BAV21WS [WTE]

Silicon Epitaxial Planar Diode; 硅外延平面二极管
BAV21WS
型号: BAV21WS
厂家: WON-TOP ELECTRONICS    WON-TOP ELECTRONICS
描述:

Silicon Epitaxial Planar Diode
硅外延平面二极管

二极管
文件: 总3页 (文件大小:232K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS  
FEATURES  
Pb  
Lead-free  
z
Fast Switching Speed.  
z
Surface Mount Package Ideally Suited For  
Automatic Insertion  
z
z
For General Purpose Switching Applications  
High Conductance  
APPLICATIONS  
SOD-323  
z
Surface mount fast switching diode  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
BAV19WS  
BAV20WS  
BAV21WS  
A8  
T2  
T3  
SOD-323  
SOD-323  
SOD-323  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Characteristic  
Symbol BAV19WS BAV20WS BAV21WS Unit  
Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Reverse Voltage  
VRRM  
VRWM  
VR  
120  
200  
150  
106  
250  
200  
141  
V
100  
V
RMS Reverse Voltage  
VR(RMS)  
IFM  
71  
V
Forward Continuous Current  
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
400  
200  
mA  
mA  
Io  
@t=1.0 μs IFSM  
@t=1.0 s  
Repetitive Peak Forward Surge Current  
2.5  
0.5  
IFRM  
625  
mA  
mW  
/W  
Power Dissipation  
Pd  
200  
Thermal Resistance Junction to Ambient Air  
Operating and Storage Temperature Rage  
RθJA  
Tj,TSTG  
625  
-65 to+150  
Document number: BL/SSSDB018  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Characteristic  
Symbol  
Min  
Max  
1.0  
1.25  
0.1  
0.1  
0.1  
5
Unit  
Test Condition  
IF=100mA  
Forward Voltage  
VFM  
-
V
IF=200mA  
Reverse Current BAV19WS IR  
BAV20WS  
-
μA  
VR=100V  
VR=150V  
BAV21WS  
VR=200V  
Capacitance between  
terminals  
CT  
trr  
-
-
pF  
ns  
VR=0,f=1.0MHz  
Reverse Recovery Time  
50  
IF=IR=30mA,  
Irr=0.1×IR,RL=100Ω  
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Document number: BL/SSSDB018  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOD-323  
SOD-323  
Min  
K
B
Dim  
A
B
Max  
1.325  
1.725  
C
1.275  
1.675  
A
H
D
C
0.9 Typical  
D
E
0.25  
0.27  
0.02  
0.35  
0.37  
0.1  
H
J
J
E
0.1 Typical  
K
2.6  
All Dimensions in mm  
2.7  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
Shipping  
BAV19WS/20WS/21WS SOD-323  
3000/Tape&Reel  
Document number: BL/SSSDB018  
Rev.A  
www.galaxycn.com  
3

相关型号:

BAV21WS-13

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-2
DIODES

BAV21WS-7

SURFACE MOUNT FAST SWITCHING DIODE
DIODES

BAV21WS-7-F

SURFACE MOUNT FAST SWITCHING DIODE
WTE

BAV21WS-7-F

SURFACE MOUNT FAST SWITCHING DIODE
DIODES

BAV21WS-AU

SURFACE MOUNT SWITCHING DIODES
PANJIT

BAV21WS-E3-08

DIODE GEN PURP 200V 250MA SOD323
VISHAY

BAV21WS-E3-18

DIODE GEN PURP 200V 250MA SOD323
VISHAY

BAV21WS-G

Small Signal Switching Diodes, High Voltage
VISHAY

BAV21WS-G3-08

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, GREEN PACKAGE-2
VISHAY

BAV21WS-G3-18

DIODE GEN PURP 200V 250MA SOD323
VISHAY

BAV21WS-GS08

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-2
VISHAY

BAV21WS-GS18

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM),
VISHAY