This corresponds to the typical biasing condition of
1
+5V, 150 mA at an 85 C case temperature.
A
60
70
80
90
100
110
minimum MTTF of 1 million hours is achieved for
junction temperatures below 160 C.
Tab Temperature (°C)
Specifications and information are subject to change without notice.
Web site: www.wj.com Page 5 of 5 April 2007
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
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