1N4006G-TB
更新时间：2024-09-18 18:24:56
品牌：WTE
描述：Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
概述
数据手册1N4006G-TB 概述
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2
1N4006G-TB 数据手册
通过下载1N4006G-TB数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载WTE
POWER SEMICONDUCTORS
1N4001G – 1N4007G
1.0A GLASS PASSIVATED RECTIFIER
Features
!
Glass Passivated Die Construction
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
!
!
Case: Molded Plastic
D
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.35 grams (approx.)
Mounting Position: Any
DO-41
Dim
A
Min
25.4
4.06
0.71
2.00
Max
—
!
!
!
!
B
5.21
0.864
2.72
C
Marking: Type Number
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N
1N
1N
1N
1N
1N
1N
Characteristic
Symbol
Unit
4001G 4002G 4003G 4004G 4005G 4006G 4007G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
1.0
V
A
Average Rectified Output Current
(Note 1)
@TA = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
IRM
1.0
V
µA
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 100°C
@TA = 25°C
5.0
50
Typical Junction Capacitance (Note 2)
Cj
8.0
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RꢀJA
100
K/W
Operating Temperature Range
Storage Temperature Range
Tj
-65 to +175
-65 to +175
°C
°C
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N4001G – 1N4007G
1 of 3
© 2002 Won-Top Electronics
1.0
0.8
10
1.0
0.6
0.4
0.2
0
0.1
Tj = 25ºC
PULSE WIDTH = 300µs
2% DUTY CYCLE
0.01
0.6
0.8
1.0
1.2
1.4
1.6
40
60
80
100 120 140 160 180
TA, AMBIENT TEMPERATURE (ºC)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
Fig. 1 Forward Current Derating Curve
50
40
30
100
Tj = 25ºC
f = 1MHz
10
20
10
0
8.3ms Single half sine-wave
JEDEC Method
1.0
1.0
10
100
1.0
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Fig. 4 Typical Junction Capacitance
1N4001G – 1N4007G
2 of 3
© 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.!
Package Type
Shipping Quantity
1N4001G-T3
1N4001G-TB
1N4001G
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
DO-41
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
5000/Tape & Reel
5000/Tape & Box
1000 Units/Box
1N4002G-T3
1N4002G-TB
1N4002G
1N4003G-T3
1N4003G-TB
1N4003G
1N4004G-T3
1N4004G-TB
1N4004G
1N4005G-T3
1N4005G-TB
1N4005G
1N4006G-T3
1N4006G-TB
1N4006G
1N4007G-T3
1N4007G-TB
1N4007G
Products listed in
are WTE
devices.
Preferred
bold
!T3 suffix refers to a 13” reel. TB suffix refers to Ammo Pack.
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any
responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to
manufacturer. WTE reserves the right to change any or all information herein without further notice.
: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
WARNING
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: 886-7-822-5408 or 886-7-822-5410
Fax: 886-7-822-5417
Email: sales@wontop.com
Internet: http://www.wontop.com
Wepoweryoureveryday.
1N4001G – 1N4007G
3 of 3
© 2002 Won-Top Electronics
1N4006G-TB 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N4006G-TB-LF | WTE | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2 | 获取价格 |
|
| 1N4006GH01 | RECTRON | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, | 获取价格 |
|
| 1N4006GH02-2 | RECTRON | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, | 获取价格 |
|
| 1N4006GH02-3 | RECTRON | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, | 获取价格 |
|
| 1N4006GH02-5 | RECTRON | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, | 获取价格 |
|
| 1N4006GH03-1 | RECTRON | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, | 获取价格 |
|
| 1N4006GH03-2 | RECTRON | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, | 获取价格 |
|
| 1N4006GH03-4 | RECTRON | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, | 获取价格 |
|
| 1N4006GH04 | RECTRON | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, | 获取价格 |
|
| 1N4006GH05 | RECTRON | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, | 获取价格 |
|
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