KBP201 [WTE]

2.0A BRIDGE RECTIFIER; 2.0A桥式整流器


型号：	KBP201
厂家：	WON-TOP ELECTRONICS
描述：	2.0A BRIDGE RECTIFIER 2.0A桥式整流器二极管
文件：	总3页 (文件大小：39K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

WTE

PO WER SEMICONDUCTORS

KBP200 – KBP2010

2.0A BRIDGE RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

UL Recognized File # E157705

KBP

Dim

Min

14.22

10.67

15.2

4.57

3.60

2.16

0.76

1.52

11.68

12.7

Max

15.24

11.68

—

5.08

4.10

2.67

0.86

—

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 1.7 grams (approx.)

Mounting Position: Any

12.7

—

3.2 x 45° Typical

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBP

200

KBP

201

KBP

202

KBP

204

KBP

206

KBP

208

KBP

2010

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

2.0

Average Rectified Output Current

(Note 1)

@T_A= 50°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage (per element)

@I_F= 2.0A

V^FM

I^RM

1.1

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

500

µA

Rating for Fusing (t<8.3ms)

I²^t

C^j

A²s

Typical Junction Capacitance per element (Note 2)

Typical Thermal Resistance (Note 3)

R^ꢀ^JA

T^j,T^STG

K/W

°C

Operating and Storage Temperature Range

-55 to +165

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance junction to ambient mounted on PC board with 12mm²copper pad.

KBP200 – KBP2010

1 of 3

2.0

1.5

T_J

= 150°C

T_J

= 25°C

1.0

0.5

0.1

Pulse Width

300 µs

0.2

0.4

0.6

0.8

1.0

1.2

1.4

150

225

V_F, INSTANTANEOUS FWD VOLTAGE (V)

Fig. 2 Typical Fwd Characteristics

T, TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

100

T_j= 25°C

f = 1MHz

T_j= 150°c

Single Half

Sine Wave

(JEDEC Method)

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60 Hz

Fig. 4 Typical Junction Capacitance

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

10,000

1000

T_j= 150°C

T_j= 100°C

100

T_j= 125°C

1.0

T_j= 25°C

0.1

0.01

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

KBP200 – KBP2010

2 of 3

ORDERING INFORMATION

Product No.

KBP200

Package Type

Shipping Quantity

SIL Bridge

1000 Units/Box

KBP201

KBP202

KBP204

KBP206

KBP208

KBP2010

Shipping quantity given is for minimum packing quantity only. For minimum order

quantity, please consult the Sales Department.

Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any

responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to

manufacturer. WTE reserves the right to change any or all information herein without further notice.

: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life

WARNING

support devices or systems without the express written approval.

Won-Top Electronics Co., Ltd.

No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan

Phone: 886-7-822-5408 or 886-7-822-5410

Fax: 886-7-822-5417

Email: sales@wontop.com

Internet: http://www.wontop.com

Wepoweryoureveryday.

KBP200 – KBP2010

3 of 3

KBP201 [WTE]

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